30-mohm pdf Datasheet P12 Full Text Search --- IC-ON-LINE

30-mohm Datasheet PDF File

For 30-mohm Found Datasheets File :: 1441 Search Time::2.172ms
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				http:// POWER-ONE[Power-One]
Part No.	NDS02ZG-M6 NDS03ZA NDS03ZA-M6 NDS03ZB-M6 NDS03ZE-M6 NDS03ZD-M6
OCR Text	... 36-75 Vin Ramping Down, Io.Max 30 32 34 Vdc Turn-On Time To Output Regulation Band 350 500 ms After Remote Control 1 5 ms Rise Time 1 5 ms Input Reflected Ripple Current Vin.Max, Io.Max 50 mAp-p Input Capacitance 1.4 F 5-Nov-01 Rev 1...
Description	NDS Series: 10W / 3.0A DC/DC Converters 36-75V Input 1.5V, 1.8V, 2.5V, 3.3V and 5.0V Outputs NDS系列功率0W / 3.0A的直直流转换6 - 75V的输入为1.5V，在1.8V.5V.3V.0V输出 NDS Series: 10W / 3.0A DC/DC Converters 36-75V Input 1.5V / 1.8V / 2.5V / 3.3V and 5.0V Outputs NDS Series: 10W / 3.0A DC/DC Converters 36-75V Input 1.5V, 1.8V, 2.5V, 3.3V and 5.0V Outputs
File Size	305.92K / 14 Page	View it Online	Download Datasheet

				NXP Semiconductors N.V. PHILIPS[Philips Semiconductors]
Part No.	BUK9614-30
OCR Text	...tching applications. BUK9614-30 QUICK REFERENCE DATA SYMBOL VDS ID Ptot Tj RDS(ON) PARAMETER Drain-source voltage Drain current (DC) ...mOhm 4 VGS / V = 4.5 1000 ID / A 7514-30 40 9514-30 100 RD S (ON V )= ...
Description	TrenchMOS transistor Logic level FET 69 A, 30 V, 0.014 ohm, N-CHANNEL, Si, POWER, MOSFET
File Size	46.02K / 8 Page	View it Online	Download Datasheet

				NXP Semiconductors PHILIPS[Philips Semiconductors]
Part No.	BUK9614-55
OCR Text	... MAX. 2.0 2.3 10 500 1 10 14 30 UNIT V V V V V A uA A A V m m DYNAMIC CHARACTERISTICS Tmb = 25C unless otherwise specified SYMBOL ...mOhm Fig.8. Typical transconductance, Tj = 25 C. gfs = f(ID); conditions: VDS = 25 V BUK959-60 ...
Description	TrenchMOS transistor Logic level FET
File Size	51.52K / 8 Page	View it Online	Download Datasheet

				NXP Semiconductors Philips Semiconductors
Part No.	BUK9635-100A BUK9635-100A_1
OCR Text	...F pF ns ns ns ns nH nH VDD = 30 V; Rload =1.2; VGS = 10 V; RG = 10 Measured from upper edge of drain tab to centre of die Measured fr...mOhm 40 ID/A RDS(ON)=VDS/ID 100 tp= 35 1uS 10uS 30 VGS/V= 3.0 3.2 3.4 3.6 4.0 5.0 ...
Description	TrenchMOS? transistor Logic level FET From old datasheet system TrenchMOS transistor Logic level FET TrenchMOS(tm) transistor Logic level FET
File Size	55.58K / 7 Page	View it Online	Download Datasheet

				NXP Semiconductors PHILIPS[Philips Semiconductors]
Part No.	BUK9635-55A BUK9535-55A
OCR Text	...s ns ns ns nH nH nH nH VDD = 30 V; Rload =1.2; VGS = 5 V; RG = 10 Measured from drain lead 6 mm from package to centre of die Measure...mOhm Fig.8. Typical transfer characteristics. ID = f(VGS) ; conditions: VDS = 25 V; parameter Tj ...
Description	Product Description:Tantulum Chip Kit TrenchMOS transistor standard level FET TrenchMOS(tm) transistor Logic level FET
File Size	66.75K / 9 Page	View it Online	Download Datasheet

				NXP Semiconductors N.V. PHILIPS[Philips Semiconductors]
Part No.	BUK9635-55 BUK9635-56
OCR Text	...F pF ns ns ns ns nH nH VDD = 30 V; ID = 15 A; VGS = 5 V; RG = 10 Resistive load Measured from upper edge of drain tab to centre of die M...mOhm Fig.8. Typical transconductance, Tj = 25 C. gfs = f(ID); conditions: VDS = 25 V BUK959-60 ...
Description	TrenchMOSTM）transistor Logic level FET(TrenchMOSTM）晶体管逻辑电平FET) TrenchMOS transistor Logic level FET
File Size	68.83K / 8 Page	View it Online	Download Datasheet

				Philips
Part No.	IRFZ48N
OCR Text	... MAX. 4.0 4.4 10 500 1 20 16 30 UNIT V V V V V A A A A V m m DYNAMIC CHARACTERISTICS Tmb = 25C unless otherwise specified SYMBOL g...mOhm 30 VGS/V = 6 6.5 7 20 8 15 9 10 1000 ID / A RDS(ON) = VDS/ID 100 tp = 1 us 10 us 100 ...
Description	N-channel enhancement mode
File Size	48.53K / 8 Page	View it Online	Download Datasheet

				NXP Semiconductors PHILIPS[Philips Semiconductors]
Part No.	PHP45N03LT
OCR Text	... QUICK REFERENCE DATA VDSS = 30 V ID = 45 A g RDS(ON) 24 m (VGS = 5 V) RDS(ON) 21 m (VGS = 10 V) s GENERAL DESCRIPTION N-chann...mOhm 4 9528-30 4.5 1000 ID / A 7528-30 40 100 RD S(O = N) VD S/ ID ...
Description	TrenchMOS transistor Logic level FET
File Size	55.25K / 8 Page	View it Online	Download Datasheet

				Philips Semiconductors
Part No.	IRLZ34N
OCR Text	...e resistance VGS = 10 V MAX. 55 30 68 175 35 UNIT V A W C m PINNING - TO220AB PIN 1 2 3 tab gate drain source drain DESCRIPTION PIN C...mOhm Fig.8. Typical transconductance, Tj = 25 C. gfs = f(ID); conditions: VDS = 25 V BUK959-60 ...
Description	N-channel enhancement mode Logic level TrenchMOS transistor
File Size	47.15K / 7 Page	View it Online	Download Datasheet

				NXP Semiconductors PHILIPS[Philips Semiconductors]
Part No.	PHP87N03T
OCR Text	...tate resistance VGS = 10 V MAX. 30 75 142 175 10.5 UNIT V A W C m PINNING - TO220AB PIN 1 2 3 tab gate drain source drain DESCRIPTION ...mOhm 30 5.5 6 6.5 1000 ID / A / ID 7510-30 7510-30 100 RD S ) (ON =V ...
Description	TrenchMOS transistor Standard level FET
File Size	59.62K / 8 Page	View it Online	Download Datasheet

For 30-mohm Found Datasheets File :: 1441 Search Time::2.172ms
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