Part Number Hot Search : 
C00RP UM8411Z AD580M 25C32PST M24128 HWD62 U20C20 2SD2384
Product Description
Full Text Search
  9 11-channel Datasheet PDF File

For 9 11-channel Found Datasheets File :: 94568    Search Time::7.219ms    
Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | <12> | 13 | 14 | 15 |   

    IRF5305L IRF5305S

IRF[International Rectifier]
Part No. IRF5305L IRF5305S
OCR Text ... 5 V 2 0 s P U L S E W ID TH 8 9 10 A 0.0 -60 -40 -20 0 20 40 60 80 V G S = -1 0V 100 120 140 160 180 A -V G S , G ate -t...11. Maximum Effective Transient Thermal Impedance, Junction-to-Case www.irf.com - V DD 5...
Description Power MOSFET(Vdss=-55V/ Rds(on)=0.06ohm/ Id=-31A)
Power MOSFET(Vdss=-55V, Rds(on)=0.06ohm, Id=-31A)

File Size 167.31K  /  10 Page

View it Online

Download Datasheet





    IRF5305

IRF[International Rectifier]
Part No. IRF5305
OCR Text ... 5 V 2 0 s P U L S E W ID TH 8 9 10 A 0.0 -60 -40 -20 0 20 40 60 80 V G S = -10 V 100 120 140 160 180 A -V G S , G ate -t...11. Maximum Effective Transient Thermal Impedance, Junction-to-Case www.irf.com - RG VDD...
Description Power MOSFET(Vdss=-55V, Rds(on)=0.06ohm, Id=-31A)

File Size 120.44K  /  8 Page

View it Online

Download Datasheet

    IRF530A

FAIRCHILD[Fairchild Semiconductor]
Part No. IRF530A
OCR Text ...ent (TC=25 C) Value 100 14 9.9 1 O Units V A A V mJ A mJ V/ns W W/ C Continuous Drain Current (TC=100 C) Drain Current-Pulse...11 ------10.25 610 150 62 13 14 55 36 27 4.5 12.8 --4.0 100 -100 10 100 0.11 -790 175 72 40 40 110 8...
Description N-CHANNEL POWER MOSFET
Advanced Power MOSFET

File Size 253.11K  /  7 Page

View it Online

Download Datasheet

    IRF530FI IRF530 3003

SGS Thomson Microelectronics
STMicroelectronics
Part No. IRF530FI IRF530 3003
OCR Text ... V GS = 10 V Min. Typ. 12 20 32 9 13 Max. 16 28 44 Unit ns ns nC nC nC SWITCHING OFF Symbo l tr (Voff) tf tc Parameter Off-voltage Rise ...11 12 25 Max. 15 17 35 Unit ns ns ns SOURCE DRAIN DIODE Symbo l ISD I SDM (*) V SD () t rr Q rr ...
Description From old datasheet system
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR

File Size 46.69K  /  6 Page

View it Online

Download Datasheet

    IRF530FP 5758

SGS Thomson Microelectronics
STMICROELECTRONICS[STMicroelectronics]
Part No. IRF530FP 5758
OCR Text ...D = 16 A =8A Min. Typ. 12 20 32 9 13 Max. 16 28 44 Unit ns ns nC nC nC V GS = 10 V SWITCHING OFF Symbol t r(Voff) tf tc Parameter Off...11 12 25 Max. 15 17 35 Unit ns ns ns SOURCE DRAIN DIODE Symbol I SD I SDM (*) V SD () t rr Q rr ...
Description N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR
From old datasheet system

File Size 76.48K  /  5 Page

View it Online

Download Datasheet

    IRF530L IRF530NS IRF530NL

International Rectifier
Part No. IRF530L IRF530NS IRF530NL
OCR Text ...lanche Energy Avalanche Current*9.0 Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range ...11 VGS = 10V, ID = 9.0A 4.0 V VDS = VGS, ID = 250A --- S VDS = 50V, ID = 9.0A 25 VDS = 100V, VGS =...
Description Power MOSFET(Vdss=100V/ Rds(on)=0.11ohm/ Id=17A)
HEXFET Power MOSFET
Power MOSFET(Vdss=100V, Rds(on)=0.11ohm, Id=17A)

File Size 174.65K  /  10 Page

View it Online

Download Datasheet

    IRF530N

NXP Semiconductors N.V.
PHILIPS[Philips Semiconductors]
Part No. IRF530N
OCR Text ...in free air TYP. MAX. UNIT 60 1.9 K/W K/W ELECTRICAL CHARACTERISTICS Tj= 25C unless otherwise specified SYMBOL PARAMETER V(BR)DSS VGS(TO...11 10 0.05 6 36 18 12 3.5 4.5 7.5 633 103 61 4 6 110 275 100 10 250 40 5.6 19 V V V V V m m S nA A A...
Description N-channel TrenchMOS transistor(N沟道 TrenchMOS 晶体
N-channel TrenchMOS TM transistor

File Size 95.87K  /  7 Page

View it Online

Download Datasheet

    IRF7106 IRF7106TR

IRF[International Rectifier]
Part No. IRF7106 IRF7106TR
OCR Text 9.1098B PRELIMINARY IRF7106 N-CHANNEL MOSFET 1 8 HEXFET (R) Power MOSFET Advanced Process Technology Ultra Low On-Resistance Dual N...11 25 1.2 -- 1.6 -- 2.5 -- 3.5 -- 5.0 15 10 40 10 20 15 40 29 50 41 90 22 50 39 60 4.0 -- 6.0 -- 300...
Description 20V Dual N- and P- Channel HEXFET Power MOSFET in a SO-8 package
Power MOSFET(Vdss= -20V)

File Size 157.44K  /  7 Page

View it Online

Download Datasheet

    IRF7807D1

International Rectifier
Part No. IRF7807D1
OCR Text ... QSW Qoss Rg 10.5 12 2.1 0.76 2.9 3.66 15.3 1.2 +/- 100 14 17 nA nC 5.2 18.4 VDS = 16V, VGS = 0 Schottky Diode & Body Diode ...11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient (HEXFET(R) MOSFET) www.irf...
Description MOSFET / SCHOTTKY DIODE

File Size 162.75K  /  8 Page

View it Online

Download Datasheet

    IRF7807D2

International Rectifier
Part No. IRF7807D2
OCR Text ... QSW Qoss Rg 10.5 12 2.1 0.76 2.9 3.66 17.6 1.2 +/- 100 14 17 nA 5.2 21.6 VDS = 16V, VGS = 0 Schottky Diode & Body Diode Rating...11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient (MOSFET) www.irf.com 5 ...
Description MOSFET / SCHOTTKY DIODE

File Size 131.40K  /  8 Page

View it Online

Download Datasheet

For 9 11-channel Found Datasheets File :: 94568    Search Time::7.219ms    
Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | <12> | 13 | 14 | 15 |   

▲Up To Search▲

 




Price and Availability




 
Price & Availability of 9 11-channel

All Rights Reserved © IC-ON-LINE 2003 - 2022  

[Add Bookmark] [Contact Us] [Link exchange] [Privacy policy]
Mirror Sites :  [www.datasheet.hk]   [www.maxim4u.com]  [www.ic-on-line.cn] [www.ic-on-line.com] [www.ic-on-line.net] [www.alldatasheet.com.cn] [www.gdcy.com]  [www.gdcy.net]


 . . . . .
  We use cookies to deliver the best possible web experience and assist with our advertising efforts. By continuing to use this site, you consent to the use of cookies. For more information on cookies, please take a look at our Privacy Policy. X
0.83193516731262