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2110.0 Datasheet PDF File

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				SONY
Part No.	CXG1177UR
OCR Text	..., 830 to 885mhz 1920 to 1980mhz 2110 to 2170mhz rf4 ? rf2, 830 to 885mhz 1920 to 1980mhz 2110 to 2170mhz rf5 ? rf2, 830 to 885mhz 1920 to 1980mhz 2110 to 2170mhz rf5 ? rf3, 830 to 885mhz 1920 to 1980mhz 2110 to 2170mhz rf4 ? rf1, 830 to 885...
Description	Hight Frequency Switch
File Size	38.14K / 4 Page	View it Online	Download Datasheet

				SONY
Part No.	CXG1171UR
OCR Text	...tion rf1 ? rf2, 1920 to 1980mhz 2110 to 2170mhz rf1 ? rf3, 1920 to 1980mhz 2110 to 2170mhz rf1 ? rf4, 1920 to 1980mhz 2110 to 2170mhz rf1 ? ...0/2.85v control, v dd = 2.85v, 1920 to 1980mhz ? 5 ? cxg1171ur sony corporation package outline ...
Description	Hight Frequency Switch
File Size	43.03K / 5 Page	View it Online	Download Datasheet

				TriQuint Semiconductor, Inc.
Part No.	AP502
OCR Text	...nformation product features ? 2110 ? 2170 mhz ? 30 db gain ? +36 dbm p1db ? -55 dbc aclr @ 25 dbm wcdma linear power ? +12 v ...0 ? , 50 ? unmatched fixture parameter units min typ max operational bandwidth mhz 2110 ? 217...
Description
File Size	849.49K / 5 Page	View it Online	Download Datasheet

				Maxim Integrated Products
Part No.	MAX2668EYT MAX2666EYT
OCR Text	... frequency range bands 1, 4, 10 2110 2140 2170 mhz gain hg mode 10 14.5 17.5 db mg mode, gain_ = 10 0 5 8.5 lg mode, gain_ = 01 -15.5 -12 -9 noise figure hg mode 1.1 db mg mode, gain_ = 10 3 lg mode, gain_ = 01 12 input 3rd-order intercept ...
Description
File Size	737.44K / 9 Page	View it Online	Download Datasheet

				Freescale Semiconductor, Inc
Part No.	MRF7S21170HR3 MRF7S21170HR311 MRF7S21170HSR3
OCR Text	...lications with frequencies from 2110 to 2170 mhz. suitable for cdma and multicarrier amplifier applications. to be used in class ab and clas...0.01% probability on ccdf. power gain ? 16 db drain efficiency ? 31% device output signal par ? 6. 1...
Description	RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs
File Size	795.91K / 17 Page	View it Online	Download Datasheet

				Freescale Semiconductor, Inc
Part No.	MRF5P21240HR6
OCR Text	...lications with frequencies from 2110 to 2170 mhz. suitable for tdma, cdma and multicarrier amplifier applications. to be used in class ab fo...0.01% probability on ccdf. power gain ? 13 db drain efficiency ? 24% im3 @ 10 mhz offset ? - 36 db...
Description	RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET
File Size	557.75K / 12 Page	View it Online	Download Datasheet

				Freescale Semiconductor, Inc MOTOROLA
Part No.	MRF6S20010N MRF6S20010NR1 MRF6S20010GNR1
OCR Text	...GNR1) Test Circuit Schematic -- 2110 - 2170 MHz Table 6. MRF6S20010NR1(GNR1) Test Circuit Component Designations and Values -- 2110 - 217...0.1 1 Pout, OUTPUT POWER (WATTS) PEP 10 30 IMD, THIRD ORDER INTERMODULATION DISTORTION (dBc) IDQ = 1...
Description	RF Power Field Effect Transistors The MRF6S20010NR1 and MRF6S20010GNR1 are designed for Class A or Class AB general purpose applications
File Size	572.02K / 24 Page	View it Online	Download Datasheet

				Infineon Technologies AG
Part No.	PTMA210152M
OCR Text	... = 80 ma, i dq2 = 160 ma, ? = 2110 ? 2170 mhz, p out = 7 w average characteristic p out conditions symbol min typ max unit gain g ps ? ...0 5 10 15 20 return loss (db) gain return loss data sheet 2 of 15 rev. 04, 2010-04-16 ptma210152m...
Description	Wideband RF LDMOS Integrated Power Amplifier 15 W, 1800 ?2200 MHz
File Size	241.96K / 15 Page	View it Online	Download Datasheet

				Infineon Technologies AG
Part No.	PTF211301 PTF211301A
OCR Text	2110-2170 MHz Description The PTF211301 is a 130-W, internally matched GOLDMOS FET intended for WCDMA applications. It is characaterized f...0.01% CCDF Characteristic Intermodulation Distortion Gain Drain Efficiency Symbol IMD Gps ...
Description	LDMOS RF POWER FIELD EFFECT TRANSISTOR 130 W, 2110-2170 MHZ LDMOS RF Power Field Effect Transistor 130 W/ 2110-2170 MHz
File Size	444.92K / 9 Page	View it Online	Download Datasheet

				Infineon Technologies AG
Part No.	PTFA211801E PTFA211801F
OCR Text	...wo-carrier wcdma operation from 2110 to 2170 mhz. thermally-enhanced packaging provides the coolest operation available. ptfa211801e package...0 5 10 15 20 25 30 drain efficiency (%) acpr efficiency im3 rf characteristics wcdma measurements ...
Description	Thermally-Enhanced High Power RF LDMOS FETs 180 W, 2110 ?2170 MHz
File Size	260.08K / 11 Page	View it Online	Download Datasheet

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