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NXP Semiconductors N.V. Philips
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Part No. |
BSP030-04 BSP030
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OCR Text |
...0 30 20 10 6.3 40 8.3 +150 +150 9 40 Unit V V V A A A W C C A A
Source-drain diode
9397 750 07268
(c) Philips Electronics N.V. 2000. All rights reserved.
Product specification
Rev. 04 -- 26 July 2000
2 of 13
Philips Sem... |
Description |
N-channel TrenchMOS intermediate level FET N沟道 TrenchMOS 中间级场效应 N-channel enhancement mode field-effect transistor From old datasheet system
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File Size |
156.22K /
13 Page |
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ICS
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Part No. |
M2006-04
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OCR Text |
9 x 9 mm SMT)
nDIF_REF1 GND REF_CLK DIF_REF0 nDIF_REF0 REF_SEL1 S_LOAD S_DATA VCC DIF_REF1 REF_SEL0 ADD_CLK DROP_CLK NBW VCC DNC DNC DNC 27 26 25 24 23 22 21 20 19
GENERAL DESCRIPTION
The M2006-04 is a VCSO (Voltage Controlled SAW Osci... |
Description |
VCSO Frequency Translator
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File Size |
300.56K /
12 Page |
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it Online |
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Vishay Semiconductors
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Part No. |
BAS70-04-V-G-18 BAS70-00-V-G-18
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OCR Text |
...document no.: 6.541-5014.01-4 0.9 (0.035) 1 (0.039) 0.9 (0.035) 1 (0.039) 1.43 (0.056) 0.45 (0.018) 0.35 (0.014) 2.8 (0.110) 3.1 (0.122) 0.45 (0.018) 0.35 (0.014) 0.45 (0.018) 0.35 (0.014) 0.1 (0.004) max. 2.35 (0.093) 2.6 (0.102) 0.175 (0.... |
Description |
SCHOTTKY DIODE SOT23-E3-G
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File Size |
73.71K /
3 Page |
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Infineon Technologies AG
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Part No. |
SPP80N04S2L-04
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OCR Text |
...ge v sd v gs =0v, i f =80a - 0.9 1.3 v reverse recovery time t rr v r =20v, i f = l s , d i f /d t =100a/s - 62 78 ns reverse recovery charge q rr - 145 180 nc
2000-07-12 page 4 spp80n04s2l-04 spb80n04s2l-04 preliminary data 1 power d... |
Description |
80 A, 40 V, 0.0045 ohm, N-CHANNEL, Si, POWER, MOSFET PLASTIC, TO-220, 3 PIN
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File Size |
99.77K /
8 Page |
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Price and Availability
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