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74LVC1G0 MF614A CY7C42 MAFRIN FCH10A15 087381 IRU3027 DTC113ZM
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For dose Found Datasheets File :: 2784    Search Time::1.563ms    
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    IRH8250 IRH7250

IRF[International Rectifier]
Part No. IRH8250 IRH7250
OCR Text ...s up to 1 x 105 Rads (Si) total dose. No compensation in gate drive circuitry is required. These devices are also capable of surviving transient ionization pulses as high as 1 x 1012 Rads (Si)/Sec, and return to normal operation within a fe...
Description REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTOR

File Size 313.63K  /  12 Page

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    IRHM8250 IRHM7250 JANSR2N7269 IRHM3250 IRHM4250 JANSF2N7269 JANSG2N7269

IRF[International Rectifier]
Part No. IRHM8250 IRHM7250 JANSR2N7269 IRHM3250 IRHM4250 JANSF2N7269 JANSG2N7269
OCR Text ...en characterized for both Total dose and Single Event Effects (SEE). The combination of low Rdson and low gate charge reduces the power losses in switching applications such as DC to DC converters and motor control. These devices retain all...
Description 200V 600kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a TO-254AA package
200V 300kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a TO-254AA package
200V 100kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a TO-254AA package
200V 1000kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a TO-254AA package
RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-254AA)

File Size 266.93K  /  12 Page

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    IRHM9230

IRF[International Rectifier]
Part No. IRHM9230
OCR Text ...s up to 1 x 105 Rads (Si) total dose. No compensation in gate drive circuitry is required. These devices are also capable of surviving transient ionization pulses as high as 1 x 1012 Rads (Si)/Sec, and return to normal operation within a fe...
Description TRANSISTOR P-CHANNEL(BVdss=-200V, Rds(on)=0.8ohm, Id=-6.5A)

File Size 145.28K  /  4 Page

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    IRHN8250 IRHN7250

IRF[International Rectifier]
Part No. IRHN8250 IRHN7250
OCR Text ...s up to 1 x 105 Rads (Si) total dose. At 1 x 106 Rads (Si) total dose, under the same pre-dose conditions, only minor shifts in the electrical specifications are observed and are so specified in table 1. No compensation in gate drive circui...
Description TRANSISTOR N-CHANNEL(BVdss=200V Rds(on)=0.10ohm Id=26A)
TRANSISTOR N-CHANNEL(BVdss=200V, Rds(on)=0.10ohm, Id=26A)

File Size 523.50K  /  14 Page

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    RH1078M

LINER[Linear Technology]
Part No. RH1078M
OCR Text ... 8-LEAD TO-5 METAL CAN TOTAL dose BIAS CIRCUIT 10k 15V 8V Note: For ordering information contact LTC. + 10k -15V U U W WW U W - + - U UU 1 RH1078M TABLE 1: ELECTRICAL CHARACTERISTICS ...
Description Micropower Dual Single Supply Precision Op Amp
Micropower, Dual, Single Supply Precision Op Amp

File Size 194.00K  /  8 Page

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    5962F9672001VCC 5962F9672001VXC ACTS280K ACTS280HMSR ACTS280D ACTS280MS

INTERSIL[Intersil Corporation]
Part No. 5962F9672001VCC 5962F9672001VXC ACTS280K ACTS280HMSR ACTS280D ACTS280MS
OCR Text ...ation Hardened SOS CMOS * Total dose . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . >300K RAD (Si) * Single Event Upset (SEU) Immunity: <1 x 10-10 Errors/Bit/Day (Typ) * SEU LET Threshold . . . . . . . . . . . . . . . . . ....
Description Radiation Hardened 9-Bit Odd/ Even Parity Generator Checker

File Size 56.56K  /  4 Page

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    Xilinx, Inc.
Part No. XQVR1000
OCR Text ...cess, and have guaranteed total dose, latch up immunity, and low soft upset rates. these products allow for the ultimate in design and mission flexibility in a cost-effective manner. qml certification part of overall quality platform being...
Description QPRO Virtex 2.5V Radiation Hardened FPGAs(QPRO Virtex 2.5V ?茶?灏???哄?缂???ㄩ???

File Size 74.25K  /  8 Page

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For dose Found Datasheets File :: 2784    Search Time::1.563ms    
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