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p3db Datasheet PDF File

For p3db Found Datasheets File :: 460 Search Time::1.782ms
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				STMicroelectronics
Part No.	PD85025STR-E PD85025-E PD85025S-E PD85025TR-E
OCR Text	....2 Dynamic Table 5. Symbol p3db GP hD Dynamic Test conditions VDD = 13.6 V, IDQ = 300 mA f = 870 MHz Min 25 15 60 20:1 Typ 30 17.3 66 Max Unit W dB % VSWR VDD = 13.6 V, IDQ = 300 mA, POUT = 10 W, f = 870 MHz VDD = 13.6 V, IDQ = ...
Description	RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs
File Size	330.01K / 15 Page	View it Online	Download Datasheet

				STMicroelectronics
Part No.	PD85015STR-E PD85015-E PD85015S-E PD85015TR-E
OCR Text	....2 Dynamic Table 5. Symbol p3db GP hD Dynamic Test conditions VDD = 13.6 V, IDQ = 150 mA f = 870 MHz Min 15 16 60 20:1 70 Typ 20 Max Unit W dB % VSWR VDD = 13.6 V, IDQ = 150 mA, POUT = 15 W, f = 870 MHz VDD = 13.6 V, IDQ = 150 m...
Description	RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs
File Size	229.74K / 13 Page	View it Online	Download Datasheet

				STMicroelectronics
Part No.	PD84010STR-E PD84010S-E PD84010TR-E PD84010-E
OCR Text	....2 Dynamic Table 5. Symbol p3db GP hD Dynamic Test conditions VDD = 7.5V, IDQ = 300mA f = 870MHz Min. 10 15 60 20:1 Typ. 12 16.3 73 Max. Unit W dB % VSWR VDD = 7.5V, IDQ = 300mA, POUT = 2W, f = 870MHz VDD = 7.5V, IDQ = 300mA, PO...
Description	RF power transistor, LDMOST plastic family N-channel enhancement-mode lateral MOSFETs
File Size	346.07K / 14 Page	View it Online	Download Datasheet

				STMicroelectronics
Part No.	PD85035C
OCR Text	....2 Dynamic Table 5. Symbol p3db GP hD Dynamic Test conditions VDD = 13.6 V, IDQ = 350 mA f = 945 MHz Min 35 15 60 20:1 17.5 77 Typ Max Unit W dB % VSWR VDD = 13.6 V, IDQ = 350 mA, POUT = 15W, f = 945 MHz VDD = 13.6 V, IDQ = 350 ...
Description	RF power transistor - LdmoST family
File Size	217.06K / 10 Page	View it Online	Download Datasheet

				STMicroelectronics
Part No.	PD85035STR-E PD85035-E PD85035S-E PD85035TR-E
OCR Text	....2 Dynamic Table 5. Symbol p3db GP hD Dynamic Test conditions VDD = 13.6V, IDQ = 350mA f = 870MHz Min. 35 15 60 20:1 Typ. 40 17 72 Max. Unit W dB % VSWR VDD = 13.6V, IDQ = 350mA, POUT = 15W, f = 870MHz VDD = 13.6V, IDQ = 350mA, ...
Description	RF POWER transistor, LDMOST plastic family N-Channel enhancement-mode lateral MOSFETs
File Size	348.65K / 15 Page	View it Online	Download Datasheet

				FREESCALE[Freescale Semiconductor, Inc]
Part No.	MRF6P3300HR5 MRF6P3300H MRF6P3300HR3 MRF6P3300HR3_06
OCR Text	... P6dB = 56.28 dBm (424.54 W) p3db = 55.87 dBm (386.48 W) P1dB = 55.20 dBm (330.94 W) Actual Ideal VDD = 32 Vdc, IDQ = 1600 mA Pulsed CW, 8 sec(on), 1 msec(off) f = 860 MHz 33 34 35 36 37 38 39 40 41 42 43 44 Pin, INPUT POWER (dBm) ...
Description	RF Power Field Effect Transistor
File Size	998.42K / 24 Page	View it Online	Download Datasheet

				FREESCALE[Freescale Semiconductor, Inc]
Part No.	MRF6P9220HR3_06 MRF6P9220HR3 MRF6P9220HR306
OCR Text	...dB = 54.95 dBm (312.77 W) Ideal p3db = 54.60 dBm (288.76 W) P1dB = 54.05 dBm (255.09 W) 55 53 51 49 29 31 33 35 37 39 41 Pin, INPUT POWER (dBm) VDD = 28 Vdc, IDQ = 1600 mA Pulsed CW, 8 sec(on), 1 msec(off) f = 880 MHz Actual Figure 9....
Description	RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET
File Size	494.89K / 12 Page	View it Online	Download Datasheet

				FREESCALE[Freescale Semiconductor, Inc]
Part No.	MRF6P9220HR3
OCR Text	...dB = 54.95 dBm (312.77 W) Ideal p3db = 54.60 dBm (288.76 W) P1dB = 54.05 dBm (255.09 W) 55 Actual 53 51 49 29 31 33 35 37 39 41 Pin, INPUT POWER (dBm) VDD = 28 Vdc, IDQ = 1600 mA Pulsed CW, 8 sec(on), 1 msec(off) f = 880 MHz Figure 9....
Description	880 MHz, 47 W AVG., 28 V SINGLE N-CDMA LATERAL N-CHANNEL RF POWER MOSFET
File Size	431.30K / 12 Page	View it Online	Download Datasheet

				FREESCALE[Freescale Semiconductor, Inc]
Part No.	MRF6S18140HSR3 MRF6S18140HR3
OCR Text	...1 50 49 32 33 34 35 36 37 38 39 p3db = 53.36 dBm (216.77 W) Figure 8. Intermodulation Distortion Products versus Tone Spacing Ideal P6dB = 53.90 dBm (245.47 W) Actual VDD = 28 Vdc, IDQ = 1200 mA Pulsed CW, 12 sec(on), 1% Duty Cycle...
Description	RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
File Size	405.55K / 12 Page	View it Online	Download Datasheet

				Freescale Semiconductor... FREESCALE[Freescale Semiconductor, Inc]
Part No.	MRF6S19060NR1 MRF6S19060NBR1 MRF6S19060N MRF6S19060NR108
OCR Text	...Center Frequency of 1960 MHz 53 p3db = 49.503 dBm (89.19 W) Pout, OUTPUT POWER (dBm) 51 49 47 45 43 41 39 23 P1dB = 48.792 dBm (75.72 W) Ideal -20 -30 3rd Order -40 5th Order -50 7th Order Actual VDD = 28 Vdc, IDQ = 610 mA Pu...
Description	RF Power Field Effect Transistors
File Size	605.95K / 16 Page	View it Online	Download Datasheet

For p3db Found Datasheets File :: 460 Search Time::1.782ms
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