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  ms-7 Datasheet PDF File

For ms-7 Found Datasheets File :: 108197    Search Time::2ms    
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    AH1801-SNG-7 AH1801-WG-7 AH1801-FJG-7 AH180109 AH1801

Diodes Inc.
Diodes Incorporated
Part No. AH1801-SNG-7 AH1801-WG-7 AH1801-FJG-7 AH180109 AH1801
OCR Text ...0 - Unit V A mA mA A A A A s ms % Idd(dis) Supply Current Idd(avg) Tawake Tperiod D.C. Notes: Awake Time Period Duty Cycle ...7 5 of 10 www.diodes.com FEBRUARY 2009 (c) Diodes Incorporated AH1801 MICROPOWER, ULTR...
Description MICROPOWER, ULTRA-SENSITIVE HALL-EFFECT SWITCH
MICROPOWER, ULTRA-SENSITIVE HALL EFFECT

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    AH1803-SNG-7 AH1803-WG-7 AH1803

Diodes, Inc.
Diodes Inc.
Diodes Incorporated
Part No. AH1803-SNG-7 AH1803-WG-7 AH1803
OCR Text ...0 - Unit V V mA mA A A A A s ms % Idd(dis) Idd(avg) Tawake Tperiod D.C. Notes: Output On Voltage (High side) IOUT = -1mA Vdd-0....7) (1mT = 10G) Max Unit 4 -2 -1 - Parameter Operation Point Release Point Hysteresis Min 2 -4...
Description MICROPOWER ULTRA-SENSITIVE HALL-EFFECT SENSOR
MAGNETIC FIELD SENSOR-HALL EFFECT, -4-4mT, 0.1-2.8V, RECTANGULAR, SURFACE MOUNT GREEN, SC-59, 3 PIN
MICROPOWER, ULTRA-SENSITIVE HALL EFFECT

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    DMN26D0UDJ-7

Diodes Incorporated
Part No. DMN26D0UDJ-7
OCR Text ...nductance |y fs | 180 240 ? ms v ds =10v, i d = 0.1a source-drain diode forward voltage v sd 0.5 0.8 1.0 v v gs = 0v, i s = 10ma dynamic characteristics (note 7) input capacitance c iss ? 14.1 ? pf v ds = 15v, v gs ...
Description DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

File Size 103.84K  /  5 Page

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    HYS64D64020GBDL-7-B

Infineon Technologies AG
Part No. HYS64D64020GBDL-7-B
OCR Text ...m 64 2 32m 8 16 13/2/10 8k 64 ms 7.8 s data sheet 9 v1.0, 2003-08 hys64d64020gbdl?[5/6/7/8]?b small outline ddr sdram modules pin configuration table 5 pin configuration front side back side front side back side front side back s...
Description 200-Pin Small Outline Dual-In-Line Memory Modules 200引脚小外型双列直插内存模

File Size 368.95K  /  25 Page

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    Winbond Electronics
Part No. W9864G2DB-7
OCR Text ......... 16 10. timing wavefor ms ............................................................................................................7). w9864g2db -7. accesses to the sdram are bur st oriented. consecutive memory location in one ...
Description BGA SDRAM

File Size 1,246.21K  /  48 Page

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    AP9060FM8-7 AP9060

Diodes Incorporated
Part No. AP9060FM8-7 AP9060
OCR Text ...start time v in = 5v 10 ms notes: 8. pulse tested with a width of 20ms. 9. guaranteed by design. 10. to suppo...7 on-resistance (normalized) vs. temperature figure 8 fet leakage current (in the...
Description OVERVOLTAGE CLAMP

File Size 295.54K  /  9 Page

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    HYB39S128800FT-7 HYB39S128400FTL-7 HYB39S128400FT-7 HYB39S128800FTL-7 HYB39S128160FTL-7 HYB39S128407FE-7 HYB39S128400FEL

Qimonda AG
Part No. HYB39S128800FT-7 HYB39S128400FTL-7 HYB39S128400FT-7 HYB39S128800FTL-7 HYB39S128160FTL-7 HYB39S128407FE-7 HYB39S128400FEL-7 HYB39S128800FEL-7 HYI39S128160FE-7 HYB39S128160FT-7 HYI39S128160FT-7 HYB39S128800FE-7 HYI39S128800FT-7 HYI39S128800FE-7 HYB39S128400FE-7 HYB39S128400F
OCR Text ...d Mode 4096 refresh cycles / 64 ms (15.6 s) Random Column Address every CLK (1-N Rule) Single 3.3 V 0.3 V Power Supply LVTTL Interface Plas...7]F[E/T](L) and the ordering information. Fully Synchronous to Positive Clock Edge 0 to 70 C Stan...
Description 128-MBit Synchronous DRAM 32M X 4 SYNCHRONOUS DRAM, 5.4 ns, PDSO54
128-MBit Synchronous DRAM 8M X 16 SYNCHRONOUS DRAM, 5.4 ns, PDSO54

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    MMDT3906-7 MMDT3906

DIODES[Diodes Incorporated]
Part No. MMDT3906-7 MMDT3906
OCR Text ...oe fT NF pF pF kW x 10-4 3/4 mS MHz dB VCE = 10V, IC = 1.0mA, f = 1.0kHz VCE = -20V, IC = -10mA, f = 100MHz VCE = -5.0V, IC = -100m...7 2005 S Aug 8 2006 T Sep 9 2007 U Oct O 2008 V Nov N 2009 W Dec D DS30124 Rev. 5 ...
Description DUAL PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR

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    LMN200B02-7 LMN200B02

Diodes Incorporated
Part No. LMN200B02-7 LMN200B02
OCR Text ...37 2.2 1.5 3.75 3 2 V V mA mS VDS = VGS, ID = 0.25mA VGS = 5V, ID = 50mA VGS = 10V, ID = 115mA VGS = 10V, VDS 2XVDS(ON) VGS = 5V, ID =...7 VBE(ON) vs. IC VCE = 5V 400 hFE, DC CURRENT GAIN TA = 125C 300 TA = 85C TA = 25C TA = 150C ...
Description 200 mA LOAD SWITCH FEATURING PRE-BIASED PNP TRANSISTOR AND N-MOSFET WITH GATE PULL DOWN RESISTOR

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Part No. KM68FS8100FI-7
OCR Text ...e data retention waveform 0 - - ms recovery time t rdr trc - - ac characteristics (vcc=2.3~2.7v, t a =-40 to 85 c) parameter list symbol ...7 cmos sram timing waveform of write cycle(1) ( we controlled) address cs 1 t cw(2) t wr(4) timin...
Description 1M X 8 STANDARD SRAM, 70 ns, PBGA48

File Size 154.21K  /  9 Page

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