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				Panasonic Corporation Panasonic Semiconductor
Part No.	AN8837SB
OCR Text	...p-p], VCC = 3 V 1.87 0.4 193 mV Note) *: The values mentioned above are subject to change according to the state of a printed circuit board, a socket, etc. 5 AN8837SB ICs for Compact Disc/CD-ROM Player s Electrical ...
Description	Low power consumption CD-DA head amplifier IC for 3-beam system optical pick-up
File Size	68.71K / 7 Page	View it Online	Download Datasheet

				Panasonic Corporation PANASONIC[Panasonic Semiconductor]
Part No.	AN8839 AN8839NSB
OCR Text	...p-p], VCC = 3 V 1.87 0.4 193 mV 125 9.2 12.9 12.9 mV times k k VOP-ENV VCC = 3 V, f = 800 kHz, AM modulation 130 mV[p-p] 10 10 8 mV mV mV Note) *: The values mentioned above are subject to change according to ...
Description	DIODE ZENER TRIPLE ISOLATED 200mW 20Vz 6.2mA-Izt 0.05 0.1uA-Ir 15 SOT-363 3K/REEL CD-DA head amplifier IC for 3-beam system optical pick-up
File Size	62.80K / 7 Page	View it Online	Download Datasheet

				ADPOW[Advanced Power Technology]
Part No.	APT5010JFLL
OCR Text	...4.3 (.169) H=4.8 (.187) H=4.9 (.193) (4 places) 11.8 (.463) 12.2 (.480) 8.9 (.350) 9.6 (.378) Hex Nut M4 (4 places) r = 4.0 (.157) (2 places) 4.0 (.157) 4.2 (.165) (2 places) 25.2 (0.992) 0.75 (.030) 12.6 (.496) 25.4 (1.000) 0.85 (...
Description	Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS
File Size	53.49K / 2 Page	View it Online	Download Datasheet

				Advanced Power Technology Ltd.
Part No.	APT5010JLC
OCR Text	...4.3 (.169) H=4.8 (.187) H=4.9 (.193) (4 places) 11.8 (.463) 12.2 (.480) 8.9 (.350) 9.6 (.378) Hex Nut M4 (4 places) r = 4.0 (.157) (2 places) 4.0 (.157) 4.2 (.165) (2 places) 25.2 (0.992) 0.75 (.030) 12.6 (.496) 25.4 (1.000) 0.85 (...
Description	POWER MOS VI 500V 44A 0.100 Ohm Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs.
File Size	34.93K / 2 Page	View it Online	Download Datasheet

				ADPOW[Advanced Power Technology]
Part No.	APT5010JLL
OCR Text	...4.3 (.169) H=4.8 (.187) H=4.9 (.193) (4 places) 11.8 (.463) 12.2 (.480) 8.9 (.350) 9.6 (.378) Hex Nut M4 (4 places) r = 4.0 (.157) (2 places) 4.0 (.157) 4.2 (.165) (2 places) 25.2 (0.992) 0.75 (.030) 12.6 (.496) 25.4 (1.000) 0.85 (...
Description	Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS
File Size	51.35K / 2 Page	View it Online	Download Datasheet

				Advanced Power Technolo... ADPOW[Advanced Power Technology] Advanced Power Technology, Ltd.
Part No.	APT5010JN APT5012JN APT5012
OCR Text	...4.3 (.169) H=4.8 (.187) H=4.9 (.193) (4 places) 8.9 (.350) 9.6 (.378) Hex Nut M4 (4 places) r = 4.0 (.157) (2 places) 4.0 (.157) 4.2 (.165) (2 places) 25.2 (0.992) 0.75 (.030) 12.6 (.496) 25.4 (1.000) 0.85 (.033) 12.8 (.504) 3.3...
Description	POWER MOS IV 500V 48.0A 0.10 Ohm / 500V 43.0A 0.12 Ohm N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS N沟道增强型高压功率MOSFET
File Size	60.42K / 4 Page	View it Online	Download Datasheet

				ADPOW[Advanced Power Technology]
Part No.	APT5010JVFR
OCR Text	...4.3 (.169) H=4.8 (.187) H=4.9 (.193) (4 places) 11.8 (.463) 12.2 (.480) 8.9 (.350) 9.6 (.378) Hex Nut M4 (4 places) r = 4.0 (.157) (2 places) 4.0 (.157) 4.2 (.165) (2 places) 25.2 (0.992) 0.75 (.030) 12.6 (.496) 25.4 (1.000) 0.85 (...
Description	POWER MOS V 500V 44A 0.100 Ohm Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
File Size	73.63K / 4 Page	View it Online	Download Datasheet

				Advanced Power Technolo... Advanced Power Technology, Ltd.
Part No.	APT5010JVR
OCR Text	...4.3 (.169) H=4.8 (.187) H=4.9 (.193) (4 places) 11.8 (.463) 12.2 (.480) 8.9 (.350) 9.6 (.378) Hex Nut M4 (4 places) r = 4.0 (.157) (2 places) 4.0 (.157) 4.2 (.165) (2 places) 25.2 (0.992) 0.75 (.030) 12.6 (.496) 25.4 (1.000) 0.85 (...
Description	POWER MOS V 500V 44A 0.100 Ohm Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. ECONOLINE: REC3-S_DRW(Z)/H* - 3W DIP Package- 1kVDC Isolation- Wide Input 2:1 & 4:1- Regulated Output- 100% Burned In- UL94V-0 Package Material- Continuous Short Circiut Protection- Efficiency to 80% 电源MOS V是一个高电压N新一代通道增强型功率MOSFET
File Size	71.26K / 4 Page	View it Online	Download Datasheet

				ADPOW[Advanced Power Technology]
Part No.	APT50GF120JRD
OCR Text	...4.3 (.169) H=4.8 (.187) H=4.9 (.193) (4 places) 11.8 (.463) 12.2 (.480) 8.9 (.350) 9.6 (.378) Hex Nut M4 (4 places) r = 4.0 (.157) (2 places) 4.0 (.157) 4.2 (.165) (2 places) 25.2 (0.992) 0.75 (.030) 12.6 (.496) 25.4 (1.000) 0.8...
Description	Fast IGBT & FRED 1200V 75A The Fast IGBT is a new generation of high voltage power IGBTs. The Fast IGBT⑩ is a new generation of high voltage power IGBTs.
File Size	51.80K / 4 Page	View it Online	Download Datasheet

				ADPOW[Advanced Power Technology]
Part No.	APT50M38JFLL
OCR Text	...4.3 (.169) H=4.8 (.187) H=4.9 (.193) (4 places) 11.8 (.463) 12.2 (.480) 8.9 (.350) 9.6 (.378) Hex Nut M4 (4 places) r = 4.0 (.157) (2 places) 4.0 (.157) 4.2 (.165) (2 places) 25.2 (0.992) 0.75 (.030) 12.6 (.496) 25.4 (1.000) 0.85 (...
Description	Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
File Size	53.39K / 2 Page	View it Online	Download Datasheet

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