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ELPIDA MEMORY INC
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| Part No. |
EBJ21UE8BAU0-AE-F
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| OCR Text |
... -8c 0 1 1 1 1 0 0 0 78h 15ns 17 sdram write recovery time (twr) 0 1 1 1 1 0 0 0 78h 15ns 18 sdram minimum /ras to /cas delay (trcd) -dj, -ae 0 1 1 0 1 0 0 1 69h 13.125ns -8c 0 1 1 1 1 0 0 0 78h 15ns 19 sdra... |
| Description |
256M X 64 DDR DRAM MODULE, ZMA204
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| File Size |
192.68K /
18 Page |
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it Online |
Download Datasheet
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| Part No. |
K4E151611D-JL50 K4E151612D-TL50
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| OCR Text |
...3ns 69ns 16ns 5v/3.3v -5 0 50ns 15ns 84ns 20ns 5v/3.3v -6 0 60ns 17ns 104ns 25ns 5v/3.3v ? active power dissipation speed 3.3v 5v 4k 1k 4k 1k -45 360 540 550 825 ... |
| Description |
1M X 16 EDO DRAM, 50 ns, PDSO42
1M X 16 EDO DRAM, 50 ns, PDSO44
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| File Size |
404.63K /
35 Page |
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it Online |
Download Datasheet |
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HYNIX SEMICONDUCTOR INC
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| Part No. |
HY57V641620FLTP-7
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| OCR Text |
...de idd2p cke vil(max), tck = 15ns 2 ma idd2ps cke vil(max), tck = 2ma precharge standby cur- rent in non power down mode idd2n cke vih(min), cs vih(min), tck = 15ns input signals are changed one time during 2clks. all oth... |
| Description |
4M X 16 SYNCHRONOUS DRAM, 5.4 ns, PDSO54
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| File Size |
131.39K /
13 Page |
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it Online |
Download Datasheet |
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Price and Availability
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