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  4 banks x 2m x 16bit double da Datasheet PDF File

For 4 banks x 2m x 16bit double da Found Datasheets File :: 150+       Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | <12> | 13 | 14 | 15 |   

    KM416S1120DT-G/F7 KM416S1120DT-G/F6 KM416S1120DT-G/F10 KM416S1120DT-G/F8 KM416S1120DT-G/FC KM416S1120DT-G6

Samsung semiconductor
List of Unclassifed Manufacturers
Electronic Theatre Controls, Inc.
Part No. KM416S1120DT-G/F7 KM416S1120DT-G/F6 KM416S1120DT-G/F10 KM416S1120DT-G/F8 KM416S1120DT-G/FC KM416S1120DT-G6
Description 1M x 16 SYNCHRONOUS DRAM, 5.5 ns, PDSO50
512K x 16bit x 2 banks Synchronous DRAM LVTTL 12k × 16位2银行同步DRAM LVTTL

File Size 1,140.61K  /  43 Page

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    HY57V121620 HY57V121620LT-6 HY57V121620LT-8 HY57V121620LT-H HY57V121620LT-K HY57V121620LT-P HY57V121620LT-S HY57V121620T

HYNIx SEMICONDUCTOR INC
Electronic Theatre Controls, Inc.
STMicroelectronics N.V.
Part No. HY57V121620 HY57V121620LT-6 HY57V121620LT-8 HY57V121620LT-H HY57V121620LT-K HY57V121620LT-P HY57V121620LT-S HY57V121620T-6 HY57V121620T-8 HY57V121620T-H HY57V121620T-K HY57V121620T-P HY57V121620T-S HY57V121620LT HY57V121620T
Description 32m x 16 SYNCHRONOUS DRAM, 6 ns, PDSO54
4 banks x 8M x 16bit Synchronous DRAM
SDRAM|4x8Mx16|CMOS|TSOP|54PIN|PLASTIC 内存| 4x8Mx16 |的CMOS |的TSOP | 54PIN |塑料

File Size 157.21K  /  12 Page

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    DSK4D263238D K4D263238D K4D263238D-QC40 K4D263238D-QC50

SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Electronic
SAMSUNG[Samsung semiconductor]
Part No. DSK4D263238D K4D263238D K4D263238D-QC40 K4D263238D-QC50
Description 1M x 32Bit x 4 banks double data Rate Synchronous DRAM with Bi-directional data Strobe and DLL

File Size 236.21K  /  18 Page

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    K4D26323RA K4D26323RA-GC2A K4D26323RA-GC33 K4D26323RA-GC36 K4D26323RA-GC

SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
Part No. K4D26323RA K4D26323RA-GC2A K4D26323RA-GC33 K4D26323RA-GC36 K4D26323RA-GC
Description 1M x 32Bit x 4 banks double data Rate Synchronous RAM with Bi-directional data Strobe and DLL

File Size 300.83K  /  18 Page

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    K4D263238M K4D263238M-QC45 K4D263238M-QC50 K4D263238M-QC55 K4D263238M-QC60

Samsung Electronic
SAMSUNG[Samsung semiconductor]
Part No. K4D263238M K4D263238M-QC45 K4D263238M-QC50 K4D263238M-QC55 K4D263238M-QC60
Description 1M x 32Bit x 4 banks double data Rate Synchronous RAM with Bi-directional data Strobe and DLL

File Size 280.12K  /  19 Page

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    NANOAMP[NanoAmp Solutions, Inc.]
Part No. NT5DS4M32EG-6 NT5DS4M32EG NT5DS4M32EG-5 NT5DS4M32EG-5G
Description 1M 】 32 Bits 】 4 banks double data Rate Synchronous RAM With Bi-Directional data Strobe and DLL

File Size 781.03K  /  46 Page

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    NT5DS4M32EG-5 NT5DS4M32EG-5G NT5DS4M32EG-6

NanoAmp Solutions, Inc.
Part No. NT5DS4M32EG-5 NT5DS4M32EG-5G NT5DS4M32EG-6
Description 1M × 32 Bits × 4 banks double data Rate Synchronous RAM With Bi-Directional data Strobe and DLL

File Size 790.05K  /  46 Page

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    W9412G6JH W9412G6JH-5

Winbond
Part No. W9412G6JH W9412G6JH-5
Description 2m ?4 banks ?16 BITS DDR SDRAM
double data Rate architecture; two data transfers per clock cycle

File Size 856.09K  /  53 Page

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    K4S56163LF K4S56163LF-F1H K4S56163LF-F1L K4S56163LF-F75 K4S56163LF-G K4S56163LF-L K4S56163LF-N K4S56163LF-XE K4S56163LF-

Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
Part No. K4S56163LF K4S56163LF-F1H K4S56163LF-F1L K4S56163LF-F75 K4S56163LF-G K4S56163LF-L K4S56163LF-N K4S56163LF-xE K4S56163LF-ZC750 K4S56163LF-ZE1L0 K4S56163LF-ZN1L0
Description 16M x 16 SYNCHRONOUS DRAM, 7 ns, PBGA54
16M x 16 SYNCHRONOUS DRAM, 5.4 ns, PBGA54
4M x 16bit x 4 banks Mobile SDRAM in 54BOC 4米16 × 4银行4BOC移动SDRAM

File Size 112.21K  /  12 Page

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    W972GG6JB W972GG6JB-25

Winbond
Part No. W972GG6JB W972GG6JB-25
Description 16M ?8 banks ?16 BIT DDR2 SDRAM
double data Rate architecture: two data transfers per clock cycle

File Size 1,125.88K  /  87 Page

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For 4 banks x 2m x 16bit double da Found Datasheets File :: 150+       Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | <12> | 13 | 14 | 15 |   

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