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  w channel Datasheet PDF File

For w channel Found Datasheets File :: 94584    Search Time::6.875ms    
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    HAT2042T

Renesas Electronics Corporation
Part No. HAT2042T
OCR Text ...- 55 to + 150 Unit V V A A A w w C C 1. Pw 10 s, duty cycle 1% 2. 1 Drive operation ; when using the glass epoxy board (FR4 40 x 40 ...channel Dissipation Drain Current Op Pw er at ion (P 1 m s = 1.0 1 0.3 0...
Description Silicon N channel Power MOS FET High Speed Power Switching

File Size 168.26K  /  11 Page

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    HAT2165H05 HAT2165H-EL-E

Renesas Electronics Corporation
Part No. HAT2165H05 HAT2165H-EL-E
OCR Text ... to +150 Unit V V A A A A mJ w C/w C C Rev.6.00 Sep 20, 2005 page 1 of 7 HAT2165H Electrical Characteristics (Ta = 25C) Ite...channel Dissipation 10 20 Drain Current 1m Pw s DC = 1 Op 0 m era s tio n 10 1 Ope...
Description Silicon N channel Power MOS FET Power Switching

File Size 84.16K  /  8 Page

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    HAT2165N08 HAT2165N-EL-E

Renesas Electronics Corporation
Part No. HAT2165N08 HAT2165N-EL-E
OCR Text ...-55 to +150 Unit V V A A A A mJ w C/w C C REJ03G1680-0300 Rev.3.00 May 27, 2008 Page 1 of 6 HAT2165N Electrical Characteristics ...channel Dissipation Pch (w) Drain Current ID (A) 30 Pw Op 10 =1 1m 0m n s ...
Description Silicon N channel Power MOS FET Power Switching

File Size 114.53K  /  7 Page

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    PSMN034-100BS-15

NXP Semiconductors
Part No. PSMN034-100BS-15
OCR Text ...ing base see figure 4 -0.91.7k/w r th(j-a) thermal resistance from junction to ambient minimum footprint; mounted on a printed circuit bo...channel 100 v 34.5 m ? standard level mosfet in d2pak. 6. characteristics table 6. characteristic...
Description N-channel 100 V 34.5 mΩ standard level MOSFET in D2PAK

File Size 213.58K  /  14 Page

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    IRF4905L IRF4905S IRF4B905L IRF4905STRL IRF4905STRL-111 IRF4905STRR

International Rectifier, Corp.
Part No. IRF4905L IRF4905S IRF4B905L IRF4905STRL IRF4905STRL-111 IRF4905STRR
OCR Text ... (1.6mm from case ) Units A w w w/C V mJ A mJ V/ns C Thermal Resistance Parameter RJC RJA Junction-to-Case Junction-to-Ambient ( PC...channel Driver Gate Drive P.w. Period D= P.w. Period [VGS=10V ] *** D.U.T. ISD waveform Re...
Description Power MOSFET(Vdss=-55V, Rds(on)=0.02ohm, Id=-74A) 功率MOSFET(减振钢板基本\u003d- 55V的,的Rds(on)\u003d 0.02ohm,身份证\u003d- 74A条)
Power MOSFET(Vdss=-55V/ Rds(on)=0.02ohm/ Id=-74A)
-55V Single P-channel HEXFET Power MOSFET in a D2-Pak package
-55V Single P-channel HEXFET Power MOSFET in a TO-262 package

File Size 159.46K  /  10 Page

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    IRF4905 IRF4B905 IRF4905PBF

International Rectifier, Corp.
Part No. IRF4905 IRF4B905 IRF4905PBF
OCR Text ... 10 lbf*in (1.1N*m) Units A w w/C V mJ A mJ V/ns C Thermal Resistance Parameter RJC RCS RJA Junction-to-Case Case-to-Sink, Flat, Gr...channel Driver Gate Drive P.w. Period D= P.w. Period [VGS=10V ] *** D.U.T. ISD waveform ...
Description Power MOSFET(Vdss=-55V, Rds(on)=0.02ohm, Id=-74A) 功率MOSFET(减振钢板基本\u003d- 55V的,的Rds(on)\u003d 0.02ohm,身份证\u003d- 74A条)
-55V Single P-channel HEXFET Power MOSFET in a TO-220AB package

File Size 104.67K  /  8 Page

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    IRF5305L IRF5305S

IRF[International Rectifier]
Part No. IRF5305L IRF5305S
OCR Text ... (1.6mm from case ) Units A w w w/C V mJ A mJ V/ns C Thermal Resistance Parameter RJC RJA Junction-to-Case Junction-to-Ambient ( PC...channel Driver Gate Drive P.w. Period D= P.w. Period [VGS=10V ] *** D.U.T. ISD waveform Re...
Description Power MOSFET(Vdss=-55V/ Rds(on)=0.06ohm/ Id=-31A)
Power MOSFET(Vdss=-55V, Rds(on)=0.06ohm, Id=-31A)

File Size 167.31K  /  10 Page

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    IRF5305

IRF[International Rectifier]
Part No. IRF5305
OCR Text ... 10 lbf*in (1.1N*m) Units A w w/C V mJ A mJ V/ns C Thermal Resistance Parameter RJC RCS RJA Junction-to-Case Case-to-Sink, Flat, Gr...channel ** Use P-channel Driver for P-channel Measurements Driver Gate Drive P.w. Period D= P.w....
Description Power MOSFET(Vdss=-55V, Rds(on)=0.06ohm, Id=-31A)

File Size 120.44K  /  8 Page

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    IRF530A

FAIRCHILD[Fairchild Semiconductor]
Part No. IRF530A
OCR Text ... Units V A A V mJ A mJ V/ns w w/ C Continuous Drain Current (TC=100 C) Drain Current-Pulsed Gate-to-Source Voltage Single Pulsed Av...channel POwER MOSFET Electrical Characteristics (TC=25 C unless otherwise specified) Symbol BVDS...
Description N-channel POwER MOSFET
Advanced Power MOSFET

File Size 253.11K  /  7 Page

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