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vi-200 Datasheet PDF File

For vi-200 Found Datasheets File :: 23765 Search Time::2.047ms
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				Rohm
Part No.	EMF18
OCR Text	... built-in transistor. Symbol VI(off) VI(on) VO(on) II IO(off) GI fT R1 R2/R1 Min. - 3.0 - - - 68 - 32.9 0.8 Typ. - - 100 - - - 250 ...200 -4 -14.0 -10.5 -40 -150 -100 -2 -7.0 -3.5A IB = 0 -20 -50A IB = 0 -0....
Description	Power management (dual transistors)
File Size	76.05K / 4 Page	View it Online	Download Datasheet

				ON Semiconductor ROHM[Rohm]
Part No.	EMF19 UMF19N
OCR Text	... built-in transistor. Symbol VI(off) VI(on) VO(on) II IO(off) GI fT R1 R2/R1 Min. - 3.0 - - - 20 - 1.54 0.8 Typ. - - 100 - - - 250 ...200 DC CURRENT GAIN : hFE VCE=5V 3V 1V 200 25C -55C 0.2 100 100 0.1 IC/IB...
Description	Power management (dual transistors)
File Size	81.01K / 5 Page	View it Online	Download Datasheet

				ROHM[Rohm]
Part No.	EMF22 UMF22N
OCR Text	...equency of the device Symbol VI(off) VI(on) VO(on) II IO(off) GI R1 R2/R1 fT Min. - 3 - - - 30 7 0.8 - Typ. - - 0.1 - - - 10 1 250 ...200 100 50 20 10 5 2 1 0 Ta=100C 25C -40C VCC=5V 1k 500 DC CURRENT GAIN : GI VO=5V Ta=100C...
Description	Power management (dual transistors)
File Size	50.94K / 5 Page	View it Online	Download Datasheet

				Chinfa electronics
Part No.	FDD03-XXX
OCR Text	...03 series with single output Vi + Switching Device Vi - Rectifier Vo + Vo - Control Opto Isolation Reference & Error Amp. Block diagram for FDD03 series with dual output Vi + Rectifier Vo + Switching Device co...
Description	DC-DC Converter 3Watt
File Size	304.70K / 4 Page	View it Online	Download Datasheet

				Fairchild Semiconductor
Part No.	KSR2102
OCR Text	... BVCEO ICBO hFE VCE(sat) fT Cob VI(off) VI(on) R1 R1/R2 Parameter Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Colle...200 5.5 30 -0.3 V MHz pF V V K Min. -50 -50 -0.1 Typ. Max. Units V V A (c)2000 Fairchild Semicond...
Description	PNP Epitaxial Silicon Transistor
File Size	38.58K / 4 Page	View it Online	Download Datasheet

				Fairchild Semiconductor
Part No.	KSR2103
OCR Text	... BVCEO ICBO hFE VCE(sat) fT Cob VI(off) VI(on) R1 R1/R2 Parameter Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Colle...200 5.5 56 -0.3 V MHz pF V V K Min. -50 -50 -0.1 Typ. Max. Units V V A (c)2002 Fairchild Semicond...
Description	Switching Application
File Size	54.10K / 4 Page	View it Online	Download Datasheet

				PHILIPS[Philips Semiconductors] NXP Semiconductors
Part No.	74LVC1G86GW 74LVC1G86GV 74LVC1G86GM 74LVC1G86
OCR Text	...he outputs. 2. The condition is VI = GND to VCC. input capacitance power dissipation capacitance per buffer VCC = 3.3 V; notes 1 and 2 DESCR...200 200 5000 V V V V V V V V V V V V V V V V V V V A A A A 1.65 to 1.95 - 0.35 x VCC V q...
Description	74LVC1G86; 2-input EXCLUSIVE-OR gate
File Size	76.67K / 15 Page	View it Online	Download Datasheet

				Fairchild Semiconductor
Part No.	KSR2104 KSR2104MTF
OCR Text	... BVCEO ICBO hFE VCE(sat) fT Cob VI(off) VI(on) R1 R1/R2 Parameter Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Colle...200 5.5 68 -0.3 V MHz pF V V K Min. -50 -50 -0.1 Typ. Max. Units V V A (c)2002 Fairchild Semicond...
Description	PNP Epitaxial Silicon Transistor Switching Application (Bias Resistor Built In)
File Size	52.92K / 4 Page	View it Online	Download Datasheet

For vi-200 Found Datasheets File :: 23765 Search Time::2.047ms
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