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For 5.6m Found Datasheets File :: 129 Search Time::1.235ms
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				SUMIDA CORP
Part No.	CDR910NP-680MC
OCR Text	... cdr910np-220m 220 22 20% 56m (45m) 4.24(5.30) 2.88(3.30) cdr910np-330m 330 33 20% 68m (54m) 3.52(4.40) 2.60(2.95) cdr910np-470m 470 47 20% 100m (80m) 2.92(3.65) 2.19(2.49) cdr910np-680m 680 68 20% 0.148 (0....
Description	1 ELEMENT, 68 uH, GENERAL PURPOSE INDUCTOR, SMD
File Size	120.86K / 2 Page	View it Online	Download Datasheet

				SUMIDA CORP
Part No.	CDH63NP330MC
OCR Text	...h63np-3r3m d 3.3 20 70m(56m) 2.20 1.70 1.80 cdh63np-3r9m e 3.9 20 92m(73m) 2.00 1.40 1.65 cdh63np-4r7m f 4.7 20 105m(84m) 1.80 1.30 1.55 cdh63np-5r6m g 5.6 20 136m(109m) 1.60 1.15 1.35 cdh63np...
Description	1 ELEMENT, 33 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR, SMD
File Size	139.25K / 2 Page	View it Online	Download Datasheet

				ShenZhen FreesCale Electronics. Co., Ltd
Part No.	AO4707
OCR Text	...? (v gs = - 10v) r ds(on) < 56m ? (v gs = - 4.5v) schottky v ds (v) = 30v, i f = 3a, v f <0.52v@3a the ao4707 uses advanced trench technology to provide excellent r ds(on) and low gate charge. a schottky diode is provided to fa...
Description	Dual P-Channel Enhancement Mode Field Effect Transistor with Schottky Diode
File Size	334.73K / 5 Page	View it Online	Download Datasheet

				ShenZhen FreesCale Electronics. Co., Ltd
Part No.	AO4709
OCR Text	...? (v gs = - 10v) r ds(on) < 56m ? (v gs = - 4.5v) schottky v ds (v) = 30v,if = 3a, vf<0.5v@1a the ao4709 uses advanced trench technology to provide excellent r ds(on) and low gate charge. a schottky diode is provided to facilita...
Description	Dual P-Channel Enhancement Mode Field Effect Transistor with Schottky Diode
File Size	344.57K / 5 Page	View it Online	Download Datasheet

				FAIRCHILD[Fairchild Semiconductor]
Part No.	HUFA76413DK8T HUFA76413D
OCR Text	56m General Description These N-Channel power MOSFETs are manufactured using the innovative UltraFET(R) process. This advanced process technology achieves the lowest possible onresistance per silicon area, resulting in outstanding perform...
Description	Discrete Commercial Dual N-Channel Logic Level UltraFET Power MOSFET, 60V, 5.1A, 0.049 Ohms @ VGS = 10V, SO-8 Package N-Channel Logic Level UltraFET Power MOSFET 60V, 4.8A, 56mз
File Size	207.51K / 11 Page	View it Online	Download Datasheet

				KEC(Korea Electronics)
Part No.	KMB6D6N30Q
OCR Text	... (typ.) @ v gs =10v : r ds(on) =56m (typ.) @ v gs =4.5v super high dense cell design. high power and current handling capability. maximum rating (ta=25 ) flp-8 (1) g h p t millimeters b2 g h l d a b1 dim p d l t 1.27 typ. 5.05+0.25/-0.20 3...
Description	N-Ch Trench MOSFET
File Size	367.31K / 5 Page	View it Online	Download Datasheet

				Diodes Incorporated
Part No.	DMC2038LVT DMC2038LVT-7 DMC2038LVTQ-7
OCR Text	...v 35m ? @ v gs = 4.5v 4.5a 56m ? @ v gs = 1.8v 3.5a q2 -20v 74m ? @ v gs = -4.5v 3.1a 168m ? @ v gs = -1.8v 2.0a description this mosfet has been designed to minimize the on-state resistance (r ds(on) ) and yet m...
Description	COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET
File Size	292.09K / 10 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	AUIRFP4409
OCR Text	...09 v dss 300v r ds(on) typ. 56m ?? max 69m ?? i d 38a parameter max. units i d @ t c = 25c continuous drain current, v gs @ 10v 38 a i d @ t c = 100c continuous drain current, v gs @ 10v 27 i dm pulse...
Description	HEXFET? Power MOSFET
File Size	376.01K / 9 Page	View it Online	Download Datasheet

				SIEMENS AG SIEMENS[Siemens Semiconductor Group]
Part No.	SMBTA06M Q62702-A3473
OCR Text	...age * Complementary type: SMBTA 56M (PNP) 4 5 3 2 1 VPW05980 Type SMBTA 06M Marking Ordering Code Pin Configuration s1G Q62702-A3473 Package 1 = B 2 = C 3 = E 4=n.c. 5 = C SCT-595 Maximum Ratings Parameter Collector-emitt...
Description	INVERTER 12V-INPUT 1200V-OUTPUT NPN硅晶体管自动对焦 NPN Silicon AF Transistor From old datasheet system
File Size	30.15K / 4 Page	View it Online	Download Datasheet

				Cystech Electonics Corp.
Part No.	MTP4411AQ8
OCR Text	...r dson @v gs =-4.5v,i d =-4.2a 56m (typ) description the mtp4411aq8 is a p-channel enhancement-mode mosfet, providing the designer with the best combination of fast switching, ruggedized device de sign, low on-resistance and cost effe...
Description	P-Channel Enhancement Mode MOSFET
File Size	256.74K / 8 Page	View it Online	Download Datasheet

For 5.6m Found Datasheets File :: 129 Search Time::1.235ms
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