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FUJI[Fuji Electric]
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| Part No. |
2SK3776-01
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| OCR Text |
...
1
2
3
4
5
6
7
8
9
10
1
10
100
VGS[V]
ID [A]
0.20
Typical Drain-Source on-state Resistance RDS(on)=f(ID):80 s pulse test,Tch=25C
VGS=6V 6.5V 7V
0.20
Drain-Source On-state Resistance RD... |
| Description |
N-CHANNEL SILICON POWER MOSFET
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| File Size |
104.72K /
4 Page |
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it Online |
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FUJI[Fuji Electric]
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| Part No. |
2SK3772-01
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| OCR Text |
...4 1970 2955 335 502 20 30 29 44 7.5 11 57 86 7 10.5 44.5 67 18 27 13.5 20.5 0.90 1.50 270 3.0
ns
nC
V ns C
Thermal characteristi...6.5V 10 VGS=6.0V
0 0 25 50 75 100 125 150
0 0 4 8 12 16 20 24
Tc [C]
VDS [V]
100
T... |
| Description |
N-CHANNEL SILICON POWER MOSFET
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| File Size |
93.50K /
4 Page |
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it Online |
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FUJI[Fuji Electric]
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| Part No. |
2SK3727-01
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| OCR Text |
...0 s pulse test,Tch=25C
20V 10V 7.0V 6.5V
6.0V
ID [A]
40
PD [W]
1.5
1.0
20
VGS=5.5V 0.5
0 0 25 50 75 100 125 150
0.0 0 5 10 15 20
Tc [C]
VDS [V]
10
Typical Transfer Characteristic ID=f(VGS):80 s pulse... |
| Description |
N-CHANNEL SILICON POWER MOSFET
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| File Size |
98.79K /
4 Page |
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it Online |
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FUJI ELECTRIC CO LTD
FUJI[Fuji Electric]
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| Part No. |
2SK3698-01
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| OCR Text |
...atings VDS 900 VDSX *5 900 ID 3.7 ID(puls] 14.8 VGS 30 IAR *2 3.7 EAS *1 171.1 dVDS/dt *4 40 dV/dt *3 5 PD Ta=25C 2.02 Tc=25C 120 Tch +150 -...6 5.6 1.50
Units
V V A nA S pF
2
3.31 4 430 60 3.5 19 7 32 17 16.5 6.4 3.7 0.9 1.0 4.0
... |
| Description |
N-CHANNEL SILICON POWER MOSFET
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| File Size |
100.56K /
4 Page |
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it Online |
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SANYO[Sanyo Semicon Device]
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| Part No. |
2SK3685-01
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| OCR Text |
...nits
V V A nA S pF
10 0.29 7.5 15 1560 2340 230 345 8 12 29 43.5 13 19.5 56 84 8 12 34 51 13 19.5 10 15 19 1.20 1.50 0.57 7.0
ns
...6.5V
VGS=6.0V
0 0 25 50 75 Tc [C] 100 125 150
0 0 4 8 12 VDS [V] 16 20 24
Typical Transf... |
| Description |
POWER MOSFET N-CHANNEL SILICON POWER MOSFET
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| File Size |
105.22K /
4 Page |
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it Online |
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FUJI[Fuji Electric]
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| Part No. |
2SK3680-01
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| OCR Text |
...IAR EAS dVDS/dt dV/dt PD 26 802.7 20 5 2.50 600 +150 -55 to +150 Unit V V A A V A Remarks VGS=-30V
Operating and storage Tch temperature ...6.0V 6.5V
Typical Transfer Characteristic ID=f(VGS):80 s pulse test,VDS=25V,Tch=25 C
100 100
... |
| Description |
N-CHANNEL SILICON POWER MOSFET
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| File Size |
109.36K /
4 Page |
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it Online |
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FUJI[Fuji Electric]
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| Part No. |
2SK3593-01
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| OCR Text |
...
EAS [mJ]
ID [A]
80
7.5V 7.0V
400
IAS=35A
200
IAS=57A
40
6.5V 6.0V VGS=5.5V
0 0 25 50 75 100 125 150
0 0 2 4 6 8 10 12
starting Tch [C]
VDS [V]
Typical Transfer Characteristic
ID=f(VGS):80s Puls... |
| Description |
N-CHANNEL SILICON POWER MOSFET
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| File Size |
101.84K /
4 Page |
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it Online |
Download Datasheet |
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Price and Availability
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