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  0.26a Datasheet PDF File

For 0.26a Found Datasheets File :: 895    Search Time::6.297ms    
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    Mitsumi
Part No. MM1491
OCR Text ...-25 ~ 75C, B:Ta=-20 ~ 70C, C:Ta=0 ~ 50C, D:Ta=0 ~ 40C, E:Ta=-20 ~ 25C Overcharge detection voltage temperature conditions Overcharge detect...26A AN BN GN HN JN MN SN WN YN ZN Overcharge detection voltage (V) MM1491 4.2000.025 4.3500...
Description Lithium Ion Battery Protection (for 1-cell in series)
From old datasheet system

File Size 231.42K  /  11 Page

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    IRHN7250-15

International Rectifier
Part No. IRHN7250-15
OCR Text ...recovery dv/dt 5.0 v/ns t j operating junction -55 to150 t stg storage temperature range c package mounting surfa...26a jansr2n7269u irhn3250 300k rads (si) 0.1 ? 26a jansf2n7269u irhn4250 500k rads (si) ...
Description Simple Drive Requirements

File Size 347.13K  /  12 Page

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    SSD40N10-30D

SeCoS Halbleitertechnologie GmbH
Part No. SSD40N10-30D
OCR Text ...stance junction-case r jc 3.0 c / w notes 1. surface mounted on 1 x 1 fr4 board. 2. pulse width limited by maximum junction ...26a, 100v, r ds(on) 36m n-ch enhancement mode power mosfet elektronische bauelemente 04-may...
Description N-Ch Enhancement Mode Power MOSFET

File Size 763.56K  /  4 Page

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    CEP62A3 CEB62A3

CET[Chino-Excel Technology]
Part No. CEP62A3 CEB62A3
OCR Text ..., TSTG Limit 30 20 60 180 60 68 0.45 -55 to 175 Unit V V A A A W W/ C C THERMAL CHARACTERISTICS Thermal Resistance, Junction-to-Case The...26A VGS = 4.5V, ID = 21A VGS = 10V, VDS = 5V VDS = 10V, ID = 26A Min Typ Max Unit 30 1 V A 100 n...
Description N-Channel Logic Level Enhancement Mode Field Effect Transistor

File Size 49.72K  /  5 Page

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    Commonwealth Industrial, Corp.
Part No. APT13GP120B
OCR Text ... max. lead temp. for soldering: 0.063" from case for 10 sec. power mos 7 ? igbt to-247 g c e g c e 050-7412 rev b 7-2002 apt13gp120...26a i c= 6.5a i c= 13a i c= 26a 01 2 3 4 5 6 7 8 910 01 2 3 4 5 6 7 8910 0 1 2 3 4 5 6 7 8 9 10 0...
Description Volts:1200V VF/Vce(ON):3.6V ID(cont):13Amps|Ultrafast IGBT Family 电压200伏室的Vceon):3.6V的身份证(续):一三安培|超快IGBT的家

File Size 80.49K  /  6 Page

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    Commonwealth Industrial, Corp.
Part No. APT13GP120K
OCR Text ... max. lead temp. for soldering: 0.063" from case for 10 sec. power mos 7 ? igbt g c e 050-7415 rev - 8-2002 apt13gp120k dynamic cha...26a i c= 6.5a i c= 13a i c= 26a 01 2 3 4 5 6 7 8 910 01 2 3 4 5 6 7 8910 0 1 2 3 4 5 6 7 8 9 10 0...
Description Volts:1200V VF/Vce(ON):3.6V ID(cont):13Amps|Ultrafast IGBT Family 电压200伏室的Vceon):3.6V的身份证(续):一三安培|超快IGBT的家

File Size 80.25K  /  6 Page

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    Renesas Electronics, Corp.
Part No. M30260F8TGP-U7 M30260F3TGP-U7 M30260F4TGP-U7 M30260F6TGP-U7 M30260F3TGP-D3
OCR Text 0.40 2004.07.30 rev.0.40 2004.07.30 page 1 of 24 rej03b0071-0040z 1. overview the m16c/26a group (m16c/26a, m16c/26t) of single-chip microcomputers is built using the high-perfor- mance silicon gate cmos process using a m16c/60 series...
Description 16-BIT, FLASH, 20 MHz, MICROCONTROLLER, PQFP48 7 X 7 MM, 0.50 MM PITCH, LEAD FREE, PLASTIC, LQFP-48

File Size 179.03K  /  26 Page

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    IRF[International Rectifier]
Part No. IRHMJ8250 IRHMJ3250 IRHMJ4250 IRHMJ7250
OCR Text ...ds (Si) 1000K Rads (Si) RDS(on) 0.10 0.10 0.10 0.10 ID 26A 26A 26A 26A TO-254AA Tabless International Rectifier's RADHard HEXFET(R) technology provides high performance power MOSFETs for space applications. This technology has over a ...
Description RADIATION HARDENED POWER MOSFET SURFACE MOUNT (TO-254AA Tabless)

File Size 327.23K  /  12 Page

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