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  fet2-16 Datasheet PDF File

For fet2-16 Found Datasheets File :: 135    Search Time::1.781ms    
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    FW216

Sanyo Semicon Device
Part No. FW216
OCR Text ... 1unit p d (fet1) -- p d (fet2) total dissipation mounted on a ceramic board (2000mm 2 5 0.8mm), pw 10s ambient temperature, ta -- c allowable power dissipation, p d -- w mounted on a ceramic board (2000mm 2 5 0.8mm), ...
Description N-Channel Silicon MOSFET General-Purpose Switching Device

File Size 33.95K  /  4 Page

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    FW231A FW231A-TL-E

Sanyo Semicon Device
Part No. FW231A FW231A-TL-E
OCR Text ... 1unit p d (fet1) -- p d (fet2) total dissipation mounted on a ceramic board (1500mm 2 5 0.8mm), pw 10s ambient temperature, ta -- c allowable power dissipation, p d -- w allowable power dissipation (fet1), p d -- w a...
Description N-Channel Silicon MOSFET General-Purpose Switching Device
General-Purpose Switching Device Applications

File Size 36.91K  /  4 Page

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    TBB100211

Renesas Electronics Corporation
Part No. TBB100211
OCR Text ...on are applicable for vhf unit (fet2) (ta = 25 c) item symbol min typ max unit test conditions drain to source breakdown voltage v (br)...16/f., tower 2, grand century place, 193 prince edward road west, mongkok, kowloon, hong kong tel: +...
Description Twin Built in Biasing Circuit MOS FET IC VHF/UHF RF Amplifier

File Size 114.28K  /  9 Page

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    FW211

Sanyo Semicon Device
Part No. FW211
OCR Text ...Allowable Power Disipation, PD (FET2) - W 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0 0.2 P D (FET2) - P D (FET1) Allowable Power Disipation, PD - W PD - Ta M ou 2.0 1.7 nte d ce ram ic bo 1.5 ...
Description    DC-DC Converter Applications
N-Channel Silicon MOSFET DC-DC Converter Applications

File Size 43.25K  /  3 Page

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    UPA1871 UPA1871GR-9JG

NEC[NEC]
NEC Corp.
Part No. UPA1871 UPA1871GR-9JG
OCR Text ....1 Single Pulse PD (FET1) : PD (FET2) = 1 : 1 0 0 30 60 120 90 TA - Ambient Temperature - C 150 0.01 0.1 1.0 10.0 100.0 VDS - Drain to Source Voltage - V DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE 25 FORWARD TR...
Description N-channel enhancement type MOS FET
N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING

File Size 63.77K  /  8 Page

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    FTD1003

Sanyo Semicon Device
Part No. FTD1003
OCR Text ... -- Ta 1.0 PD(FET1) -- PD(FET2) M ou Allowable Power Dissipation, PD - W 1.0 0.8 nte do 0.8 To na tal ce Di 0.6 ram 0.6 1u ss ic ip bo nit ati ard on (1 0.4 ...
Description Pch Pch
Load Switching Applications

File Size 34.02K  /  4 Page

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    FW213

Sanyo Semicon Device
Part No. FW213
OCR Text ...llowable Power Dissipation, PD (FET2) - W 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 Drain-to-Source Voltage, VDS - V 2.5 P D (FET2) - P D (FET1) M ou P D - Ta nte Allowable Power D...
Description    DC-DC Converter Applications

File Size 43.89K  /  4 Page

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    UPA1855 UPA1855GR-9JG

NEC
Part No. UPA1855 UPA1855GR-9JG
OCR Text ...d of 50cm x 1.1mm PD(FET1) : PD(FET2) = 1:1 1 10 100 VDS - Drain to Source Voltage - V DRAIN CURRENT vs. DRAIN TO SOURCE VOLT...16 V 10 V 3 2 1 0 0 1 2 3 4 5 6 7 8 9 10 QG - Gate Charge ...
Description Nch enhancement type MOS FET
MOS FIELD EFFECT TRANSISTOR

File Size 65.94K  /  8 Page

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    UPA1951 UPA1951TE UPA1951TE-T2

NEC Corp.
Part No. UPA1951 UPA1951TE UPA1951TE-T2
OCR Text ...e - C/W 1000 PD (FET1) : PD (FET2) = 1: 0 100 PD (FET1) : PD (FET2) = 1: 1 10 Single pulse Mounted on FR-4 board of 5000 mm 2 x 1.1 mm 1m 10 m 100 m 1 10 100 1000 PW - Pulse Width - s 1 Data Sheet G15613EJ1V0DS 3 PA19...
Description P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
Pch enhancement type MOS FET

File Size 72.14K  /  8 Page

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