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SamHop Microelectronics
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Part No. |
SP8009E
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OCR Text |
...r ds(on) . rugged and reliable. suface mount package. n-channel enhancement mode field effect transistor ver 1.5 www.samhop.com.tw oct,22,2013 1 details are subject to change without notice. tson 3.3 x 3.3 pin 1 sp8009e green product symbol... |
Description |
N-Channel Enhancement Mode Field Effect Transistor
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File Size |
111.79K /
8 Page |
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SamHop Microelectronics...
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Part No. |
SP8009
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OCR Text |
...r ds(on) . rugged and reliable. suface mount package. n-channel enhancement mode field effect transistor ver 1.1 www.samhop.com.tw jul,18,2013 1 details are subject to change without notice. tson 3.3 x 3.3 pin 1 sp8009 green product symbol ... |
Description |
Super high dense cell design for low RDS(ON). N-Channel Enhancement Mode Field Effect Transistor
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File Size |
77.42K /
6 Page |
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it Online |
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SamHop Microelectronics
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Part No. |
STM101N
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OCR Text |
...r ds(on) . rugged and reliable. suface mount package. n-channel enhancement mode field effect transistor absolute maximum ratings ( t a =25 c unless otherwise noted ) limit drain current-continuous a -pulsed b a sigle pulse avalanche energ... |
Description |
N-Channel Enhancement Mode Field Effect Transistor
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File Size |
181.60K /
7 Page |
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it Online |
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SamHop Microelectronics...
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Part No. |
STM121N
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OCR Text |
...d 1 d 1 g 2 s 2 g 1 s 1 5 6 7 8 suface mount package.
symbol min typ max units bv dss 100 v 1 i gss 100 na v gs(th) v 124 m ohm v gs =10v , i d =1.4a r ds(on) drain-source on-state resistance i dss ua gate threshold voltage v ds =v gs ,i ... |
Description |
Super high dense cell design for low RDS(ON). Dual N-Channel Enhancement Mode Field Effect Transistor
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File Size |
100.91K /
7 Page |
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it Online |
Download Datasheet
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SamHop Microelectronics...
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Part No. |
STM122N
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OCR Text |
...d 1 d 1 g 2 s 2 g 1 s 1 5 6 7 8 suface mount package.
symbol min typ max units bv dss 100 v 1 i gss 100 na v gs(th) v 83 g fs s c iss 930 pf c oss 63 pf c rss 45 pf q g 14 nc 14 38 8.2 t d(on) 14 ns t r ns t d(off) ns t f ns v ds =25v,v g... |
Description |
Super high dense cell design for low RDS(ON). Dual N-Channel Enhancement Mode Field Effect Transistor
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File Size |
101.77K /
7 Page |
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it Online |
Download Datasheet
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SamHop
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Part No. |
STS8212
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OCR Text |
...r ds(on) . rugged and reliable. suface mount package. absolute maximum ratings ( t a =25 c unless otherwise noted ) limit drain current-continuous a -pulsed b a maximum power dissipation a operating junction and storage temperature range t... |
Description |
Dual N-Channel Enhancement Mode Field Effect Transistor
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File Size |
102.86K /
7 Page |
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it Online |
Download Datasheet
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SamHop Microelectronics...
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Part No. |
STS8213
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OCR Text |
...r ds(on) . rugged and reliable. suface mount package. absolute maximum ratings ( t a =25 c unless otherwise noted ) limit drain current-continuous a -pulsed b a maximum power dissipation a operating junction and storage temperature ran... |
Description |
Super high dense cell design for low RDS(ON). Dual N-Channel Enhancement Mode Field Effect Transistor
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File Size |
108.35K /
7 Page |
View
it Online |
Download Datasheet
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SamHop Microelectronics
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Part No. |
STS8215
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OCR Text |
...r ds(on) . rugged and reliable. suface mount package. absolute maximum ratings ( t a =25 c unless otherwise noted ) limit drain current-continuous a -pulsed b a maximum power dissipation a operating junction and storage temperature range t... |
Description |
Dual N-Channel Enhancement Mode Field Effect Transistor
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File Size |
103.65K /
7 Page |
View
it Online |
Download Datasheet
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SamHop Microelectronics
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Part No. |
STS8216
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OCR Text |
...r ds(on) . rugged and reliable. suface mount package. absolute maximum ratings ( t a =25 c unless otherwise noted ) limit drain current-continuous a -pulsed b a maximum power dissipation a operating junction and storage temperature range t... |
Description |
Dual N-Channel Enhancement Mode Field Effect Transistor
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File Size |
181.58K /
7 Page |
View
it Online |
Download Datasheet
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SamHop Microelectronics...
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Part No. |
STS8217
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OCR Text |
...r ds(on) . rugged and reliable. suface mount package. absolute maximum ratings ( t a =25 c unless otherwise noted ) limit drain current-continuous a -pulsed b a maximum power dissipation a operating junction and storage temperature range t... |
Description |
Super high dense cell design for low RDS(ON). Dual N-Channel Enhancement Mode Field Effect Transistor
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File Size |
102.73K /
7 Page |
View
it Online |
Download Datasheet
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Price and Availability
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