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Microsemi
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| Part No. |
APT12067JFLL
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| OCR Text |
...al gate structure. lower input capacitance increased power dissipation lower miller capacitance easier to drive lower gate charge, qg ...125c) gate-source leakage current (v gs = 30v, v ds = 0v) gate threshold voltage (v ds = v gs ,... |
| Description |
FREDFETs
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| File Size |
100.13K /
5 Page |
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it Online |
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Microsemi
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| Part No. |
APTGT50X60T3G
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| OCR Text |
...n typ max unit c ies input capacitance 3150 c oes output capacitance 200 c res reverse transfer capacitance v ge = 0v ...125c t j =150c 0 20 40 60 80 100 00.511.522.53 v ce (v) i c (a) output characteristics v ge =15v v... |
| Description |
Three Phase Bridge
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| File Size |
386.63K /
6 Page |
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it Online |
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Microsemi
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| Part No. |
APTDF100H20G
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| OCR Text |
...25c 500 a c t junction capacitance v r = 200v 400 pf dynamic characteristics symbol characteristic test conditions m...125c 110 ns t j = 25c 200 q rr reverse recovery charge t j = 125c 840 nc t ... |
| Description |
FRED 50-1700V
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| File Size |
361.45K /
5 Page |
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it Online |
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Microsemi
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| Part No. |
APT37F50B APT37F50S
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| OCR Text |
...e intrinsic gate resistance and capacitance of the poly-silicon gate structure help control di/dt during switching, resulting in low emi and...125c v gs = 30v test conditions v ds = 50v , i d = 18a v gs = 0v , v ds = 25v f = 1mhz... |
| Description |
FREDFETs
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| File Size |
172.10K /
4 Page |
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it Online |
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Microsemi
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| Part No. |
APT12057JFLL
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| OCR Text |
...al gate structure. lower input capacitance increased power dissipation lower miller capacitance easier to drive lower gate charge, qg ...125c) gate-source leakage current (v gs = 30v, v ds = 0v) gate threshold voltage (v ds = v gs ,... |
| Description |
FREDFETs
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| File Size |
158.03K /
5 Page |
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it Online |
Download Datasheet |
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Microsemi
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| Part No. |
APT8020LLLG
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| OCR Text |
... 38a 0.200 ?? ?? ? lower input capacitance increased power dissipation lower miller capacitance easier to drive lower gate charge, qg ...125c) gate-source leakage current (v gs = 30v, v ds = 0v) gate threshold voltage (v ds = v gs ,... |
| Description |
MOSFET
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| File Size |
242.17K /
5 Page |
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it Online |
Download Datasheet |
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Microsemi
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| Part No. |
APT6017LLLG
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| OCR Text |
...al gate structure. lower input capacitance increased power dissipation lower miller capacitance easier to drive lower gate charge, qg ...125c) gate-source leakage current (v gs = 30v, v ds = 0v) gate threshold voltage (v ds = v gs ,... |
| Description |
MOSFET
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| File Size |
152.32K /
5 Page |
View
it Online |
Download Datasheet |
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