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				List of Unclassifed Man... List of Unclassifed Manufacturers ZMD ETC[ETC] Electronic Theatre Controls, Inc.
Part No.	U631H16 U631H16BD1C25 U631H16BD1C35 U631H16BD1C45 U631H16BD1K25 U631H16BD1K35 U631H16BD1K45 U631H16BDC25 U631H16BDC35 U631H16BDC45 U631H16BDK25 U631H16BDK35 U631H16BDK45 U631H16BS1C25 U631H16BS1C35 U631H16BS1C45 U631H16BS1K25 U631H16BS1K35 U631H16BS1K45 U631H16BSC25 U631H16BSC35 U631H16BSC45 U631H16BSK25 U631H16BSK35 U631H16BSK45 U631H16D1C25 U631H16D1C35 U631H16D1C45 U631H16D1K25 U631H16D1K35 U631H16D1K45 U631H16DC25 U631H16DC35 U631H16DC45 U631H16DK25 U631H16DK35 U631H16DK45 U631H16S1C25 U631H16S1C35 U631H16S1C45 U631H16S1K25 U631H16S1K35 U631H16S1K45 U631H16SC25 U631H16SC35 U631H16SC45 U631H16SK25 U631H16SK35 U631H16SK45 DK25
OCR Text	...orporated in each static memory cell. The SRAM can be read and written an unlimited number of times, while independent nonvolatile data resi...based on a rise and fall time of 5 ns, measured between 10 % and 90 % of VI, as well as input level...
Description	SOFTSTORE 2K X 8 NVSRAM SOFTSTORE 2K × 8非易失性SRAM
File Size	273.57K / 12 Page	View it Online	Download Datasheet

				Zentrum Mikroelektronik... ZMD Zentrum Mikroelektronik Dresden GmbH ETC[ETC] Zentrum Mikroelektronik Dresden AG Electronic Theatre Controls, Inc.
Part No.	U634H256 U634H256D1A25 U634H256D1A25G1 U634H256D1A35 U634H256D1A35G1 U634H256D1A45 U634H256D1A45G1 U634H256D1C25 U634H256D1C25G1 U634H256D1C35 U634H256D1C35G1 U634H256D1C45 U634H256D1C45G1 U634H256D1K25 U634H256D1K25G1 U634H256D1K35 U634H256D1K35G1 U634H256D1K45 U634H256D1K45G1 U634H256D1M25 U634H256D1M25G1 U634H256D1M35 U634H256D1M35G1 U634H256D1M45 U634H256D1M45G1 U634H256SA25 U634H256SA25G1 U634H256SA35 U634H256SA35G1 U634H256SA45 U634H256SA45G1 U634H256SC25 U634H256SC25G1 U634H256SC35 U634H256SC35G1 U634H256SC45 U634H256SC45G1 U634H256SK25 U634H256SK25G1 U634H256SK35 U634H256SK35G1 U634H256SK45 U634H256SK45G1 U634H256SM25 U634H256SM25G1 U634H256SM35 U634H256SM35G1 U634H256SM45 U634H256SM45G1
OCR Text	...orporated in each static memory cell. The SRAM can be read and written an unlimited number of times, while independent nonvolatile data resi...based on a rise and fall time of 5 ns, measured between 10 % and 90 % of VI, as well as input level...
Description	POWERSTORE 32K X 8 NVSRAM POWERSTORE 32K的8非易失性SRAM
File Size	243.35K / 14 Page	View it Online	Download Datasheet

				ZMD ETC[ETC] List of Unclassifed Manufacturers Electronic Theatre Controls, Inc.
Part No.	U635H256 U635H256BD1C25 U635H256BD1C35 U635H256BD1C45 U635H256BD1K25 U635H256BD1K35 U635H256BD1K45 U635H256BDC25 U635H256BDC35 U635H256BDC45 U635H256BDK25 U635H256BDK35 U635H256BDK45 U635H256BSC25 U635H256BSC35 U635H256BSC45 U635H256BSK25 U635H256BSK35 U635H256BSK45 U635H256CD1C25 U635H256CD1C35 U635H256CD1C45 U635H256CD1K25 U635H256CD1K35 U635H256CD1K45 U635H256CDC25 U635H256CDC35 U635H256CDC45 U635H256CDK25 U635H256CDK35 U635H256CDK45 U635H256CSK45 U635H256CSC25 U635H256CSC35 U635H256CSC45 U635H256CSK25 U635H256CSK35
OCR Text	...orporated in each static memory cell. The SRAM can be read and written an unlimited number of times, while independent nonvolatile data resi...based on a rise and fall time of 5 ns, measured between 10 % and 90 % of V I, as well as input leve...
Description	POWER STORE 32K X 8 NVSRAM
File Size	208.04K / 13 Page	View it Online	Download Datasheet

				CYPRESS[Cypress Semiconductor]
Part No.	ULTRA37000 CY37032P44-125AC CY37032P44-125AI CY37032P44-125JC CY37032P44-125JI CY37032P44-154AC CY37032P44-154AI CY37032P44-154JC CY37032P44-154JI CY37032P44-200AC CY37032P44-200JC CY37064P100-200AC CY37064P44-200AC CY37064P44-200JC CY37064P84-200JC
OCR Text	...basis. In other words, each I/O cell can select between one of two OE product terms to control the output buffer. The first two of these fou...based on an AND expression or an OR expression. Clocking of the register is very flexible. Four glob...
Description	5V, 3.3V, ISR⑩ High-Performance CPLDs 5V, 3.3V, ISR High-Performance CPLDs
File Size	1,779.16K / 63 Page	View it Online	Download Datasheet

				VITESSE[Vitesse Semiconductor Corporation] ETC
Part No.	VSC870 VSC870TX
OCR Text	...t Alignment, Word Alignment and Cell Alignment * Three Modes of Operation: Distributed Control Packet Mode, Central Control Cell Mode and Di...based switching systems (Packet Mode), and centrally-controlled cell-based switching systems (Cell M...
Description	High Performance Serial Backplane Transceiver
File Size	509.00K / 40 Page	View it Online	Download Datasheet

				Winbond Electronics, Corp. WINBOND[Winbond]
Part No.	W55F05 W55F10 W55F20 W55FXX
OCR Text	...is typically used as the memory cell TM of a W51300 (voice recorder controller) or the ROM code emulator for the PowerSpeech series. The sin...Based Industrial Park, Hsinchu, Taiwan TEL: 886-3-5770066 FAX: 886-3-5792697 http://www.winbond.com....
Description	4 Mbit Uniform Sector, Serial Flash Memory 4兆位统一部门，串行闪 SERIAL FLASH EEPROM SERIES
File Size	71.95K / 7 Page	View it Online	Download Datasheet

				Electronic Theatre Controls, Inc. ETC FTDI Future Technology Devices International Ltd.
Part No.	FT8U232 FT8U232AM FT232AM
OCR Text	...for driving the USB transceiver cell output buffers. It requires an external decoupling capacitor to be attached to the 3V3OUT regulator output pin. * USB Transceiver The USB Transceiver Cell provides the USB 1.1 full-speed physical i...
Description	U-UART - USB UltraBaud Data Transfer IC with RS232 / RS422 and CPU I/F Options
File Size	39.59K / 13 Page	View it Online	Download Datasheet

				Motorola, Inc. ON Semi MOTOROLA[Motorola, Inc]
Part No.	MTP15N06VL MTP15N06VL_D ON2553
OCR Text	...y more than doubles the present cell density of our 50 and 60 volt TMOS devices. Just as with our TMOS E-FET designs, TMOS V is designed to ...based upon maximum peak junction temperature and a case temperature (TC) of 25C. Peak repetitive pul...
Description	TMOS POWER FET 15 AMPERES 60 VOLTS RDS(on) = 0.085 OHM From old datasheet system
File Size	215.91K / 8 Page	View it Online	Download Datasheet

				Motorola, Inc. ON Semi MOTOROLA[Motorola, Inc]
Part No.	MTP15N06V ON2554
OCR Text	...y more than doubles the present cell density of our 50 and 60 volt TMOS devices. Just as with our TMOS E-FET designs, TMOS V is designed to ...based upon maximum peak junction temperature and a case temperature (TC) of 25C. Peak repetitive pul...
Description	TMOS POWER FET 15 AMPERES 60 VOLTS RDS(on) = 0.12 OHM From old datasheet system
File Size	163.67K / 8 Page	View it Online	Download Datasheet

For cell-based Found Datasheets File :: 5267 Search Time::1.5ms
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