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  0.50a Datasheet PDF File

For 0.50a Found Datasheets File :: 13459    Search Time::2.375ms    
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    2SJ548

HITACHI[Hitachi Semiconductor]
Part No. 2SJ548
OCR Text ... * Low on-resistance R DS(on) = 0.075 typ. * Low drive current. * 4V gate drive devices. * High speed switching. Outline TO-220FM D ...50A/s Test Conditions I D = -10mA, VGS = 0 I G = 100A, VDS = 0 VDS = -60 V, VGS = 0 VGS = 16V, VDS =...
Description Silicon P-Channel MOS FET
Silicon P Channel MOS FET High Speed Power Switching

File Size 51.21K  /  9 Page

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    2SJ549 2SJ549L 2SJ549S

HITACHI[Hitachi Semiconductor]
Hitachi,Ltd.
Part No. 2SJ549 2SJ549L 2SJ549S
OCR Text ... * Low on-resistance R DS(on) = 0.11 typ. * Low drive current * 4 V gete drive devices * High speed switching Outline LDPAK 4 4 D 1...50A/s Test Conditions I D = -10mA, VGS = 0 I G = 100A, VDS = 0 VDS = -60 V, VGS = 0 VGS = 16V, VDS =...
Description Power switching MOSFET
Silicon P Channel MOS FET High Speed Power Switching 硅P通道MOS FET的高速电源开

File Size 54.89K  /  9 Page

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    2SJ550 2SJ550L 2SJ550S

HITACHI[Hitachi Semiconductor]
http://
Part No. 2SJ550 2SJ550L 2SJ550S
OCR Text ... * Low on-resistance R DS(on) = 0.075 typ. * Low drive current. * 4V gate drive devices. * High speed switching. Outline LDPAK 4 4 D...50A/s Test Conditions I D = -10mA, VGS = 0 I G = 100A, VDS = 0 VDS = -60 V, VGS = 0 VGS = 16V, VDS =...
Description Power switching MOSFET
Silicon P Channel MOS FET High Speed Power Switching

File Size 55.48K  /  9 Page

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    2SJ551 2SJ551L 2SJ551S

HITACHI[Hitachi Semiconductor]
Part No. 2SJ551 2SJ551L 2SJ551S
OCR Text ... * Low on-resistance R DS(on) = 0.050 typ. * Low drive current. * 4V gate drive devices. * High speed switching. Outline LDPAK 4 4 D...50A/s Test Conditions I D = -10mA, VGS = 0 I G = 100A, VDS = 0 VDS = -60 V, VGS = 0 VGS = 16V, VDS =...
Description Silicon P Channel MOS FET High Speed Power Switching

File Size 54.47K  /  9 Page

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    2SJ552 2SJ552L 2SJ552S 2SJ552L/S

HITACHI[Hitachi Semiconductor]
Part No. 2SJ552 2SJ552L 2SJ552S 2SJ552L/S
OCR Text ... * Low on-resistance R DS(on) = 0.042 typ. * Low drive current. * 4V gate drive devices. * High speed switching. Outline LDPAK 4 D 1 G ...50A/s Test Conditions I D = -10mA, VGS = 0 I G = 100A, VDS = 0 VDS = -60 V, VGS = 0 VGS = 16V, VDS =...
Description Silicon P-Channel MOS FET
Silicon P Channel MOS FET High Speed Power Switching
Power switching MOSFET

File Size 55.15K  /  9 Page

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    2SJ553 2SJ553L 2SJ553S

HITACHI[Hitachi Semiconductor]
Part No. 2SJ553 2SJ553L 2SJ553S
OCR Text ... * Low on-resistance R DS(on) = 0.028 typ. * Low drive current. * 4V gate drive devices. * High speed switching. Outline LDPAK 4 D 1 G ...50A/s Test Conditions I D = -10mA, VGS = 0 I G = 100A, VDS = 0 VDS = -60 V, VGS = 0 VGS = 16V, VDS =...
Description Power switching MOSFET
Silicon P Channel MOS FET High Speed Power Switching

File Size 55.75K  /  9 Page

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    2SJ554

HITACHI[Hitachi Semiconductor]
Part No. 2SJ554
OCR Text ... * Low on-resistance R DS(on) = 0.028 typ. * Low drive current. * 4V gate drive devices. * High speed switching. Outline TO-3P D G...50A/s Test Conditions I D = -10mA, VGS = 0 I G = 100A, VDS = 0 VDS = -60 V, VGS = 0 VGS = 16V, VDS =...
Description Silicon P Channel MOS FET High Speed Power Switching

File Size 53.62K  /  9 Page

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    2SJ555

Hitachi,Ltd.
HITACHI[Hitachi Semiconductor]
Part No. 2SJ555
OCR Text ... * Low on-resistance R DS(on) = 0.017 typ. * Low drive current. * 4V gate drive devices. * High speed switching. Outline TO-3P D G...50A/s Test Conditions I D = -10mA, VGS = 0 I G = 100A, VDS = 0 VDS = -60 V, VGS = 0 VGS = 16V, VDS =...
Description Silicon P Channel MOS FET High Speed Power Switching

File Size 52.90K  /  9 Page

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    2SK3027

PANASONIC[Panasonic Semiconductor]
Part No. 2SK3027
OCR Text ....10.2 8.00.2 Solder Dip 13.7-0.2 q Contactless relay q Diving circuit for a solenoid q Driving circuit for a motor q Control equipment...50A, 1 pulse s Electrical Characteristics (TC = 25C) Parameter Drain to Source cut-off current G...
Description Silicon N-Channel Power F-MOS FET

File Size 23.49K  /  1 Page

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    2SK3028 2SK3028TENTATIVE

Panasonic Corporation
PANASONIC[Panasonic Semiconductor]
Part No. 2SK3028 2SK3028TENTATIVE
OCR Text ...m 15.50.5 4.5 3.20.1 10.0 3.00.3 26.50.5 18.60.5 q Contactless relay q Diving circuit for a solenoid q Driving circuit f...50A VGS = 10V, RL = 0.6 Conditions VDS = 50V, VGS = 0 VGS = 20V, VDS = 0 ID = 1mA, VGS = 0 VDS = 10V...
Description Silicon N-Channel Power F-MOS FET

File Size 24.42K  /  1 Page

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