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				TM Technology, Inc. Taiwan Memory Technology
Part No.	T6313A-BF T6313A-AF T6313A
OCR Text	...22 5.5 0.4 Unit V V V V V mA ua mA % ua ua us us us ns % KHz VEN (low) Enable threshold Low VEN (high) Enable threshold High VSET (low...ch Preliminary T6313A Typical Operating characteristics (VIN=+3.5V, CIN= COUT=C1=C2=1uF, TA=+...
Description	Low Noise, High Efficiency WhiteLED charge Pump 低噪声，高效率电荷泵WhiteLED
File Size	85.85K / 10 Page	View it Online	Download Datasheet

				Taiwan Memory Technology
Part No.	T63H0008A
OCR Text	...ua max.(IDD). 2.Power -down 0.1 ua max.(ISB). l Wide operating temperature range: -40C to +85C l Ultra Small package ..........................ch T63H0008A Part Number Examples (*Note 1) Over-charge detection voltage 4.28V 4.30V 4.325V ...
Description	Li-Ion Battery Protector
File Size	387.60K / 20 Page	View it Online	Download Datasheet

				Advanced Power Electronics Corp.
Part No.	AP2851GO
OCR Text	... 3 1 25 100 10 720 V V/ m m V S ua ua nA nC nC nC ns ns ns ns pF pF pF Breakdown Voltage Temperature Coefficient Reference to 25, ID=1mA ...ch Electrical characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS BVDSS/Tj Paramet...
Description	N AND P-chANNEL ENHANCEMENT MODE POWER MOSFET
File Size	93.46K / 7 Page	View it Online	Download Datasheet

				Advanced Power Electronics Corp.
Part No.	AP2852GO
OCR Text	... 3 1 25 100 13 950 V V/ m m V S ua ua nA nC nC nC ns ns ns ns pF pF pF Breakdown Voltage Temperature Coefficient Reference to 25, ID=1mA ...ch Electrical characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS BVDSS/Tj Paramet...
Description	N AND P-chANNEL ENHANCEMENT MODE POWER MOSFET
File Size	93.52K / 7 Page	View it Online	Download Datasheet

				Advanced Power Electronics
Part No.	4511GM
OCR Text	... o c) v ds =35v, v gs =0v - - 1 ua drain-source leakage current (t j =70 o c) v ds =28v, v gs =0v - - 25 ua i gss gate-source leakage v gs ...ch electrical characteristics@t j =25 o c(unless otherwise specified) symbol parameter test conditio...
Description	Search --To AP4511GM
File Size	133.49K / 7 Page	View it Online	Download Datasheet

				Advanced Power Electronics
Part No.	4511GD
OCR Text	...rrent v ds =35v, v gs =0v - - 1 ua drain-source leakage current (t j =70 o c) v ds =28v, v gs =0v - - 25 ua i gss gate-source leakage v gs ...ch electrical characteristics@t j =25 o c(unless otherwise specified) symbol parameter test conditio...
Description	Search --To AP4511GD
File Size	187.67K / 8 Page	View it Online	Download Datasheet

				Taiwan Memory Technology TM Technology, Inc.
Part No.	T15M256B03 T15M256B-70DG
OCR Text	...OL VOH MIN. TYP. MAX. UNIT 1 ua 2.4 1 0.4 37 35 30 25 20 0.3 10 ua V V mA mA mA mA mA mA ua VIH or WE = VIL I OL = + 2.1mA I OH = -...ch T15M256B CAPACITANCE (Vcc = 5V / 10%, Ta = 25C, f = 1 MHz) PARAMETER Input Capacitance I...
Description	32K X 8 LOW POWER CMOS STATIC RAM
File Size	84.84K / 13 Page	View it Online	Download Datasheet

				Taiwan Memory Technology
Part No.	T15M1024A04
OCR Text	... - 1 - 1 - 1 ua ILO or OE = VIH or WE = VIL VOUT= Gnd to Vcc CE1 = VIL,CE2= VIH, - 1 - 1 - 1 ...ch T15M1024A RECOMMENDED OPERATING CONDITIONS (Ta = 0 ~ +70 C /-40C to 85C**) PARAMETER Suppl...
Description	128K X 8 LOW POWER CMOS STATIC RAM
File Size	83.22K / 13 Page	View it Online	Download Datasheet

				Advanced Power Electronics
Part No.	4500GM
OCR Text	... o c) v ds =20v, v gs =0v - - 1 ua drain-source leakage current (t j =70 o c) v ds =16v, v gs =0v - - 25 ua i gss gate-source leakage v gs ...ch electrical characteristics@t j =25 o c(unless otherwise specified) symbol parameter test conditio...
Description	Search --To AP4500GM
File Size	123.30K / 7 Page	View it Online	Download Datasheet

For ua ch Found Datasheets File :: 1323 Search Time::1.797ms
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