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    CZT32C CZT31C

Central Semiconductor Corp
Part No. CZT32C CZT31C
OCR Text 2.0W COMPLEMENTARY SILICON POWER TRANSISTOR POWER TM 223 The CENTRAL SEMICONDUCTOR CZT31C and CZT32C types are surface mount epoxy molded complementary silicon transistors manufactured by the epitaxial base process, designed for...
Description 2.0W COMPLEMENTARY SILICON POWER TRANSISTOR

File Size 99.01K  /  2 Page

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    DZB24C DZB30C DZB9.1C DZB10C DZB11C DZB12C DZB13C DZB15C DZB16C DZB18C DZB20C DZB22C DZB27C DZB6.2U DZB6.8C DZB62 DZB7.5

Sanyo Electric Co., Ltd.
Sanyo Electric Co.,Ltd.
SANYO[Sanyo Semicon Device]
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Part No. DZB24C DZB30C DZB9.1C DZB10C DZB11C DZB12C DZB13C DZB15C DZB16C DZB18C DZB20C DZB22C DZB27C DZB6.2U DZB6.8C DZB62 DZB7.5C DZB8.2C
OCR Text 2 to DZB30 Sillicon Diffused Junction Type 1.0W Zener Diodes Features * Plastic molded structure. * Voltage regulator use. * Power dissipation:P=1.0W. * Zener voltage:VZ=6.2 to 30V Package Dimensions unit:mm 1083 [DZB6.2 to DZB30...
Description    1.0W Zener Diodes
surface mount silicon Zener diodes 表面贴装硅稳压二极管
Ceramic Multilayer Capacitor; Capacitor Type:Mil PRF; Capacitance:0.1uF; Capacitance Tolerance: /- 10%; Voltage Rating:50VDC; Capacitor Dielectric Material:Multilayer Ceramic; Package/Case:1812; Termination:SMD RoHS Compliant: No

File Size 38.72K  /  2 Page

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    IR51H214

IRF[International Rectifier]
Part No. IR51H214
OCR Text ...n) PD (TA = 25 C) 250V 50% 1.2s 2.0 2.0W Output Power MOSFETs in half-bridge configuration 250V Rated Breakdown Voltage High side gate drive designed for bootstrap operation Accurate timing control for both Power MOSFETs Matched delay t...
Description    SELF-OSCILLATING HALF-BRIDGE

File Size 144.15K  /  6 Page

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    IR51H224

International Rectifier
Part No. IR51H224
OCR Text ... (TA = 25 C) 250V 50% 1.2s 1.1 2.0W Output Power MOSFETs in half-bridge configuration 250V Rated Breakdown Voltage High side gate drive designed for bootstrap operation Accurate timing control for both Power MOSFETs Matched delay to get...
Description SELF-OSCILLATING HALF-BRIDGE

File Size 146.82K  /  6 Page

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    IR51H310

IRF[International Rectifier]
Part No. IR51H310
OCR Text ... (TA = 25 C) 400V 50% 1.2s 3.6 2.0W Output Power MOSFETs in half-bridge configuration 400V Rated Breakdown Voltage High side gate drive designed for bootstrap operation Accurate timing control for both Power MOSFETs Matched delay to get...
Description GT 7C 7#16S PIN PLUG
SELF-OSCILLATING HALF-BRIDGE

File Size 146.39K  /  6 Page

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    IR51H320

IRF[International Rectifier]
Part No. IR51H320
OCR Text ... (TA = 25 C) 400V 50% 1.2s 1.8 2.0W Output Power MOSFETs in half-bridge configuration 400V Rated Breakdown Voltage High side gate drive designed for bootstrap operation Accurate timing control for both Power MOSFETs Matched delay to get...
Description SELF-OSCILLATING HALF-BRIDGE

File Size 146.36K  /  6 Page

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    IR51H420

IRF[International Rectifier]
Part No. IR51H420
OCR Text ... (TA = 25 C) 500V 50% 1.2s 3.0 2.0W Output Power MOSFETs in half-bridge configuration 500V Rated Breakdown Voltage High side gate drive designed for bootstrap operation Accurate timing control for both Power MOSFETs Matched delay to get...
Description SELF-OSCILLATING HALF-BRIDGE

File Size 146.94K  /  6 Page

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    IR51H737

IRF[International Rectifier]
Part No. IR51H737
OCR Text ...(TA = 25 C) 300V 50% 1.2s 0.75 2.0W Output Power MOSFETs in half-bridge configuration 300V Rated Breakdown Voltage High side gate drive designed for bootstrap operation Accurate timing control for both Power MOSFETs Matched delay to get...
Description SELF-OSCILLATING HALF-BRIDGE

File Size 146.94K  /  6 Page

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    IR51HD214

IRF[International Rectifier]
Part No. IR51HD214
OCR Text ...n) PD (TA = 25 C) 250V 50% 1.2s 2.0 2.0W Output Power MOSFETs in half-bridge configuration 250V Rated Breakdown Voltage High side gate drive designed for bootstrap operation Bootstrap diode integrated into package Accurate timing contro...
Description SELF-OSCILLATING HALF-BRIDGE

File Size 147.23K  /  6 Page

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    IR51HD224

IRF[International Rectifier]
Part No. IR51HD224
OCR Text ... (TA = 25 C) 250V 50% 1.2s 1.1 2.0W Output Power MOSFETs in half-bridge configuration 250V Rated Breakdown Voltage High side gate drive designed for bootstrap operation Bootstrap diode integrated into package Accurate timing control for...
Description SELF-OSCILLATING HALF-BRIDGE

File Size 146.82K  /  6 Page

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