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For single-turn Found Datasheets File :: 57360    Search Time::3.344ms    
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    IRF[International Rectifier]
Part No. IRFZ48N IRFZ48NPBF
OCR Text ...ce Reverse Transfer Capacitance Single Pulse Avalanche Energy Min. 55 --- --- 2.0 24 --- --- --- --- --- --- --- --- --- --- --- --- --- ...Turn-On Time Min. Typ. Max. Units Conditions D MOSFET symbol 64 --- --- showing the A G integr...
Description 55V Single N-Channel HEXFET Power MOSFET in a TO-220AB package

File Size 100.17K  /  8 Page

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    IRF[International Rectifier]
Part No. IRFZ48NSPBF IRFZ48NLPBF
OCR Text ...ce Reverse Transfer Capacitance Single Pulse Avalanche Energy Min. 55 --- --- 2.0 24 --- --- --- --- --- --- --- --- --- --- --- --- --- ---...Turn-On Time Min. Typ. Max. Units Conditions D MOSFET symbol 64 --- --- showing the A G integr...
Description HEXFET Power MOSFET

File Size 291.52K  /  10 Page

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    LANC482.5W12-S LANC482.5W12

Wall Industries,Inc.
Part No. LANC482.5W12-S LANC482.5W12
OCR Text ...UV CB CE MARK RoHS Compliant Single Output Standard 24 Pin DIP and SMT Package Five-Sided Continuous Shield No Minimum Load Required High...Turn-on Threshold 36 Vdc UVLO Turn-off Threshold 33 Vdc Input Standby Current Nominal Vin and No Loa...
Description DC/DC Converter 36-75 VDC Input 2.5 VDC Output at 3.5A

File Size 1,032.45K  /  14 Page

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    IRFZ46N_04 IRFZ46N IRFZ46NPBF

IRF[International Rectifier]
Part No. IRFZ46N_04 IRFZ46N IRFZ46NPBF
OCR Text ...ce Reverse Transfer Capacitance Single Pulse Avalanche Energy Min. 55 --- --- 2.0 19 --- --- --- --- --- --- --- --- --- --- --- --- --- ...Turn-On Time Min. Typ. Max. Units Conditions D MOSFET symbol --- --- 53 showing the A G integr...
Description HEXFET? Power MOSFET(VDSS = 55V,RDS(on) = 16.5mΩ,ID = 53A)
HEXFET㈢ Power MOSFET(VDSS = 55V,RDS(on) = 16.5mヘ,ID = 53A)

File Size 179.99K  /  9 Page

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    IRF[International Rectifier]
Part No. IRFZ44NPBF
OCR Text ...ce Reverse Transfer Capacitance Single Pulse Avalanche Energy Min. Typ. Max. Units Conditions 55 --- --- V VGS = 0V, ID = 250A --- 0.058 ...Turn-On Time Min. Typ. Max. Units Conditions D MOSFET symbol 49 --- --- showing the A G integr...
Description HEXFET-R Power MOSFET

File Size 143.59K  /  8 Page

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    IRF3709 IRF3709L IRF3709S IRF370B9L IRF370B9S F3709S

International Rectifier, Corp.
IRF[International Rectifier]
Part No. IRF3709 IRF3709L IRF3709S IRF370B9L IRF370B9S F3709S
OCR Text ... Symbol EAS IAR Parameter Single Pulse Avalanche Energy Avalanche Current Typ. --- --- Max. 382 30 Units mJ A Diode Characteristics Symbol IS ISM Parameter Continuous Source Current (Body Diode) Pulsed Source Curr...
Description Power MOSFET(Vdss=30V, Rds(on)max=9.0mohm, Id=90A?
Power MOSFET(Vdss=30V, Rds(on)max=9.0mohm, Id=90A 功率MOSFET(减振钢板基本\u003d 30V的,的Rds(on)最大值\u003d 9.0mohm,身份证\u003d 90A型?
Power MOSFET(Vdss=30V/ Rds(on)max=9.0mohm/ Id=90A)
Power MOSFET(Vdss=30V, Rds(on)max=9.0mohm, Id=90A)
Power MOSFET(Vdss=30V, Rds(on)max=9.0mohm, Id=90A?)
Power MOSFET(Vdss=30V, Rds(on)max=9.0mohm, Id=90A??

File Size 120.60K  /  11 Page

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    GALAXY[Galaxy Power, Inc.]
Part No. GPBW52V04R GPBW52V04SSRG003 GPBW52V04MMRG001 GPBW52V04MMRG002 GPBW52V04MMRG003 GPBW52V04MSRG001 GPBW52V04MSRG002 GPBW52V04MSRG003 GPBW52V04PMRG001 GPBW52V04PMRG002 GPBW52V04PMRG003 GPBW52V04PSRG001 GPBW52V04PSRG002 GPBW52V04PSRG003 GPBW52V04RMRG001 GPBW52V04RMRG002 GPBW52V04RMRG003 GPBW52V04RSRG001 GPBW52V04RSRG002 GPBW52V04RSRG003 GPBW52V04SMRG001 GPBW52V04SMRG002 GPBW52V04SMRG003 GPBW52V04SSRG001 GPBW52V04SSRG002
OCR Text ... Frequency, 330kHz Remote Sense Single Board SMT Construction Low Profile, 0.4" Optional Low Profile Heatsink for Improved Thermal Performan...Turn-on Time to 98% Vnom Output Overshoot at Turn-on Trim Range Overvoltage Protection, Latching 98 ...
Description BOLERO HV Series 48V Input, 52VDC, 4A Output

File Size 951.21K  /  7 Page

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    IRF3710 IRF3710PBF

International Rectifier, Corp.
IRF[International Rectifier]
Part No. IRF3710 IRF3710PBF
OCR Text ...ce Reverse Transfer Capacitance Single Pulse Avalanche Energy Min. 100 --- --- 2.0 32 --- --- --- --- --- --- --- --- --- --- --- --- ---...Turn-On Time Min. Typ. Max. Units Conditions D MOSFET symbol 57 --- --- showing the A G integr...
Description Power MOSFET(Vdss=100V, Rds(on)=23mohm, Id=57A) 功率MOSFET(减振钢板基本\u003d 100V的,的Rds(on)\u003d 23mohm,身份证\u003d 57A条)
Power MOSFET(Vdss=100V Rds(on)=23mohm Id=57A)
100V Single N-Channel HEXFET Power MOSFET in a TO-220AB package

File Size 92.57K  /  8 Page

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    IRF3711 IRF3711L IRF3711S

IRF[International Rectifier]
Part No. IRF3711 IRF3711L IRF3711S
OCR Text ... Symbol EAS IAR Parameter Single Pulse Avalanche Energy Avalanche Current Typ. --- --- Max. 460 30 Units mJ A Diode Characteristics Symbol IS ISM Parameter Continuous Source Current (Body Diode) Pulsed Source Curr...
Description Power MOSFET(Vdss=20V, Rds(on)max=6.0mohm, Id=110A??
Power MOSFET(Vdss=20V/ Rds(on)max=6.0mohm/ Id=110A)
Power MOSFET(Vdss=20V, Rds(on)max=6.0mohm, Id=110A?)
Power MOSFET(Vdss=20V, Rds(on)max=6.0mohm, Id=110A)
Power MOSFET(Vdss=20V, Rds(on)max=6.0mohm, Id=110A?

File Size 243.87K  /  11 Page

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    IRF3717

IRF[International Rectifier]
Part No. IRF3717
OCR Text ... Transfer Capacitance Parameter Single Pulse Avalanche Energy Avalanche Current Min. Typ. Max. Units 20 --- --- --- 1.55 --- --- --- ---...turn on. The drain of Q2 is connected to the switching node of the converter and therefore sees tran...
Description HEXFETPower MOSFET

File Size 246.14K  /  10 Page

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