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ADPOW[Advanced Power Technology]
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| Part No. |
APT1201R6SVFR APT1201R6BVFR
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| OCR Text |
...-ID [Cont.], di/dt = 100A/s)
220 450 1.0 3.0 10 14
THERMAL CHARACTERISTICS
Symbol RJC RJA Characteristic Junction to Case Junction to...240V
TJ =+150C 10 5
TJ =+25C
12
VDS=600V
8
1 .5
4
50 100 150 200 250 300 Qg,... |
| Description |
MOSFET
POWER MOS V FREDFET
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| File Size |
113.48K /
4 Page |
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it Online |
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ADPOW[Advanced Power Technology]
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| Part No. |
APT150GN120J
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| OCR Text |
...L IMPEDANCE MODEL
70 120 170 220 270 IC, COLLECTOR CURRENT (A) Figure 20, Operating Frequency vs Collector Current
1
20
050-7608
Rev B
11-2005
APT150GN120J
APT100DQ120
10%
Gate Voltage TJ = 125C
td(on)
V ... |
| Description |
IGBT
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| File Size |
416.13K /
6 Page |
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it Online |
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ADPOW[Advanced Power Technology]
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| Part No. |
APT30M75SLL APT30M75BLL APT30M75BLL_03 APT30M75BLL03
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| OCR Text |
... 57 21 23 13 3 20 2 268 189 402 220 J ns
nC pF
Gate-Source Charge Gate-Drain ("Miller ") Charge Turn-on Delay Time Rise Time Turn-off De...240V
TJ =+150C TJ =+25C 10
8
4
20 30 40 50 60 70 80 Qg, TOTAL GATE CHARGE (nC) FIGURE 12... |
| Description |
POWER MOS 7 R MOSFET
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| File Size |
89.58K /
5 Page |
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it Online |
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MICROSEMI[Microsemi Corporation]
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| Part No. |
APT4M120K
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| OCR Text |
...valanche energy capability.
TO-220
APT4M120K Single die MOSFET
D G S
FEATURES
* Fast switching with low EMI/RFI * Low RDS(on) * U...240V
VDS = 600V
VDS = 960V
60 50 40 30 20 10 Qg, TOTAL GATE CHARGE (nC) Figure 7, Gate Charge... |
| Description |
N-Channel MOSFET
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| File Size |
240.23K /
4 Page |
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it Online |
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MICROSEMI[Microsemi Corporation]
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| Part No. |
APTDF500U40G
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| OCR Text |
...50 120 260
Unit
ns
210 220 50 120 3 15.6 19 19 1200 1800
ns A C V
A/s
Thermal and package characteristics
Symbol Characteristic RthJC Junction to Case Thermal Resistance RMS Isolation Voltage, any terminal to case VISOL t... |
| Description |
Single diode Power Module
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| File Size |
182.66K /
3 Page |
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it Online |
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MICROSEMI[Microsemi Corporation]
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| Part No. |
APTGF200U120DG
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| OCR Text |
... 180 IC , Collector Current (A) 220
Hard switching ZCS ZVS
Reverse Bias Safe Operating Area 450 I C, Collector Current (A) 400 350 300 250 200 150 100 50 0 0 400 800 1200 V CE, Collector to Emitter Voltage (V)
VCE = 600V D = 50% RG =... |
| Description |
Single Switch with Series diodes NPT IGBT Power Module
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| File Size |
263.80K /
6 Page |
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it Online |
Download Datasheet |
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