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Microsemi, Corp.
Microsemi Corporation
MICROSEMI POWER PRODUCTS GROUP
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| Part No. |
APT14F100S APT14F100B09
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| OCR Text |
...min typ max 1000 1.15 0.82 0.98 2.5 4 5 -10 250 1000 100 min typ max 14 56 1...81 (.780) 20.32 (.800) 20.80 (.819) 21.46 (.845) 1.65 (.065) 2.13 (.084) 1.01 (.040) 1.40 (.055) 3.5... |
| Description |
Power FREDFET; Package: D3 [S]; ID (A): 14; RDS(on) (Ohms): 0.98; BVDSS (V): 1000; 14 A, 1000 V, 0.98 ohm, N-CHANNEL, Si, POWER, MOSFET
N-Channel FREDFET
14 A, 1000 V, 0.98 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD
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| File Size |
274.39K /
4 Page |
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Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
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| Part No. |
MGF0921A
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| OCR Text |
...torage temperature
Ratings
-15 -15 1800 -5.0 15 10 175 -65 to +175
Unit
V V mA mA mA W C C
Electrical characteristics
Symbol
ID...81 13.62 13.45 13.81 14.36 14.88 15.23 15.31 15.10 14.57 13.75 12.62 11.18 9.40 7.23 4.59 1.36 -2.57... |
| Description |
LnS Band GaAs FET
L & S BAND GaAs FET
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| File Size |
427.43K /
24 Page |
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it Online |
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MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
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| Part No. |
MGF0918A 0918A
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| OCR Text |
...ebreakdown voltage
Ratings
-15 -15 400 -1.2 5.0 3 175 -65 to +175
Unit
V V mA mA mA W C C
VGDO Gate to drain breakdown voltage ID...81.77 -90.08 -97.23 -103.61 -109.26 -114.47 -119.16 -123.61 -127.67 -131.51 -135.04 -138.46 -141.69 ... |
| Description |
From old datasheet system
L & S BAND GaAs FET [ SMD non - matched ]
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| File Size |
85.91K /
3 Page |
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it Online |
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Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
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| Part No. |
MGF0917A
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| OCR Text |
...torage temperature
Ratings
-15 -15 200 -0.6 2.5 2 175 -65 to +175
Unit
V V mA mA mA W C C
Electrical characteristics
Symbol
IDS...81 -80.66 -91.42 -100.60 -108.60 -115.73 -122.21 -128.21 -133.86 -139.27 -144.52 -149.72 -155.02 -16... |
| Description |
L & S BAND GaAs FET [ SMD non matched ]
L & S BAND GaAs FET [ SMD non - matched ]
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| File Size |
43.54K /
4 Page |
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it Online |
Download Datasheet |
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MITSUBISHI[Mitsubishi Electric Semiconductor]
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| Part No. |
MGF0915A
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| OCR Text |
...ebreakdown voltage
Ratings
-15 -15 3000 -10 21 18.7 175 -65 to +175
Unit
V V mA mA mA W C C
VGDO Gate to drain breakdown voltage ...81.74 -102.24 -125.67 (mag) 0.721 0.717 0.719 0.725 0.732 0.739 0.745 0.749 0.751 0.751 0.749 0.745 ... |
| Description |
L & S BAND GaAs FET[ SMD non - matched ]
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| File Size |
1,309.44K /
48 Page |
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MITSUBISHI[Mitsubishi Electric Semiconductor]
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| Part No. |
MGF0915A_03 MGF0915A MGF0915A03
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| OCR Text |
...torage temperature
Ratings
-15 -15 3000 -10 21 18.7 175 -65 to +175
Unit
V V mA mA mA W C C
Electrical characteristics
Symbol
I...81 24.04 18.15 12.14 6.01 -0.28 -6.80 -13.66 -20.98 -28.93 -37.70 -47.48 -58.48 -70.88 -84.83 -100.4... |
| Description |
L & S BAND GaAs FET
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| File Size |
42.10K /
3 Page |
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Sensitron Semiconductor
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| Part No. |
SHD218413A SHD239503
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| OCR Text |
...rce gate device type pin(s) 1 & 15~28 pins 5~11 pins 2, 3, 13, 14 mosfet - lcc-28t source drain gate note: ceramic seals and glidcop a lead...81 3.56) dia. 1 2 3 .260 .249 (6.60 6.32) .050 .040 (1.27 1.02) .150(3.81) bsc .545 ... |
| Description |
POWER MOSFETS 50 A, 30 V, 0.012 ohm, N-CHANNEL, Si, POWER, MOSFET
POWER MOSFETS 30 A, 200 V, 0.085 ohm, N-CHANNEL, Si, POWER, MOSFET
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| File Size |
67.87K /
6 Page |
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it Online |
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Price and Availability
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