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  2170 Datasheet PDF File

For 2170 Found Datasheets File :: 1556    Search Time::2.375ms    
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    MD7IC2250GNR1 MD7IC2250NBR1 MD7IC2250NR1

Freescale Semiconductor, Inc
Part No. MD7IC2250GNR1 MD7IC2250NBR1 MD7IC2250NR1
OCR Text ...-48.3 2140 mhz 31.1 16.8 --49.3 2170 mhz 31.1 16.8 --50.1 ? capable of handling 10:1 vswr, @ 32 vdc, 2140 mhz, 63 watts cw output power (3 db input overdrive from rated p out ) ? typical p out @ 1 db compression point ? 54 watts cw features...
Description RF LDMOS Wideband Integrated Power Amplifiers

File Size 704.90K  /  22 Page

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    B7649

EPCOS
Part No. B7649
OCR Text ...2155.0 mhz 43 47 db 2155.0 ... 2170.0 mhz 45 50 db 2400.0 ... 2500.0 mhz 25 32 db 2500.0 ... 3840.0 mhz 20 26 db 3840.0 ... 3960.0 mhz 25 41 db 5760.0 ... 6000.0 mhz 10 20 db 4 october 12, 2007 b7649 1950 / 2140 mhz please read caut...
Description SAW Components

File Size 112.62K  /  11 Page

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    MRF6S20010N MRF6S20010NR1 MRF6S20010GNR1

Freescale Semiconductor, Inc
MOTOROLA
Part No. MRF6S20010N MRF6S20010NR1 MRF6S20010GNR1
OCR Text ...ypical Two - Tone Performance @ 2170 MHz: VDD = 28 Volts, IDQ = 130 mA, Pout = 10 Watts PEP Power Gain -- 15.5 dB Drain Efficiency -- 36% IMD -- - 34 dBc * Typical 2 - Carrier W - CDMA Performance: VDD = 28 Volts, IDQ = 130 mA, Pout = 1 Wat...
Description RF Power Field Effect Transistors
The MRF6S20010NR1 and MRF6S20010GNR1 are designed for Class A or Class AB general purpose applications

File Size 572.02K  /  24 Page

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    B39162B9102J810 B91022

EPCOS
Part No. B39162B9102J810 B91022
OCR Text ...on attenuation a max 2110.0 ... 2170.0 mhz CC 1.3 1.6 db vswr (ant port) 2110.0 ... 2170.0 mhz CC 2.0 2.3 (wcdma port) 2110.0... 2170.0 mhz CC 1.7 2.0 4 november 27, 2009 b9102 859 / 1575.42 / 1810 / 1920 / 2140 mhz please read cautions ...
Description CELL/GPS/(K-PCS,PCS,WCDMA) Triplexer

File Size 181.19K  /  12 Page

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    PTF10048

Ericsson Microelectronics
ERICSSON[Ericsson]
Part No. PTF10048
OCR Text ... VDD = 28 V IDQ = 425 mA f = 2170 MHz Output Pow er 25 A-1 100 234 569 48 940 15 0 0 1 2 3 4 5 Input Power (Watts) Package 20237 RF Specifications Characteristic (100% Tested) Symbol Gps P-1dB ...
Description 30 Watts, 2.1.2 GHz, W-CDMA GOLDMOS Field Effect Transistor
30 Watts/ 2.1-2.2 GHz/ W-CDMA GOLDMOS Field Effect Transistor
30 Watts, 2.1-2.2 GHz, W-CDMA GOLDMOS Field Effect Transistor

File Size 232.19K  /  6 Page

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    PTF211301 PTF211301A

Infineon Technologies AG
Part No. PTF211301 PTF211301A
OCR Text 2170 MHz Description The PTF211301 is a 130-W, internally matched GOLDMOS FET intended for WCDMA applications. It is characaterized for single- and two-carrier WCDMA operation from 2110 to 2170 MHz. Full gold metallization ensures excelle...
Description LDMOS RF POWER FIELD EFFECT TRANSISTOR 130 W, 2110-2170 MHZ
LDMOS RF Power Field Effect Transistor 130 W/ 2110-2170 MHz

File Size 444.92K  /  9 Page

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    SF2140BA02540S

Spectrum Microwave, Inc.
API Technologies Corp
Part No. SF2140BA02540S
OCR Text ... mhz insertion loss (2110 to 2170 mhz) 2.4 3.5 db amplitude ripple (2110 to 2170 mhz) 1.0 1.8 db p p attenuation (1920 to 1980 mhz) 2 25 33 db attenuation (2205 to 2265 mhz) 2 10 35 db attenuation (2300 to 2...
Description 2140 MHz SAW Filter 60 MHz bandwidth

File Size 155.13K  /  3 Page

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    MW4IC001MR4 MW4IC001MR406

Freescale Semiconductor, Inc
MOTOROLA
Part No. MW4IC001MR4 MW4IC001MR406
OCR Text ...makes it usable from 800 MHz to 2170 MHz. The linearity performances cover all modulations for cellular applications: GSM EDGE, TDMA, CDMA and W - CDMA. * Typical CW Performance at 2170 MHz, 28 Volts, IDQ = 12 mA Output Power -- 900 mW PEP ...
Description RF LDMOS Wideband Integrated Power Amplifier
800??170 MHz, 900 mW, 28 V W??DMA RF LDMOS Wideband Integrated Power Amplifier

File Size 602.46K  /  16 Page

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    MOTOROLA
Part No. MW4IC001NR4
OCR Text ...makes it usable from 800 MHz to 2170 MHz. The linearity performances cover all modulations for cellular applications: GSM EDGE, TDMA, CDMA and W - CDMA. * Typical CW Performance at 2170 MHz, 28 Volts, IDQ = 12 mA Output Power -- 900 mW PEP ...
Description 800鈥?170 MHz, 900 mW, 28 V W鈥揅DMA RF LDMOS Wideband Integrated Power Amplifier

File Size 601.03K  /  16 Page

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    PTMA210452EL PTMA210452FL

Infineon Technologies AG
Part No. PTMA210452EL PTMA210452FL
OCR Text ...? = 2110 mhz ? = 2140 mhz ? = 2170 mhz cw performance v dd = 28 v, i dq1 = 200 ma, i dq2 = 400 ma 10 15 20 25 30 35 40 30 32 34 36 38 40 42 44 46 48 output power (dbm) gain (db) 0 10 20 30 40 50 60 gain efficiency ? = 2110 mhz ? = 2...
Description Wideband RF LDMOS Integrated Power Amplifier 45 W, 1900 ?2200 MHz

File Size 377.68K  /  11 Page

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