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Toshiba Electronic Devices & Storage Corporation |
| Part No. |
TRS15N120HB
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| Description |
SiC Schottky Barrier Diode (SBD), 1200 V, 15 A, 2 in 1, TO-247
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| Tech specs |
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Official Product Page
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Toshiba Electronic Devices & Storage Corporation |
| Part No. |
TW045N120C
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| Description |
N-ch SiC MOSFET, 1200 V, 40 A, 0.059 Ω@18 V, TO-247
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| Tech specs |
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Official Product Page
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IXYS, Corp. IXYS[IXYS Corporation]
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| Part No. |
IXSX35N120AU1
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| Description |
High Voltage IGBT with Diode(VCES200V,VCE(sat)4V的高电压绝缘栅双极晶体管(带二极管 70 A, 1200 V, N-CHANNEL IGBT, TO-247
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| File Size |
86.77K /
5 Page |
View
it Online |
Download Datasheet
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Toshiba Electronic Devices & Storage Corporation |
| Part No. |
TW015N120C
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| Description |
N-ch SiC MOSFET, 1200 V, 100 A, 0.020 Ω@18 V, TO-247
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| Tech specs |
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Official Product Page
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