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For currenta Found Datasheets File :: 1736    Search Time::6.75ms    
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    SI2301ADS

Vishay Intertechnology,Inc.
Vishay Siliconix
Part No. SI2301ADS
OCR Text ...nt (TJ = 150_C)b _ Pulsed Drain currenta Continuous Source Current (Diode Conduction)b Power Dissipationb Operating Junction and Storage Temperature Range TA= 25_C TA= 70_C PD TJ, Tstg TA= 25_C TA= 70_C ID IDM IS -0.75 0.9 0.57 -55 to 150 ...
Description P-Channel 2.5-V (G-S) MOSFET

File Size 36.44K  /  4 Page

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    SI4464DY

VISAY[Vishay Siliconix]
Part No. SI4464DY
OCR Text ...ge Drain Current On-State Drain currenta VGS(th) IGSS IDSS ID(on) VDS = VGS, ID = 250 mA VDS = 0 V, VGS = "20 V VDS = 160 V, VGS = 0 V VDS = 160 V, VGS = 0 V, TJ = 55_C VDS w 5 V, VGS = 10 V VGS = 10 V, ID = 2.2 A rDS(on) VGS = 6.0 V, ID = ...
Description N-Channel 200-V (D-S) MOSFET

File Size 42.03K  /  5 Page

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    SI6475DQ

Vishay Intertechnology, Inc.
VISAY[Vishay Siliconix]
Part No. SI6475DQ
OCR Text ...ge Drain Current On-State Drain currenta VGS(th) IGSS IDSS ID(on) VDS = VGS, ID = -5 mA VDS = 0 V, VGS = "8 V VDS = -9.6 V, VGS = 0 V VDS = -9.6 V, VGS = 0 V, TJ = 70_C VDS = -5 V, VGS = -4.5 V VGS = -4.5 V, ID = -10 A Drain-Source On-State...
Description P-Channel 12-V (D-S) MOSFET P沟道12 V的(副)MOSFET

File Size 51.05K  /  4 Page

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    IRF7494

IRF[International Rectifier]
Part No. IRF7494
OCR Text ...lse Avalanche Energyd Avalanche currenta Typ. --- --- Max. 370 3.1 Units mJ A Diode Characteristics Parameter IS ISM VSD trr Qrr ton Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode)A Diode Forward Voltage Rever...
Description 150V Single N-Channel HEXFET Power MOSFET in a SO-8 package 

File Size 559.88K  /  8 Page

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    IRFB16N60L

International Rectifier
ir
Part No. IRFB16N60L
OCR Text ...lse Avalanche Energyd Avalanche currenta Repetitive Avalanche Energy Typ. --- --- --- Max. 310 16 31 Units mJ A mJ Thermal Resistance Symbol RJC RJA Parameter Junction-to-Case Junction-to-Ambient Typ. --- --- Max. 0.4 6...
Description 600V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
TRANSISTOR,MOSFET,N-CHANNEL,

File Size 543.56K  /  9 Page

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    IRFP1405

IRF[International Rectifier]
Part No. IRFP1405
OCR Text ...e Energy Tested Value Avalanche currenta Repetitive Avalanche Energy W W/C V mJ A mJ C h g Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting Torque, 6-32 or M3 screw 300 (1.6mm fr...
Description 55V Single N-Channel HEXFET Power MOSFET in a TO-247AC package
AUTOMOTIVE MOSFET

File Size 193.56K  /  9 Page

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    IRL3713 IRL3713L IRL3713S

IRF[International Rectifier]
Part No. IRL3713 IRL3713L IRL3713S
OCR Text ...lse Avalanche Energyd Avalanche currenta Typ --- --- Max 1530 46 Units mJ A Diode Characteristics Symbol IS ISM VSD trr Qrr trr Qrr Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode)Ah Diode Forward...
Description 30V Single N-Channel HEXFET Power MOSFET in a TO-262 package
SMPS MOSFET

File Size 233.11K  /  11 Page

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    MPC9229

http://
MOTOROLA[Motorola, Inc]
Part No. MPC9229
OCR Text ...Voltage Input Low Voltage Input currenta FOUTb VCC-1.02 VCC-1.95 2.0 0.55 VCC-0.74 VCC-1.60 V V LVPECL LVPECL Voltagec 2.0 VCC + 0.3 0.8 200 V V A LVCMOS LVCMOS VIN = VCC or GND Differential clock output Output High Voltagec Output Lo...
Description 400 MHz Low Voltage PECL Clock Synthesizer

File Size 363.75K  /  12 Page

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    SI5406DC-T SI5406DC SI5406DC-T1

VISAY[Vishay Siliconix]
Vishay Intertechnology,Inc.
Part No. SI5406DC-T SI5406DC SI5406DC-T1
OCR Text ...ge Drain Current On-State Drain currenta Drain-Source On-State Resistancea Forward Transconductancea Diode Forward Voltagea VGS(th) IGSS IDSS ID(on) rDS(on) gfs VSD VDS = VGS, ID = 1.2 mA VDS = 0 V, VGS = 8 V VDS = 9.6 V, VGS = 0 V VDS = 9....
Description N-Channel 2.5-V (G-S) Rated MOSFET
N-Channel 2.5-V (G-S) MOSFET

File Size 93.83K  /  4 Page

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    http://
VISAY[Vishay Siliconix]
Part No. SI5515DC-T SI5515DC-T1-E3 SI5515DC
OCR Text ... = 85_C On-State On State Drain currenta ID( ) D(on) VDS w 5 V, VGS = 4.5 V VDS p -5 V, VGS = -4.5 V VGS = 4.5 V, ID = 4.4 A VGS = -4.5 V, ID = -3.0 A Drain-Source On-State Drain Source On State Resistancea rDS( ) DS(on) VGS = 2.5 V, ID = 4...
Description Complementary 20-V (D-S) MOSFET

File Size 79.35K  /  8 Page

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