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    IS42S16800A IS42S16800A-10T IS42S16800A-10TI IS42S16800A-10TL IS42S16800A-10TLI IS42S16800A-6T IS42S16800A-6TL IS42S1680

ISSI[Integrated Silicon Solution, Inc]
ISSI[Integrated Silicon Solution Inc]
Part No. IS42S16800A IS42S16800A-10T IS42S16800A-10TI IS42S16800A-10TL IS42S16800A-10TLI IS42S16800A-6T IS42S16800A-6TL IS42S16800A-7T IS42S16800A-7TI IS42S16800A-7TL IS42S16800A-7TLI IS42S32400A IS42S32400A-10T IS42S32400A-10TI IS42S32400A-10TL IS42S32400A-10TLI IS42S32400A-6T IS42S32400A-6TL IS42S32400A-7T IS42S32400A-7TI IS42S32400A-7TL IS42S32400A-7TLI IS42S81600A IS42S81600A-10T IS42S81600A-10TI IS42S81600A-10TL IS42S81600A-6T IS42S81600A-6TL IS42S81600A-7T IS42S81600A-7TI IS42S81600A-7TL IS42S81600A-7TLI 42S16800A
OCR Text ...ite accesses are burst oriented starting at a selected location and continuing for a programmed number of locations in a programmed sequence. The registration of an ACTIVE command begins accesses, followed by a READ or WRITE command. The AC...
Description 16Meg x 8 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM
16Meg x 8, 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM

File Size 534.78K  /  61 Page

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    IS42S32200 IS42S32200-6T IS42S32200-6TI IS42S32200-7T IS42S32200-7TI 42S32200

ISSI[Integrated Silicon Solution, Inc]
ETC
Part No. IS42S32200 IS42S32200-6T IS42S32200-6TI IS42S32200-7T IS42S32200-7TI 42S32200
OCR Text ...ite accesses are burst oriented starting at a selected location and continuing for a programmed number of locations in a programmed sequence. The registration of an ACTIVE command begins accesses, followed by a READ or WRITE command. The AC...
Description 512K Bits x 32 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM

File Size 953.57K  /  55 Page

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    K9F5608U0M- K9F5608U0M-YCB0 K9F5608U0M-YIB0

Samsung Electronics Inc
SAMSUNG[Samsung semiconductor]
Part No. K9F5608U0M- K9F5608U0M-YCB0 K9F5608U0M-YIB0
OCR Text ...ess) NOTE : Column Address : starting Address of the Register. 00h Command(Read) : Defines the starting address of the 1st half of the register. 01h Command(Read) : Defines the starting address of the 2nd half of the register. * A8 is se...
Description From old datasheet system
EEPROM,NAND FLASH,33MX8,CMOS,TSSOP,48PIN,PLASTIC
32M x 8 Bit NAND Flash Memory

File Size 350.10K  /  26 Page

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    K9F5608U0 K9F5608U0A K9F5608U0A-YCB0 K9F5608U0A-YIB0

Samsung Electronic
Samsung semiconductor
Part No. K9F5608U0 K9F5608U0A K9F5608U0A-YCB0 K9F5608U0A-YIB0
OCR Text ...ess) NOTE : Column Address : starting Address of the Register. 00h Command(Read) : Defines the starting address of the 1st half of the register. 01h Command(Read) : Defines the starting address of the 2nd half of the register. * A8 is se...
Description 32M x 8 Bit NAND Flash Memory

File Size 607.24K  /  29 Page

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    IS42S16400-7T IS42S16400-7TI IS42S16400-6T IS42S16400-10T IS42S16400-10TI IS42S16400

Integrated Silicon Solution, Inc
Part No. IS42S16400-7T IS42S16400-7TI IS42S16400-6T IS42S16400-10T IS42S16400-10TI IS42S16400
OCR Text ...ite accesses are burst oriented starting at a selected location and continuing for a programmed number of locations in a programmed sequence. The registration of an ACTIVE command begins accesses, followed by a READ or WRITE command. The AC...
Description 1 Meg Bits x 16 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM

File Size 556.38K  /  54 Page

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    IRF2907ZLPBF IRF2907ZPBF IRF2907ZSPBF

International Rectifier
Part No. IRF2907ZLPBF IRF2907ZPBF IRF2907ZSPBF
OCR Text ...ee fig. 11). Limited by TJmax, starting TJ = 25C, L=0.095mH, RG = 25, IAS = 75A, VGS =10V. Part not recommended for use above this value. ISD 75A, di/dt 340A/s, VDD V(BR)DSS, TJ 175C. Pulse width 1.0ms; duty cycle 2%. Coss eff. is...
Description HEXFET Power MOSFET

File Size 783.77K  /  12 Page

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    TSM20N50CIC0 TSM20N50CZC0 TSM20N5013

Taiwan Semiconductor Company, Ltd
Taiwan Semiconductor Compan...
Part No. TSM20N50CIC0 TSM20N50CZC0 TSM20N5013
OCR Text ..., i as =16a, l=5mh, r g =25 ? , starting t j =25 3. guaranteed 100% e as test condition: v dd = 50v, i as =16a, l=1mh, r g =25 ? , starting t j =25 4. i sd 18a, di/dt 200a/us, v dd bv ds , starting t j =25 5. pulse te...
Description 500V N-Channel Power MOSFET

File Size 442.60K  /  10 Page

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    ML4835 ML4835CP ML4835CS

MICRO-LINEAR[Micro Linear Corporation]
Part No. ML4835 ML4835CP ML4835CS
OCR Text ...ction provides for programmable starting sequence with individual adjustable preheat and lamp out-of-socket interrupt times. The ML4835 provides a shut down for both PFC and ballast controllers in the event of end-of-life for the CFL. FE...
Description Compact Fluorescent Electronic Dimming Ballast Controller

File Size 378.84K  /  17 Page

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    IRF3805S-7P

International Rectifier
Part No. IRF3805S-7P
OCR Text ...ee fig. 11). Limited by TJmax, starting TJ = 25C, L=0.043mH, R G = 25, IAS = 140A, VGS =10V. Part not recommended for use above this value. Pulse width 1.0ms; duty cycle 2%. Coss eff. is a fixed capacitance that gives the same charging...
Description AUTOMOTIVE MOSFET

File Size 635.17K  /  10 Page

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