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Toshiba, Corp.
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Part No. |
GT60n321
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Description |
Insulated Gate Bipolar Transistor Silicon n Channel IGBT high power Switching Applications The 4th Generation high power Switching Applications The 4th Generation 高功率转换应用的第四
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File Size |
172.02K /
6 Page |
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it Online |
Download Datasheet |
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Toshiba Corporation TOSHIBA[Toshiba Semiconductor]
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Part No. |
GT5J331_SM GT5J311 GT5J331SM GT5J311SM
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Description |
TRAnSISTOR | IGBT | n-CHAn | 600V V(BR)CES | 5A I(C) | TO-263AB n CHAnnEL IGBT(high power SWITCHInG/ MOTOR COnTROL APPLICATIOnS) n CHAnnEL IGBT(high power SWITCHInG, MOTOR COnTROL APPLICATIOnS)
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File Size |
292.45K /
6 Page |
View
it Online |
Download Datasheet |
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Price and Availability
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