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MICROSEMI[Microsemi Corporation]
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| Part No. |
MRF586 MSC1320
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| OCR Text |
...Silicon NPN, To-39 packaged VHF/uhf Transistor Ftau = 3.0 Ghz (typ) @ 300MHz, 14v, 90mA,
G
U max
2
= 12.5dB (typ) @ 300 MHz, 15v, 40mA
1. Emitter 2. Base 3. Collector
|S21|
= 12.5dB (typ) @ 300 MHz, 15v, 40mA
TO-39
DESC... |
| Description |
From old datasheet system
RF & microwave DISCRETE LOW POWER TRANSISTORS
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| File Size |
196.93K /
4 Page |
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it Online |
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STMICROELECTRONICS[STMicroelectronics]
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| Part No. |
SD1390 4671
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| OCR Text |
uhf BASE STATION APPLICATIONS
.470 .24 .P .CLASS .COMMON .POWER
P RELIMINARY DATA
MHZ VOLTS OUT = 1.5 W WITH 13.0 dB MIN. GAIN A EMITTER SATURATION 2.2 W MIN.
.28 0 x 4LS L (M1 2 3 ) O R DE R CODE SD1390 BRANDING SD1390
PIN CON... |
| Description |
From old datasheet system
RF & microwave TRANSISTORS uhf BASE STATION APPLICATIONS
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| File Size |
49.17K /
5 Page |
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it Online |
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TOSHIBA
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| Part No. |
2SC3429
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| OCR Text |
uhf Band Low Noise Amplifier Applications
* * * Low noise figure NF = 1.5dB, |S21e|2 = 16dB (f = 500 MHz) NF = 1.7dB, |S21e|2 = 10.5dB (f =...microwave Characteristics (Ta = 25C)
Characteristics Transition frequency Insertion gain Symbol fT ... |
| Description |
Transistor Silicon NPN Epitaxial Planar Type VHF~uhf Band Low Noise Amplifier Applications
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| File Size |
171.63K /
6 Page |
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it Online |
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TOSHIBA
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| Part No. |
2SC4840
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| OCR Text |
uhf Band Low Noise Amplifier Applications
* * Low noise figure, high gain. NF = 1.1dB, |S21e|2 = 13dB (f = 1 GHz) Unit: mm
Maximum Ratin...microwave Characteristics (Ta = 25C)
Characteristics Transition frequency Insertion gain Symbol fT ... |
| Description |
Transistor Silicon NPN Epitaxial Planar Type VHF~uhf Band Low Noise Amplifier Applications
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| File Size |
249.69K /
8 Page |
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it Online |
Download Datasheet |
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