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br-6 Datasheet PDF File

For br-6 Found Datasheets File :: 68681 Search Time::2.297ms
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				HITACHI[Hitachi Semiconductor]
Part No.	2SD975
OCR Text	...base breakdown voltage Symbol V(BR)CBO Min 150 60 5 -- 150 -- -- -- Typ -- -- -- -- -- -- -- -- Max -- -- -- 1.0 -- 0.5 1.3 0.6 V V s I C = 1.5 A, IB1 = -IB2 = 50 mA Unit V V V A Test conditions I C = 1 mA, IE = 0 I C = 10 mA, RBE = I E = ...
Description	Silicon NPN Epitaxial
File Size	31.05K / 6 Page	View it Online	Download Datasheet

				FUJI ELECTRIC HOLDINGS CO., LTD. FUJI[Fuji Electric]
Part No.	2SK2764-01R
OCR Text	...verse Recovery Charge Symbol V (BR)DSS V GS(th) I DSS I R g C C C t t t t I V t Q GSS DS(on) fs iss oss rss d(on) r d(off) f AV SD rr rr ...6 ID [A] ID [A] Tch [C] Typical Capacitances vs. VDS C=f(VDS); VGS=0V; f=1M...
Description	N-channel MOS-FET
File Size	292.33K / 2 Page	View it Online	Download Datasheet

				Motorola Inc Motorola, Inc. MOTOROLA[Motorola, Inc]
Part No.	4N33 4N29 4N30 4N32 4N31
OCR Text	... nA Volts Volts Volts -- V(BR)CBO V(BR)CEO V(BR)ECO hFE IC (CTR)(2) 50 (500) 10 (100) 5 (50) 7500 2500 1500 -- -- -- -- -- -- -- -- -- -- -- 1011 -- -- 0.2 0.6 -- -- -- -- -- -- -- 1.2 1 -- 5 mA (%) VISO Vac(pk) ...
Description	STANDARD THRU HOLE CASE 730A-04
File Size	286.89K / 6 Page	View it Online	Download Datasheet

				NXP Semiconductors N.V. Diodes, Inc. Diodes Inc. DIODES[Diodes Incorporated]
Part No.	BAT54C-7 BAT54S-7 BAT54A-7 BAT54-7 BAT54 BAT54S BAT54A BAT54C
OCR Text	...kdown Voltage (Note 1) Symbol V(BR)R Min 30 3/4 3/4 3/4 3/4 Typ 3/4 3/4 3/4 3/4 3/4 Max 3/4 240 320 400 500 1000 2.0 10 5.0 Unit V Test Cond...6 2003 P Jul 7 Aug 8 2004 R Sep 9 Oct O Nov N 2005 S Dec D DS11005 Rev. 12 - 2 YM 3 of 3 ...
Description	SURFACE MOUNT SCHOTTKY BARRIER DIODE 0.2 A, 30 V, 2 ELEMENT, SILICON, SIGNAL DIODE
File Size	67.16K / 3 Page	View it Online	Download Datasheet

				DIODES[Diodes Incorporated] Diodes Inc.
Part No.	BAT54CDW BAT54CDW-7 BAT54SDW-7 BAT54ADW BAT54ADW-7 BAT54BRW-7 BAT54TW BAT54TW-7 BAT54BRW BAT54SDW BAT54JW
OCR Text	...ss otherwise specified Symbol V(BR)R Min 30 Typ 3/4 3/4 3/4 3/4 3/4 Max 3/4 240 320 400 500 1000 2.0 10 5.0 Unit V Test Condition IR = 100mA...6 Jul 7 2006 T Aug 8 2007 U Sep 9 2008 V Oct O Nov N 2009 W Dec D DS30152 Rev. 7 - 2 KXX KX...
Description	SURFACE MOUNT SCHOTTKY BARRIER DIODE ARRAYS Low-Cost, Precision, High-Side Current-Sense Amplifier
File Size	45.33K / 2 Page	View it Online	Download Datasheet

				Infineon Technologies A... INFINEON[Infineon Technologies AG]
Part No.	BCM846S
OCR Text	...tage IC = 10 mA, IB = 0 A V(BR)CEO V(BR)CBO V(BR)CES V(BR)EBO ICBO 65 80 80 6 - - V Collector-base breakdown voltage IC = 10 A, IE = 0 A Collector-emitter breakdown voltage IC = 10 A, VBE = 0 A Emitter-base breakd...
Description	NPN Silicon AF Transistor Array
File Size	183.86K / 7 Page	View it Online	Download Datasheet

				PHILIPS[Philips Semiconductors] NXP Semiconductors
Part No.	BFG520W BFG520W_X BFG520W/X
OCR Text	...s otherwise specified. SYMBOL V(BR)CBO V(BR)CES V(BR)EBO ICBO hFE Cre fT GUM PARAMETER collector-base breakdown voltage emitter-base breakdo...6 V; IE = 0 IC = 20 mA; VCE = 6 V; see Fig.3 IC = 0; VCB = 6 V; f = 1 MHz; see Fig.4 IC = 20 mA; VCE...
Description	NPN 9GHz wideband transistor(NPN 9G赫兹宽带晶体 NPN 9 GHz wideband transistors
File Size	154.15K / 16 Page	View it Online	Download Datasheet

				SIEMENS AG SIEMENS[Siemens Semiconductor Group] Infineon
Part No.	BTS120 C67078-A5009-A2
OCR Text	... MHz Values typ. max. Unit V(BR)DSS 100 - 3.0 - 3.5 V VGS(th) 2.5 I DSS - - 1 100 10 300 A I GSS - - 10 2 0.09 100 4 0...6 BTS 120 Continuous drain current ID = f (TC) Parameter: VGS 10 V Forward characteristics...
Description	From old datasheet system TEMPFET (N channel Enhancement mode Temperature sensor with thyristor characteristic) N-Channel TEMPFET
File Size	310.34K / 9 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	CPV364M4K
OCR Text	...(unless otherwise specified) V(BR)CES V(BR)CES/TJ VCE(on) VGE(th) VGE(th)/TJ gfe ICES VFM IGES Parameter Min. Collector-to-Emitte...6.0 VCE = VGE , IC = 250A --- mV/C VCE = VGE , IC = 250A --- S VCE = 100V, IC = 10A 250 A VGE = 0V, ...
Description	IGBT SIP MODULE
File Size	269.79K / 10 Page	View it Online	Download Datasheet

				Mitsubishi Electric Sem... MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No.	FS7KM-12
OCR Text	...ICAL CHARACTERISTICS Symbol V (BR) DSS V (BR) GSS IGSS IDSS VGS (th) rDS (ON) VDS (ON) yfs Ciss Coss Crss td (on) tr td (off) tf VSD Rth (c...6 8 4 5V 2 4 5V 0 0 10 20 30 40 50 0 0 4 8 12 16 ...
Description	HIGH-SPEED SWITCHING USE
File Size	44.52K / 4 Page	View it Online	Download Datasheet

For br-6 Found Datasheets File :: 68681 Search Time::2.297ms
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