| |
|
 |
Infineon
|
| Part No. |
SPB80N06S2L-06
|
| OCR Text |
...te-source leakage current v gs =20v, v ds =0v i gss - 1 100 na drain-source on-state resistance v gs =4.5v, i d =69a r ds(on) - 6.6 8.4 m...06 spb80n06s2l-06 preliminary data electrical characteristics , at t j = 25 c, unless otherwise sp... |
| Description |
N-Channel OptiMOS Power Transistor
|
| File Size |
516.02K /
8 Page |
 View
it Online |
Download Datasheet
|
| |
|
|
NXP Semiconductors N.V.
|
| Part No. |
BAP64-06
|
| OCR Text |
...rrent v r = 175 v ? 10 ? a v r =20v ? 1 ? a c d diode capacitance f = 1 mhz v r = 0 0.52 ? pf v r =1v 0.37 ? pf v r = 20 v 0.23 0.35 pf r d ...06 graphical data handbook, halfpage 10 2 10 1 10 ?1 mcd777 10 ?1 1 i f (ma) r d () 10 10 2 fig.2 f... |
| Description |
Silicon PIN diode BAP64-06<SOT23 (SOT23)|<<http://www.nxp.com/packages/SOT23.html<1<week 34, 2003,;
|
| File Size |
61.40K /
8 Page |
View
it Online |
Download Datasheet |
| |
|
|
INFINEON[Infineon Technologies AG]
|
| Part No. |
SPP80N03S2L-06 SPB80N03S2L-06 SPI80N03S2L-06
|
| OCR Text |
...te-source leakage current
V GS=20V, VDS=0V
Drain-source on-state resistance
V GS=4.5V, I D=80A V GS=4.5V, I D=80A, SMD version
Drain...06 SPP80N03S2L-06,SPB80N03S2L-06
Electrical Characteristics Parameter Dynamic Characteristics Tra... |
| Description |
OptiMOS Power-Transistor 的OptiMOS功率晶体
Low Voltage MOSFETs - OptiMOS Power MOSFET, 30V, D2PAk, RDSon = 5.9mOhm, 80A, LL
Low Voltage MOSFETs - OptiMOS Power MOSFET, 30V, TO-220, RDSon = 6.2mOhm, 80A, LL
|
| File Size |
415.22K /
8 Page |
View
it Online |
Download Datasheet |
| |
|
|
Infineon Technologies A...
INFINEON[Infineon Technologies AG]
|
| Part No. |
SPP80N06S2L-06 SPB80N06S2L-06
|
| OCR Text |
...te-source leakage current
V GS=20V, VDS=0V
Drain-source on-state resistance
V GS=4.5V, I D=69A
Drain-source on-state resistance
V G...06 SPB80N06S2L-06
Electrical Characteristics Parameter Dynamic Characteristics Transconductance Inp... |
| Description |
Low Voltage MOSFETs - TO220/263; 80 A; 55V; LL; 6.3 mOhm
OptiMOS Power-Transistor 的OptiMOS功率晶体
|
| File Size |
309.50K /
8 Page |
View
it Online |
Download Datasheet |
| |
|
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| Part No. |
FS5ASH-06
|
| OCR Text |
... = 10V
16
TC = 125C
3.0
20V 40V
12
75C 25C
2.0
8
1.0
4
0
0
2
4
6
8
10
0
0
0.4
0.8
1.2
1.6
2.0
GATE CHARGE Qg (nC)
SOURCE-DRAIN VOLTAGE VSD (V)
DRAIN-SOURCE ON-STATE ... |
| Description |
ER 19C 19#16 PIN RECP LINE RoHS Compliant: No
HIGH-SPEED SWITCHING USE
|
| File Size |
37.31K /
4 Page |
View
it Online |
Download Datasheet |
|
Price and Availability
|
