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  0.18a Datasheet PDF File

For 0.18a Found Datasheets File :: 3138    Search Time::10.343ms    
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    UDN2595A 2595 A2595SLW UDN2595 A2595 A2595ELW

Allegro MicroSystems, Inc.
AllegroMicroSystems
ALLEGRO[Allegro MicroSystems]
Part No. UDN2595A 2595 A2595SLW UDN2595 A2595 A2595ELW
OCR Text ...N WATTS 2.5 A2595SLW 2.0 1 2 20 19 18 17 16 15 14 13 12 NC NC 11 GROUND NO CONNECT. SUFFIX 'A', R JA = 60C/W 3 4 5 1...18A in Dimensions in Millimeters (for reference only) 18 10 0.355 0.204 10.92 7.11 6.10 MAX ...
Description 8-CHANNEL SATURATED SINK DRIVER 8通道接收器驱动饱
8-CHANNEL SATURATED SINK DRIVERS
8-CHANNELSATURATEDSINKDRIVER

File Size 131.30K  /  8 Page

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    2SK2255 2SK2255-01MR

FUJI[Fuji Electric]
Part No. 2SK2255 2SK2255-01MR
OCR Text ...f N-channel MOS-FET 250V 0,18 18A 50W > Outline Drawing > Applications Switching Regulators UPS DC-DC converters General Purpose Power Amplifier > Maximum Ratings and Characteristics - Absolute Maximum Ratings (TC=25...
Description N-channel MOS-FET

File Size 167.21K  /  2 Page

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    HUFA76419P3 HUFA76419S3S HUFA76419S3ST

FAIRCHILD SEMICONDUCTOR CORP
FAIRCHILD[Fairchild Semiconductor]
Part No. HUFA76419P3 HUFA76419S3S HUFA76419S3ST
OCR Text 0.040 Ohm, N-Channel, Logic Level UltraFET(R) Power MOSFETs Packaging JEDEC TO-220AB SOURCE DRAIN GATE GATE SOURCE DRAIN (FLANGE) JEDEC...18A, VGS = 4.5V (Figure 9) THERMAL SPECIFICATIONS Thermal Resistance Junction to Case Thermal Resist...
Description 29 A, 60 V, 0.04 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
27A, 60V, 0.040 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs
27A, 60V, 0.040 Ohm, N-Channel, Logic Level UltraFETPower MOSFETs

File Size 212.40K  /  10 Page

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    IR2105 IR2105S

IRF[International Rectifier]
Part No. IR2105 IR2105S
OCR Text ...ad DIP) (8 Lead SOIC) Min. -0.3 VB - 25 VS - 0.3 -0.3 -0.3 -0.3 -- -- -- -- -- -- -55 -- Max. 625 VB + 0.3 VB + 0.3 25 VCC + 0.3 VCC...18A. Vcc Supply Current vs Temperature Figure 18B. Vcc Supply Current vs Voltage 10 www.irf...
Description Half Bridge Driver, Single Input, All High Voltage Pins On one Side, Fixed 520ns Deadtime in a 8-lead SOIC package
Half Bridge Driver, Single Input, All High Voltage Pins On one Side, Fixed 520ns Deadtime in a 8-pin DIP package
High Voltage, High Speed Power MOSFET and IGBT Driver

File Size 133.63K  /  12 Page

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    2SK3207

Toshiba Semiconductor
HITACHI[Hitachi Semiconductor]
Part No. 2SK3207
OCR Text ... Item Symbol Min 150 20 -- -- 1.0 -- -- 11 -- -- -- -- -- -- -- -- -- Typ -- -- -- -- -- 70 85 18 1100 350 170 15 110 270 130 0.9 150 Max --...18A, VGS = 0 I F = 18A, VGS = 0 diF/ dt = 50A/s Test Conditions I D = 10mA, VGS = 0 I G = 100A, VDS ...
Description Silicon N Channel MOS FET High Speed Power Switching

File Size 26.36K  /  5 Page

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    FR207P FR201 FR202 FR203 FR204 FR205 FR206 FR207

Leshan Radio Company, Ltd.
LRC[Leshan Radio Company]
Part No. FR207P FR201 FR202 FR203 FR204 FR205 FR206 FR207
OCR Text ...100 200 400 600 800 1000 1000 2.0 75 70 5.0 2.0 1.3 150 150 150 150 250 500 500 250 DO - 15 Trr I F = 0.5A, I R = 1.0A, I RR = 0.25A ...18A-1/2 LESHAN RADIO COMPANY, LTD. FR201 - FR207P 2A RATING & CHARACTERISTIC CURVES OF 2A FAST...
Description 2A FAST RECOVERY DIODES 甲快速恢复二极管

File Size 48.56K  /  2 Page

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    FS3KM-18A FS3VS-14A

MITSUBISHI[Mitsubishi Electric Semiconductor]
Powerex Power Semiconductors
Part No. FS3KM-18A FS3VS-14A
OCR Text 0.3 6.5 0.3 3 0.3 Dimensions in mm 2.8 0.2 15 0.3 3.2 0.2 14 0.5 3.6 0.3 1.1 0.2 1.1 0.2 0.75 0.15 0.75 0....18A HIGH-SPEED SWITCHING USE ELECTRICAL CHARACTERISTICS Symbol V (BR) DSS V (BR) GSS IGSS IDSS ...
Description Nch POWER MOSFET HIGH-SPEED SWITCHING USE

File Size 45.85K  /  4 Page

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    IRFR1111 IRFR3303 IRFU3303 U3303 IRFU330 IRFR3303TR IRFR3303TRL IRFR3303TRR IRFR3303PBF IRFU3303PBF

IRF[International Rectifier]
Part No. IRFR1111 IRFR3303 IRFU3303 U3303 IRFU330 IRFR3303TR IRFR3303TRL IRFR3303TRR IRFR3303PBF IRFU3303PBF
OCR Text ...ed D VDSS = 30V RDS(on) = 0.031 G ID = 33A S Description Fifth Generation HEXFETs from International Rectifier utilize adva...18A 4.0 V VDS = VGS, I D = 250A --- S VDS = 25V, ID = 18A 25 VDS = 30V, VGS = 0V A 250 VDS = 24V, V...
Description Power MOSFET(Vdss=30V, Rds(on)=0.031ohm, Id=33A?
30V Single N-Channel HEXFET Power MOSFET in a I-Pak package
30V Single N-Channel HEXFET Power MOSFET in a D-Pak package
Power MOSFET(Vdss=30V, Rds(on)=0.031ohm, Id=33A?)
Power MOSFET(Vdss=30V, Rds(on)=0.031ohm, Id=33A)
Power MOSFET(Vdss=30V/ Rds(on)=0.031ohm/ Id=33A)

File Size 106.40K  /  10 Page

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    JANSR2N7407 FN4636

INTERSIL[Intersil Corporation]
Part No. JANSR2N7407 FN4636
OCR Text ...eatures * 18A, 250V, rDS(ON) = 0.170 * Total Dose - Meets Pre-RAD Specifications to 100K RAD (Si) * Single Event - Safe Operating Area Curve for Single Event Effects - SEE Immunity for LET of 36MeV/mg/cm2 with VDS up to 80% of Rated Breakd...
Description Formerly Available As FSF254R4/ Radiation Hardened/ SEGR Resistant/ N-Channel Power MOSFETs
Formerly Available As FSF254R4, Radiation Hardened, SEGR Resistant, N-Channel Power MOSFETs
From old datasheet system

File Size 54.70K  /  8 Page

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    MAP80-4004 MAP80-4002 MAP80-1024 MAP80-1012 MAP80 MAP80-1005 MAP80-4000 MAP80-4001 MAP80-4003

POWER-ONE[Power-One]
Part No. MAP80-4004 MAP80-4002 MAP80-1024 MAP80-1012 MAP80 MAP80-1005 MAP80-4000 MAP80-4001 MAP80-4003
OCR Text ...A (Note 2) 4.6/3.9A (Note 2) 0.2% 0.2% 0.1% 1% 1% 0.5% 1.4% 1% 0.5% 5.0V to 5.1V 11.76V to 12.15V 23.8V to 24.2V NOTES: 1) Maximum peak to peak noise expressed as a percentage of output voltage, 20MHz bandwidth. 2) MAP80-1012...
Description Wide Range Input for 110/220 VAC Applications

File Size 163.87K  /  4 Page

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