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				Mitsubishi Electric, Corp.
Part No.	M2V56S40TP-8
OCR Text	8 256m synchronous dram 1 m2v56s20tp is a 4-bank x 16777216-word x 4-bit, m2v56s30tp is a 4-bank x 8388608-word x 8-bit, m2v56s40tp is a 4-...row address a0-12 / column address a0-9,11(x4)/ a0-9(x8)/ a0-8(x16) - lvttl interface - 400-mil, 54-...
Description	256M Synchronous DRAM 256M同步DRAM
File Size	252.86K / 49 Page	View it Online	Download Datasheet

				Hynix Semiconductor
Part No.	HYM71V16655HCLT8M-8 HYM71V16655HCT8M-8 HYM71V16655HCLT8M-P HYM71V16655HCT8M-P HYM71V16655HCLT8M-S HYM71V16655HCT8M-S
OCR Text	...th and burst type - 1, 2, 4 or 8 or full page for sequential burst - 1, 2, 4 or 8 for interleave burst ? programmable cas latency ; 2, 3 ...row address : ra0 ~ ra11, co lumn address : ca0 ~ ca9 auto-precharge flag : a10 /ras, /cas, /we row ...
Description	SDRAM - Unbuffered DIMM 128MB
File Size	231.78K / 14 Page	View it Online	Download Datasheet

				Hynix Semiconductor
Part No.	HYM71V16755HCLT8M-8 HYM71V16755HCT8M-8 HYM71V16755HCLT8M-P HYM71V16755HCT8M-P HYM71V16755HCLT8M-S HYM71V16755HCT8M-S
OCR Text	...th and burst type - 1, 2, 4 or 8 or full page for sequential burst - 1, 2, 4 or 8 for interleave burst ? programmable cas latency ; 2, 3 ...row address : ra0 ~ ra11, co lumn address : ca0 ~ ca9 auto-precharge flag : a10 /ras, /cas, /we row ...
Description	SDRAM - Unbuffered DIMM 128MB
File Size	234.78K / 14 Page	View it Online	Download Datasheet

				Hynix Semiconductor
Part No.	HYM71V32655HCLT8M-8 HYM71V32655HCT8M-8 HYM71V32655HCLT8M-P HYM71V32655HCT8M-P HYM71V32655HCLT8M-S HYM71V32655HCT8M-S
OCR Text	...th and burst type - 1, 2, 4 or 8 or full page for sequential burst - 1, 2, 4 or 8 for interleave burst ? programmable cas latency ; 2, 3 ...row address : ra0 ~ ra11, co lumn address : ca0 ~ ca9 auto-precharge flag : a10 /ras, /cas, /we row ...
Description	SDRAM - Unbuffered DIMM 256MB
File Size	250.58K / 14 Page	View it Online	Download Datasheet

				Hynix Semiconductor
Part No.	HYM71V32755HCLT8M-8 HYM71V32755HCT8M-8 HYM71V32755HCLT8M-P HYM71V32755HCT8M-P HYM71V32755HCLT8M-S HYM71V32755HCT8M-S
OCR Text	...th and burst type - 1, 2, 4 or 8 or full page for sequential burst - 1, 2, 4 or 8 for interleave burst ? programmable cas latency ; 2, 3 ...row address : ra0 ~ ra11, co lumn address : ca0 ~ ca9 auto-precharge flag : a10 /ras, /cas, /we row ...
Description	SDRAM - Unbuffered DIMM 256MB
File Size	255.64K / 14 Page	View it Online	Download Datasheet

				Infineon Technologies AG
Part No.	HYE25L128800AC-8 HYB25L128800AC-7.5
OCR Text	...2mbit x16 and 4 banks x 4mbit x 8 with additional features for mobile applications. these synchronous mobile rams achieve high speed data tr...row address strobe v ss ground cas column address strobe v ddq power for dq ? s (+1.8 v) we write en...
Description	16M X 8 SYNCHRONOUS DRAM, 6 ns, PBGA54 9 X 8 MM, FBGA-54 16M X 8 SYNCHRONOUS DRAM, 5.4 ns, PBGA54
File Size	403.51K / 51 Page	View it Online	Download Datasheet

				Mitsubishi Electric, Corp. Mitsubishi Electric Corporation
Part No.	M2V56S20ATP-8 M2V56S30ATP-8 M2V56S40ATP-8
OCR Text	8 256m synchronous dram 1 m2v56s20tp is a 4-bank x 16777216-word x 4-bit, m2v56s30tp is a 4-bank x 8388608-word x 8-bit, m2v56s40tp is a 4-...row address a0-12 / column address a0-9,11(x4)/ a0-9(x8)/ a0-8(x16) - lvttl interface - 400-mil, 54-...
Description	256M Synchronous DRAM 256M同步DRAM
File Size	238.67K / 49 Page	View it Online	Download Datasheet

				Infineon Technologies AG
Part No.	HYB39S64160ETL-8 HYB39S64400ETL-8 HYB39S64400ETL-7.5 HYB39S64800ETL-7.5 HYB39S64800ETL-8
OCR Text	...anks 4mbit 4, 4 banks 2mbit 8 and 4 banks 1mbit 16 respectively. these synchron- ous devices achieve high speed data transfer rates by...row address strobe v ss ground cas column address strobe v ddq power for dq ? s (+ 3.3 v) we write e...
Description	4M X 16 SYNCHRONOUS DRAM, 6 ns, PDSO54 10.16 X 22.22 MM, 0.80 MM PITCH, PLASTIC, TSOP2-54 16M X 4 SYNCHRONOUS DRAM, 6 ns, PDSO54 10.16 X 22.22 MM, 0.80 MM PITCH, PLASTIC, TSOP2-54 16M X 4 SYNCHRONOUS DRAM, 5.4 ns, PDSO54 10.16 X 22.22 MM, 0.80 MM PITCH, PLASTIC, TSOP2-54 8M X 8 SYNCHRONOUS DRAM, 5.4 ns, PDSO54 10.16 X 22.22 MM, 0.80 MM PITCH, PLASTIC, TSOP2-54 8M X 8 SYNCHRONOUS DRAM, 6 ns, PDSO54 10.16 X 22.22 MM, 0.80 MM PITCH, PLASTIC, TSOP2-54
File Size	371.32K / 55 Page	View it Online	Download Datasheet

				Etron Technology, Inc
Part No.	EM639165TS-8 ETRONTECHNOLOGYINC-EM639165TS-75L
OCR Text	...2 or 3 - burst length: 1, 2, 4, 8 or full page - burst type: interleaved or linear burst byte control ? dqml and dqmu random column acc...row active time (max.) 45/48 ns t rc row cycle time(min.) 67.5/70 ns overview em639165 is a high-spe...
Description	8Mega x 16bits SDRAM 8Mega x 16位内
File Size	666.18K / 48 Page	View it Online	Download Datasheet

				Mitsubishi Electric Corporation
Part No.	MH16S72BDFA-8 MH16S72BDFA-7
OCR Text	8 mitsubishi lsis 19 /jun/1999 mit-ds-0329-0.0 description application main memory unit for computers, microcomputer memory. prelimi...row/column address in conjunction with ba.the row address is specified by a0-11.the column address...
Description	1,207,959,552-BIT ( 16,777,216-WORD BY 72-BIT ) Synchronous DYNAMIC RAM
File Size	1,153.28K / 56 Page	View it Online	Download Datasheet

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