0.17a pdf Datasheet P12 Full Text Search --- IC-ON-LINE


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0.17a Datasheet PDF File

For 0.17a Found Datasheets File :: 1380 Search Time::1.359ms
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				International Rectifier
Part No.	IRFZ24NL
OCR Text	...ed D VDSS = 55V RDS(on) = 0.07 G ID = 17A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, com...
Description	Power MOSFET(Vdss=55V, Rds(on)=0.07ohm, Id=17A)
File Size	134.53K / 10 Page	View it Online	Download Datasheet

				International Rectifier, Corp.
Part No.	IRG4PC30FD
OCR Text	...120 20 100 42 -55 to +150 300 (0.063 in. (1.6mm) from case) 10 lbfin (1.1 Nm) Units V A V W C Thermal Resistance Paramet...17A VGE = 15V IC = 31A See Fig. 2, 5 IC = 17A, TJ = 150C VCE = VGE, IC = 250A VCE = VGE, IC = 250A V...
Description	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.59V, @Vge=15V, Ic=17A) 绝缘栅双极型晶体管，超快软恢复二极管（VCES和\u003d 600V电压的Vce（on）典\u003d 1.59V，@和VGE \u003d 15V的，集成电路\u003d 17A条） 600V Fast 1-8 kHz Copack IGBT in a TO-247AC package
File Size	209.00K / 10 Page	View it Online	Download Datasheet

				Vishay Intertechnology, Inc. International Rectifier
Part No.	IRG4PC30 IRG4PC30F IRG4PC30F-EPBF IRG4PC30FPBF
OCR Text	... 20 10 100 42 -55 to + 150 300 (0.063 in. (1.6mm from case ) 10 lbfin (1.1Nm) Units V A V mJ W C Thermal Resistance Paramete...17A -- IC = 31A See Fig.2, 5 V -- IC = 17A , TJ = 150C 6.0 VCE = VGE, IC = 250A -- mV/C VCE = VGE, I...
Description	INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.59V, @Vge=15V, Ic=17A) 31 A, 600 V, N-CHANNEL IGBT, TO-247AD TO-247AD, 3 PIN 600V Fast 1-8 kHz Discrete IGBT in a TO-247AC package
File Size	143.46K / 8 Page	View it Online	Download Datasheet

				IXYS[IXYS Corporation]
Part No.	IXGH17N100AU1 IXGH17N100U1
OCR Text	...5 34 A 34 A VCE(sat) 3.5 V 4.0 V Combi Packs Symbol VCES VCGR VGES VGEM IC25 IC90 ICM SSOA (RBSOA) PC TJ TJM Tstg Md Weight Test...17A VCE - Volts 6 5 4 3 2 1 0 5 6 7 8 9 10 11 12 13 14 15 IC = 34A IC = 17A IC = 8.5A -50 ...
Description	Low VCE(sat) IGBT with Diode High speed IGBT with Diode
File Size	110.86K / 6 Page	View it Online	Download Datasheet

				MAXIM - Dallas Semiconductor
Part No.	MAX1545EVKIT MAX1544EVKIT
OCR Text	0; 04/03 MAX1544/MAX1545 Evaluation Kits MAX1544/MAX1545 ________________________________________________________General _______________...17A Each Phase) 300kHz Switching Frequency MAX6509 Temperature Sensor 40-Pin Thin QFN Package (MAX15...
Description	Evaluation Kits for the MAX1544/MAX1545
File Size	1,164.68K / 20 Page	View it Online	Download Datasheet

				STMicroelectronics N.V. ST Microelectronics STMICROELECTRONICS[STMicroelectronics]
Part No.	T1235-600G 5575 -T1235-600G
OCR Text	...AX MIN MIN Sensitivity 2 35 1.3 0.2 35 50 80 1.5 5 2 500 6.5 V A mA V/s A/ms V V mA mA Unit mA IGM = 4 A (tp = 20 s) * For either polarity of electrode A2 voltage with reference to electrode A1. ORDERING INFORMATION Add "-TR" suffi...
Description	BOX ALUM UNPAINTED 8X6X3.5,1 高性能可控 HIGH PERFORMANCE TRIAC From old datasheet system
File Size	65.71K / 5 Page	View it Online	Download Datasheet

				Fairchild Semiconductor
Part No.	NDP508A NDP508AE
OCR Text	...res 19 and 17A, 80V. RDS(ON) = 0.08 and 0.10. Critical DC electrical parameters specified at elevated temperature. Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor. 175C maximum jun...
Description	N-Channel Enhancement Mode Field Effect Transistor
File Size	54.49K / 6 Page	View it Online	Download Datasheet

For 0.17a Found Datasheets File :: 1380 Search Time::1.359ms
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