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24SH3 PCD3344A VRE304K 50120 C3001A 50120 0CLT1 F1215
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  3.4-4ghz Datasheet PDF File

For 3.4-4ghz Found Datasheets File :: 1653    Search Time::3.125ms    
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    MAXIM[Maxim Integrated Products]
Part No. MAX2402EVKIT MAX2402_1 MAX2402 MAX2402EVKIT-SO
OCR Text ... R4 R6, R7 R8 U1 W1-W4 None 1 1 3 1 2 1 1 1 1 4 1 2 2 2 1 1 4 4 DESCRIPTION 10F, 25V, 10%, tantalum capacitor 0.1F, 50V, 10% ceramic capacitor 39pF, 50V, 5% ceramic capacitors 150pF, 50V, 5% ceramic capacitor 0.01F, 50V, 10% ceramic capacit...
Description Evaluation Kit for the MAX2402

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    Maixm
Part No. MAX2402
OCR Text ... R4 R6, R7 R8 U1 W1-W4 None 1 1 3 1 2 1 1 1 4 1 2 2 2 1 1 4 4 DESCRIPTION 10F, 25V, 10%, tantalum capacitor 0.1F, 50V, 10% ceramic capacitor 39pF, 50V, 5% ceramic capacitors 150pF, 50V, 5% ceramic capacitor 0.01F, 50V, 10% ceramic capacitor...
Description MAX2402 Evaluation Kit

File Size 90.40K  /  6 Page

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    MAXIM - Dallas Semiconductor
MAXIM[Maxim Integrated Products]
Maxim Integrated Products, Inc.
Part No. MAX2430EVKIT MAX2430_1 MAX2430 MAX2430EVKIT-PWRQSOP MAX2430EVKIT-SO MAX24301
OCR Text ...e than 125mW Output Power from +3.6V Supply o Single +3V to +5.5V Supply Range, Ideal for 3-Cell NiCd or 1-Cell Lithium-Ion Battery Operatio...4) Position the J1 shunt across pins 1 and 2 to enable the MAX2430 (SHDN = high). Note that the norm...
Description Evaluation Kits
Evaluation Kit for the MAX2430

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    Conexant
Part No. PH2402
OCR Text ...z RF Transceiver. * Class 2 and 3 (1 to 10 meter range) compliant with Bluetooth Specification v1.0. * Low Voltage Supply 1.8V. * 14mA Trans...4 GHz wireless system. Using SiGe, the design has been optimized for ultra-low power applications su...
Description Bluetooth RF Transceiver
From old datasheet system

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    TQP777002

TRIQUINT[TriQuint Semiconductor]
Part No. TQP777002
OCR Text ... Output Power Detector Leadless 3.0 x 3.0 mm SMT Pb-Free Package Temperature Compensated Bias Network with Bias Shutdown Mode EVM < 3.0% @ +...4 5 N/C 6 N/C 7 N/C 8 Vdet_out 9 N/C Product Description The TQP777002 is a high performance,...
Description 2.4 GHz ISM Band InGaP HBT Matched Power Amplifier
2.4GHz ISM Band InGaP HBT Matched Power Amplifier

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    FLC157XP

Eudyna Devices Inc
Part No. FLC157XP
OCR Text ...ndition Rating 15 -5 Tc = 25C 8.3 -65 to +175 175 Unit V V W C C Fujitsu recommends the following conditions for the reliable operation o...4 6 8 10 Total Power Dissipation (W) 10 8 6 4 2 Case Temperature (C) Drain-Source Voltag...
Description GaAs FET & HEMT Chips

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    Conexant
Part No. PH2403
OCR Text ...z RF Transceiver. * Class 2 and 3 (1 to 10 meter range) compliant with Bluetooth Specification v1.0. * Low Voltage Supply 1.8V. * 14 mA Tran...4 GHz wireless system. Using SiGe, the design has been optimized for ultra-low power applications su...
Description Bluetooth RF Transceiver
From old datasheet system

File Size 41.83K  /  1 Page

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    Zarlink
Part No. SP5768
OCR Text 3.0GHz Low Phase Noise Frequency Synthesiser DS5077 ISSUE 1.4 July 2001 Features * * * * * * * * * * * Complete 3.0GHz single chip system Optimised for low phase noise, with comparison frequencies up to 4 MHz No RF prescaler Se...
Description 3.0GHz Low Phase Noise Frequency Synthesiser

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    CFH800

Infineon Technologies A...
ETC
INFINEON[Infineon Technologies AG]
Part No. CFH800
OCR Text ...assignment: 1 = gate 2 = source 3 = drain 4 = source CFH800 ________________________________________________________________________________________________________ * * * ESD: Type Marking Ordering code (taped) Packa...
Description Typical Common Source S - Parameters

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    United Monolithic Semic...
UMS[United Monolithic Semiconductors]
Part No. CHA7010-99 CHA7010-99F_00 CHA7010 CHA7010-99F/00
OCR Text ...2) Operating temperature range (3) Min 8.4 14 16 8 6 39 38 Typ 9.4 16 18 -0.035 12 12 40 39 -0.01 39 38 35 32 9 2.4 5.5 350 Max 10.4 Unit GHz dB dB dB/C dB dB dBm dBm dB/C dBm dBm % % V A V Ohm C 38 37 30 27 -30 +80 ...
Description X-band GaInP HBT High Power Amplifier

File Size 156.54K  /  7 Page

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