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For 8-bit 4m Found Datasheets File :: 3452 Search Time::2.25ms
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				List of Unclassifed Manufacturers ETC
Part No.	SPCA514A
OCR Text	...upt pipe Support 2M / 4m / 8M x 8 bit NAND-type Flash memory Hardware generated ECC code for flash memory access Support SPI and NextFlash serial interface Support SPCA751 interface 100-pin LQFP SPCA514A 3. Function d...
Description	Digital Audio USB Controller
File Size	109.47K / 14 Page	View it Online	Download Datasheet

				Maxim Integrated Products, Inc. DALLAS[Dallas Semiconductor] DALLAS[Dallas Semiconducotr] MAXIM - Dallas Semiconductor
Part No.	DS1216F DS1216C DS1216 DS1216B DS1216H DS1216D DS1216E
OCR Text	...nd years Converts standard 2k x 8 up to 512k x 8 CMOS static RAMs into nonvolatile memory Embedded lithium energy cell maintains watch infor...Bit 2 (Read/Write [ROM]) - Address Bit 0 (Data Input [ROM]) - Ground - Conditioned Chip Enable - Out...
Description	SmartWatch RAM DS1216B/C/D/H SmartWatch ROM DS1216E/F SmartWatch RAM DS1216B/C/D/HSmartWatch ROM DS1216E/F
File Size	331.08K / 13 Page	View it Online	Download Datasheet

				Hitachi,Ltd. HITACHI[Hitachi Semiconductor]
Part No.	HM62W8511HC HM62W8511HCJP-10 HM62W8511HCLJP-10
OCR Text	8-bit) ADE-203-1201 (Z) Preliminary Rev. 0.0 Sep. 20, 2000 Description The HM62W8511HC is a 4-Mbit high speed static RAM organized 512-kword x 8-bit. It has realized high speed access time by employing CMOS process (6-transistor memory ...
Description	4m High Speed SRAM (512-kword x 8-bit)
File Size	64.72K / 14 Page	View it Online	Download Datasheet

				HITACHI[Hitachi Semiconductor]
Part No.	HM62W8511HI HM62W8511HJPI-15
OCR Text	8-bit) ADE-203-1036A(Z) Rev. 1.0 Apr. 15, 1999 Description The HM62W8511HI is a 4-Mbit high speed static RAM organized 512-kword x 8-bit. It has realized high speed access time by employing CMOS process (4-transistor + 2-poly resistor m...
Description	4m High Speed SRAM (512-kword x 8-bit)
File Size	61.93K / 13 Page	View it Online	Download Datasheet

				HITACHI[Hitachi Semiconductor]
Part No.	HM62W8511H HM62W8511HJP-12 HM62W8511HJP-15 HM62W8511HLJP-12 HM62W8511HLJP-15
OCR Text	8-bit) ADE-203-750D (Z) Rev. 1.0 Sep. 15, 1998 Description The HM62W8511H is a 4-Mbit high speed static RAM organized 512-kword x 8-bit. It has realized high speed access time by employing CMOS process (4-transistor + 2-poly resistor me...
Description	4m High Speed SRAM (512-kword x 8-bit)
File Size	67.93K / 13 Page	View it Online	Download Datasheet

				SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor] Samsung Electronic
Part No.	K4S561632A K4S561632A-TC_L1H K4S561632A-TC_L1L K4S561632A-TC_L75 K4S561632A-TC_L80 K4S561632A-TC/L1H K4S561632A-TC/L1L K4S561632A-TC/L75 K4S561632A-TC/L80
OCR Text	... & 3) -. Burst length (1, 2, 4, 8 & Full page) -. Burst type (Sequential & Interleave) * All inputs are sampled at the positive going edge of the system clock. * Burst read single-bit write operation * DQM for masking * Auto & self refresh ...
Description	256Mbit SDRAM 4m x 16bit x 4 Banks Synchronous DRAM LVTTL
File Size	125.82K / 10 Page	View it Online	Download Datasheet

				Samsung Semiconductor Co., Ltd. SAMSUNG[Samsung semiconductor] Samsung Electronic
Part No.	K4S561632B K4S561632B-TC_L1L K4S561632B-TC_L1H K4S561632B-TC_L75 K4S561632B-TC/L1L K4S561632B-TC/L75 K4S561632B-TC/L1H
OCR Text	... & 3) -. Burst length (1, 2, 4, 8 & Full page) -. Burst type (Sequential & Interleave) * All inputs are sampled at the positive going edge of the system clock. * Burst read single-bit write operation * DQM for masking * Auto & self refresh ...
Description	256Mbit SDRAM 4m x 16bit x 4 Banks Synchronous DRAM LVTTL 56Mbit SDRAM米16 × 4银行同步DRAM LVTTL
File Size	130.19K / 11 Page	View it Online	Download Datasheet

				SAMSUNG[Samsung semiconductor] Samsung Electronic
Part No.	K4S561632D K4S561632D-TC_L75 K4S561632D-TC_L1H K4S561632D-TC_L1L K4S561632D-TC_L60 K4S561632D-TC_L7C K4S561632D-TC/L1H K4S561632D-TC/L1L K4S561632D-TC/L60 K4S561632D-TC/L75 K4S561632D-TC/L7C K4S561632D-TC75000
OCR Text	... & 3) -. Burst length (1, 2, 4, 8 & Full page) -. Burst type (Sequential & Interleave) * All inputs are sampled at the positive going edge of the system clock. * Burst read single-bit write operation * DQM for masking * Auto & self refresh ...
Description	256Mbit SDRAM 4m x 16bit x 4 Banks Synchronous DRAM LVTTL
File Size	59.61K / 11 Page	View it Online	Download Datasheet

				Samsung Electronic SAMSUNG[Samsung semiconductor] SAMSUNG SEMICONDUCTOR CO. LTD. Samsung Semiconductor Co., Ltd.
Part No.	K4S561633C-N K4S561633C-P1H K4S561633C-P1L K4S561633C-P75 K4S561633C-RBL K4S561633C-RL K4S561633C-RL75
OCR Text	...& 3). -. Burst length (1, 2, 4, 8 & Full page). -. Burst type (Sequential & Interleave). * All inputs are sampled at the positive going edge of the system clock. * Burst read single-bit write operation. * DQM for masking * Auto refresh. * 6...
Description	From old datasheet system IC,SDRAM,4X4mX16,CMOS,BGA,54PIN,PLASTIC 16Mx16 SDRAM 54CSP 16Mx16显示内存54CSP
File Size	58.25K / 8 Page	View it Online	Download Datasheet

				SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor] Samsung Electronic
Part No.	K4S561633F K4S561633F-C K4S561633F-E K4S561633F-F1H K4S561633F-F1L K4S561633F-F75 K4S561633F-G K4S561633F-L K4S561633F-N K4S561633F-X K4S561633F-XE
OCR Text	...& 3). -. Burst length (1, 2, 4, 8 & Full page). -. Burst type (Sequential & Interleave). * EMRS cycle with address key programs. * All input...bit write operation. * Special Function Support. -. PASR (Partial Array Self Refresh). -. Internal T...
Description	4m x 16Bit x 4 Banks Mobile SDRAM in 54BOC
File Size	111.69K / 12 Page	View it Online	Download Datasheet

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