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  7.9a Datasheet PDF File

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    FDB253210 FDB2532F085

Fairchild Semiconductor
Part No. FDB253210 FDB2532F085
OCR Text 79a, 16m features ?r ds(on) = 14m (typ.), v gs = 10v, i d = 33a ?q g (tot) = 82nc (typ.), v gs = 10v ? low miller charge ?low q rr body diode ? uis capability (single pulse and repetitive pulse) ? qualified to aec q101 formerly devel...
Description N-Channel PowerTrench? MOSFET 150V, 79A, 16mΩ

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    Fairchild
Part No. FDB2532FDP2532FDI2532
OCR Text 79A, 16m Features * rDS(ON) = 14m (Typ.), VGS = 10V, ID = 33A * Qg(tot) = 86nC (Typ.), VGS = 10V * Low Miller Charge * Low QRR Body Diode * UIS Capability (Single Pulse and Repetitive Pulse) * Qualified to AEC Q101 Formerly developmental...
Description N-Channel PowerTrench® MOSFET

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    IRHM7064 JANSF2N7431 JANSG2N7431 IRHM7064UPBF IRHM8064

International Rectifier, Corp.
Part No. IRHM7064 JANSF2N7431 JANSG2N7431 IRHM7064UPBF IRHM8064
OCR Text ...Resistance (Normalized) ID = 79A I D , Drain-to-Source Current (A) 2.0 TJ = 25 C 1.5 100 TJ = 150 C 1.0 0.5 10 V DS = 25V 20s PULSE WIDTH 5 6 7 8 9 10 11 12 0.0 -60 -40 -20 VGS = 12V 0 20 40 60 80 1...
Description 60V 1000kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a TO-254AA package
60V 100kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a TO-254AA package
60V 300kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a TO-254AA package
RADIATION HARDENED POWER MOSFET
60V 600kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a TO-254AA package 60V00kRad高可靠性单N沟道MOSFET的工贸硬化在TO - 254AA封装

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    Cirrus Logic, Inc.
Part No. PA10A
OCR Text ...s to 0, the current limit is 0.79a resulting in an internal dissipa - tion of 33.3 w. when output voltage increases to 36v, the current limit is 1.69a. refer to application note 9 on foldover limiting for details. external conn...
Description Linear Op-Amp, 90V, 5A &quot;Select&quot; Grade RoHS Compliant: Yes OP-AMP, 4000 uV OFFSET-MAX, 4 MHz BAND WIDTH, CBFM8

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    BUK7735-55A127

NXP SEMICONDUCTORS
Part No. BUK7735-55A127
OCR Text ...sed; t p 10 m s; figure 3 [1] -79a p tot total power dissipation t mb =25 c; figure 1 -25w t stg storage temperature - 55 +150 c t j operating junction temperature - 55 +150 c source-drain diode i dr reverse drain current (dc) t mb =25 ...
Description 20 A, 55 V, 0.035 ohm, N-CHANNEL, Si, POWER, MOSFET

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    IRHM7064 IRHM7064-15

International Rectifier
Part No. IRHM7064 IRHM7064-15
OCR Text ...zed) j ds(on) v = i = gs d 12v 79a 35a www.irf.com 5 pre-irradiation irhm7064, jansr2n7431 ! ! " ...
Description 35 A, 60 V, 0.021 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-254AA
Simple Drive Requirements

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    NEC Corp.
NEC[NEC]
Part No. NE5500179A NE5500179A-T1
OCR Text ...rt Number NE5500179A-T1 Package 79A Marking R1 Supplying Form * 12 mm wide embossed taping * Gate pin face the perforation side of the tape * Qty 1 kpcs/reel Remark To order evaluation samples, consult your NEC sales representative. Part...
Description SILICON POWER MOS FET

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    IRF7207 IRF7207TR

IRF[International Rectifier]
Part No. IRF7207 IRF7207TR
OCR Text ...rature. ISD -5.4A, di/dt -79A/s, VDD V(BR)DSS, TJ 150C Starting TJ = 25C, L = 9.6mH RG = 25, IAS = -5.4A. Pulse width 300s; duty cycle 2%. When mounted on 1 inch square copper board, t<10 sec 2 www.irf.com IRF7...
Description Generation 5 Technology
HEXFET? Power MOSFET
-20V Single P-Channel HEXFET Power MOSFET in a SO-8 package

File Size 87.92K  /  7 Page

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    Naina Semiconductor
Part No. 40NT
OCR Text ...tage (t j = 25 0 c, i peak = 79a) maximum holding current @ t j maximum latching current @t j maximum rate of rise of turn-on current, v drm 600v critical rate of rise of off-state voltage t j = t j maximum, 100% v drm t ...
Description Phase Control Thyristors

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