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  f-mos Datasheet PDF File

For f-mos Found Datasheets File :: 21370    Search Time::2.578ms    
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    Advanced Power Technology Ltd.
ADPOW[Advanced Power Technology]
Part No. APT20M26WVR
OCR Text ...r.com Bend, Oregon 97702 -1035 F-33700 Merignac - France Phone: (541) 382-8028 Phone: (33) 5 57 92 15 15 CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. USA 405 S.W. Co...
Description Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
POWER MOS V 200V 65A 0.026 Ohm

File Size 62.86K  /  4 Page

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    ADPOW[Advanced Power Technology]
Part No. APT20M40BVR
OCR Text ...er.com Bend, Oregon 97702-1035 F-33700 Merignac - France Phone: (541) 382-8028 Phone: (33) 5 57 92 15 15 CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. USA 405 S.W. Co...
Description POWER MOS V 200V 59A 0.040 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

File Size 92.16K  /  4 Page

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    Cypress Semiconductor, Corp.
Part No. NP110N03PUG-AZ
OCR Text ...he np110n03pug is n-channel mos f i eld effect t r ansistor designed for high current sw itching applications. features ? channel temperature 175 degree rating ? super low on-state resistance r d s ( on) = 1.7 m ? max ...
Description 110 A, 30 V, 0.0017 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB TO-263, 3 PIN

File Size 61.05K  /  4 Page

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    MICROSEMI POWER PRODUCTS GROUP
ADPOW[Advanced Power Technology]
Part No. APT20M45BVFR
OCR Text ...er.com Bend, Oregon 97702-1035 F-33700 Merignac - France Phone: (541) 382-8028 Phone: (33) 5 57 92 15 15 CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. USA 405 S.W. Co...
Description 56 A, 200 V, 0.045 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247
Power MOS V is a new generation of high voltage N-Channel enhancement
POWER MOS V 200V 56A 0.045 Ohm

File Size 94.71K  /  4 Page

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    ADPOW[Advanced Power Technology]
Part No. APT20M45BVR
OCR Text ...er.com Bend, Oregon 97702-1035 F-33700 Merignac - France Phone: (541) 382-8028 Phone: (33) 5 57 92 15 15 CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. USA 405 S.W. Co...
Description POWER MOS V 200V 56A 0.045 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

File Size 92.17K  /  4 Page

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    ADPOW[Advanced Power Technology]
Part No. APT20M45SVFR
OCR Text ...er.com Bend, Oregon 97702-1035 F-33700 Merignac - France Phone: (541) 382-8028 Phone: (33) 5 57 92 15 15 CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. USA 405 S.W. Co...
Description POWER MOS V 200V 56A 0.045 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

File Size 97.57K  /  4 Page

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    ADPOW[Advanced Power Technology]
Part No. APT20M45SVR
OCR Text ...er.com Bend, Oregon 97702-1035 F-33700 Merignac - France Phone: (541) 382-8028 Phone: (33) 5 57 92 15 15 CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. USA 405 S.W. Co...
Description POWER MOS V 200V 56A 0.045 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

File Size 94.99K  /  4 Page

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    Advanced Power Technology Ltd.
ADPOW[Advanced Power Technology]
Part No. APT30M19JVR
OCR Text ...er.com Bend, Oregon 97702-1035 F-33700 Merignac - France Phone: (541) 382-8028 Phone: (33) 5 57 92 15 15 CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. USA 405 S.W. Co...
Description Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
POWER MOS V 300V 130A 0.019 Ohm

File Size 74.50K  /  4 Page

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    RD60HUF1

Mitsubishi Electric Sem...
Mitsubishi Electric Semiconductor
Part No. RD60HUF1
OCR Text ...: Pout>60W, Gp>7.7dB @Vdd=12.5V,f=520MHz *High Efficiency: 55%typ.on UHF Band 2 3 10.0+/-0.3 FEATURES R1.6+/-0.15 0.1 -0.01 ...MOS FET ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD60HUF1 Vgs-Ids CHARACTER...
Description MITSUBISHI RF POWER MOS FET

File Size 313.49K  /  7 Page

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