200a 800v pdf Datasheet P12 Full Text Search --- IC-ON-LINE


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200a 800v Datasheet PDF File

For 200a 800v Found Datasheets File :: 602 Search Time::1.828ms
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				Fairchild Semiconductor
Part No.	FQA13N8007 FQA13N80F109
OCR Text	...g TJ = 25C 3. ISD 12.6A, di/dt 200a/s, VDD BVDSS, Starting TJ = 25C 4. Pulse Test : Pulse width 300s, Duty cycle 2% 5. Essentially indep...800v N-Channel MOSFET Typical Performance Characteristics Figure 1. On-Region Characteristics V...
Description	800v N-Channel MOSFET
File Size	830.05K / 8 Page	View it Online	Download Datasheet

				Fairchild Semiconductor
Part No.	FQA7N80C FQA7N80C07 FQA7N80CF109
OCR Text	...ing TJ = 25C 3. ISD 8.4A, di/dt 200a/s, VDD BVDSS, Starting TJ = 25C 4. Pulse Test : Pulse width 300s, Duty cycle 2% 5. Essentially indep...800v N-Channel MOSFET Typical Performance Characteristics Figure 1. On-Region Characteristics V...
Description	800v N-Channel MOSFET
File Size	795.07K / 8 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	G4PH50UD
OCR Text	...nC TJ = 25C See Fig. 16 di/dt = 200a/s 1838 TJ = 125C -- A/s TJ = 25C See Fig. -- TJ = 125C 17 2 www.irf.com IRG4PH50UD 30 25 F ...800v 4.20 IC = 48 A 10 IC = 24 A IC = 12 A 3.80 3.40 3.00 0 10 20 30 40 50 ...
Description	Search --To IRG4PH50UD
File Size	263.88K / 10 Page	View it Online	Download Datasheet

				Infineon Technologies Corporation
Part No.	SGP15N120
OCR Text	...IT COLLECTOR CURRENT 300A 250A 200a 150A 100A 50A 15V 0A 10V 30s tsc, SHORT CIRCUIT WITHSTAND TIME 20s 10s 0s 10V 11V 12V 13V 14V 12V 14V 16V 18V 20V VGE, GATE-EMITTER VOLTAGE Figure 19. Short c...
Description	Fast S-igbt in Npt-technology
File Size	490.07K / 12 Page	View it Online	Download Datasheet

				Fairchild Semiconductor
Part No.	FQA8N80C07 FQA8N80CF109 FQA8N80C-F109
OCR Text	...ng TJ = 25C 3. ISD 8.4A, di/dt 200a/s, VDD BVDSS, Starting TJ = 25C 4. Pulse Test : Pulse width 300s, Duty cycle 2% 5. Essentially indep...800v N-Channel MOSFET Typical Performance Characteristics Figure 1. On-Region Characteristics V...
Description	800v N-Channel MOSFET
File Size	789.60K / 8 Page	View it Online	Download Datasheet

				Fairchild Semiconductor
Part No.	FQA10N80C FQA10N80C07 FQA10N80CF109 FQA10N80C-F109
OCR Text	...g TJ = 25C 3. ISD 10.0A, di/dt 200a/s, VDD BVDSS, Starting TJ = 25C 4. Pulse Test : Pulse width 300s, Duty cycle 2% 5. Essentially indep...800v N-Channel MOSFET Typical Performance Characteristics Figure 1. On-Region Characteristics V...
Description	800v N-Channel MOSFET
File Size	803.12K / 8 Page	View it Online	Download Datasheet

				Unisonic Technologies
Part No.	8N80
OCR Text	...ing TJ = 25C 3. ISD 8A, di/dt 200a/s, VDD BVDSS, Starting TJ = 25C 4. Absolute maximum ratings are those values beyond which the device c...800v, VGS=0V 10 Drain-Source Leakage Current IDSS A VDS=640V, TC=125C 100 Gate- Source Leakage Curre...
Description	800v N-CHANNEL MOSFET
File Size	203.16K / 5 Page	View it Online	Download Datasheet

				FAIRCHILD[Fairchild Semiconductor]
Part No.	FQA7N8006 FQA7N80_F109 FQA7N80 FQA7N80F109
OCR Text	...ng TJ = 25C 3. ISD 6.6A, di/dt 200a/s, VDD BVDSS, Starting TJ = 25C 4. Pulse Test : Pulse width 300s, Duty cycle 2% 5. Essentially indep...800v N-Channel MOSFET Typical Performance Characteristics Figure 1. On-Region Characteristics V...
Description	800v N-Channel MOSFET
File Size	763.06K / 9 Page	View it Online	Download Datasheet

				Fairchild Semiconductor
Part No.	FQA10N8007 FQA10N80F109 FQA10N80-F109
OCR Text	...ng TJ = 25C 3. ISD 9.8A, di/dt 200a/s, VDD BVDSS, Starting TJ = 25C 4. Pulse Test : Pulse width 300s, Duty cycle 2% 5. Essentially indep...800v N-Channel MOSFET Typical Performance Characteristics Figure 1. On-Region Characteristics V...
Description	800v N-Channel MOSFET
File Size	800.07K / 8 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRG4PH50KDPBF IRG4PH50KDPBF-15
OCR Text	... Fig. 1838 TJ = 125C 16 di/dt = 200a/s -- A/s TJ = 25C See Fig. -- TJ = 125C 17 2 www.irf.com IRG4PH50KDPbF 30 F o r b o th : ...800v 960V V GE = 15V TJ = 25 C I C = 24A 100 5.0 RG = Ohm VGE = 15V 800v VCC = 960V IC ...
Description	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE 45 A, 1200 V, N-CHANNEL IGBT, TO-247AC
File Size	673.46K / 11 Page	View it Online	Download Datasheet

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