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40004 KBU8D CLAMP LA1140 P1240 TYN10 DMC16 MAX4517
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  175c Datasheet PDF File

For 175c Found Datasheets File :: 15912    Search Time::1.484ms    
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    IRFU3607PBF

International Rectifier
Part No. IRFU3607PBF
OCR Text ...dt 1920A/s, VDD V(BR)DSS, TJ 175c. Pulse width 400s; duty cycle 2%. Coss eff. (TR) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS. Coss eff. (ER) is a fixed capacitance th...
Description HEXFET Power MOSFET

File Size 367.00K  /  10 Page

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    IRLZ34NPBF

International Rectifier
Part No. IRLZ34NPBF
OCR Text 175c Operating Temperature Fast Switching Fully Avalanche Rated Lead-Free HEXFET(R) Power MOSFET D IRLZ34NPbF VDSS = 55V G S RDS(on) = 0.035 ID = 30A Description Fifth Generation HEXFETs from International Rectifier utiliz...
Description HEXFET Power MOSFET

File Size 223.97K  /  9 Page

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    AS3524 AS3528 AS3524ANDAS3528

GE Security, Inc.
GE[General Semiconductor]
Part No. AS3524 AS3528 AS3524ANDAS3528
OCR Text ...tion Low leakage current at TJ=175c Low forward voltage drop Ideally suited for alternator rectification and load dump protection High temperature soldering guaranteed: 260C for 10 seconds at terminals 0.197(5.0) 0.185(4.7) 0.205(...
Description AVALANCHE ALTERNATOR RECTIFIER
PASSIVATED ANISOTROPIC RECTIFIER TECHNOLOGY

File Size 114.36K  /  2 Page

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    AON6482

Alpha & Omega Semiconductors
Alpha & Omega Semicondu...
Part No. AON6482
OCR Text ...and the maximu m temperature of 175c may be used if the pcb allow s it. b. the power dissipation p d is based on t j(max) =175c, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for case...
Description 100V N-Channel MOSFET

File Size 242.13K  /  6 Page

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    15ETH03PBF

International Rectifier, Corp.
Part No. 15ETH03PBF
OCR Text ...oltage Drop Low Leakage Current 175c Operating Junction Temperature Lead-Free ("PbF" suffix) trr = 40ns IF(AV) = 15Amp VR = 300V Description/ Applications International Rectifier's 300V series are the state of the art Ultrafast recove...
Description Ultrafast Rectifier 超高速整流器

File Size 212.31K  /  7 Page

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    IRF6720S2TR1PBF IRF6720S2TRPBF

International Rectifier
Part No. IRF6720S2TR1PBF IRF6720S2TRPBF
OCR Text ... = 25C 60s PULSE WIDTH Tj = 175c 2.5V 1 10 100 0.1 1 10 100 VDS, Drain-to-Source Voltage (V) V DS, Drain-to-Source Voltage (V) Fig 4. Typical Output Characteristics 100 VDS = 15V 60s PULSE WIDTH Fig 5. Typ...
Description DirectFET TM Power MOSFET

File Size 230.09K  /  10 Page

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Part No. IRLU9343-701
OCR Text ...nal features of this mosfet are 175c operating junction temperature and repetitive avalanche capability. these features combine to make this mosfet a highly efficient, robust and reliable device for class-d audio amplifier applications. ...
Description 20 A, 55 V, 0.105 ohm, P-CHANNEL, Si, POWER, MOSFET

File Size 248.72K  /  11 Page

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    IHW20N65R5

Infineon Technologies AG
Part No. IHW20N65R5
OCR Text ...ckage ihw20n65r5 650v 20a 1.35v 175c h20er5 pg-to247-3 g c e g c e 3 ihw20n65r5 resonantswitchingseries rev.2.1,2014-09-12 tableofcontents description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...
Description high power thyristor diode

File Size 2,024.06K  /  15 Page

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    IHW20N135R3

Infineon Technologies AG
Part No. IHW20N135R3
OCR Text ...kage ihw20n135r3 1350v 20a 1.6v 175c h20r1353 pg-to247-3 g c e g c e 3 ihw20n135r3 ih-series rev.2.1,2011-05-03 tableofcontents description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ....
Description high power thyristor diode

File Size 2,205.02K  /  15 Page

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    IRFB4110QPBF

International Rectifier
Part No. IRFB4110QPBF
OCR Text ...de dV/dt and dI/dt Capability l 175c Operating Temperature l Automotive [Q101] Qualified HEXFET(R) Power MOSFET VDSS RDS(on) typ. max ID D 100V 3.7m: 4.5m: 180A D G G D S S TO-220AB G D S Gate Drain ...
Description HEXFET Power MOSFET

File Size 303.59K  /  8 Page

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