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  juncton Datasheet PDF File

For juncton Found Datasheets File :: 133    Search Time::0.984ms    
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    RSB6.8S11

Protek Devices
Part No. RSB6.8S11
OCR Text ... temperature t stg -55 to 150 c juncton temperature t l 150 c electrical c h aracteristics per line @ 25c u nless otherwise specifed part n u mber (note 1) device mar k in g rated stand-off volta g e v wm volts minim u m brea k down volta ...
Description LOW CAPACITANCE TVS ARRAY

File Size 359.82K  /  6 Page

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    RSB6.8S12

Protek Devices
Part No. RSB6.8S12
OCR Text ... temperature t stg -55 to 150 c juncton temperature t l 150 c electrical c h aracteristics per line @ 25c u nless otherwise specifed part n u mber (note 1) device mar k in g rated stand-off volta g e v wm volts minim u m brea k down volta ...
Description LOW CAPACITANCE TVS ARRAY

File Size 361.18K  /  6 Page

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    1SMB592604

Pan Jit International Inc.
Part No. 1SMB592604
OCR Text ...e 75O C (N O TE 1) ae O per tng juncton and S t r geTem per t r R ange ai i oa aue S ym bol Val e u 1. 5 - 5 t +150 5o U nis t W ats t O PD TJ ,TSTG C NOTES: 1.Mounted on 5.0mm2 (.013mm thick) land areas. STAD-NOV.05.2...
Description GLASS PASSIVATED JUNCTION SILICON ZENER DIODES

File Size 82.73K  /  4 Page

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    1N5926B04

Pan Jit International Inc.
Part No. 1N5926B04
OCR Text ...e 75O C (N O TE 1) ae O per tng juncton and S t r geTem per t r R ange ai i oa aue S ym bol Val e u 1. 5 - 5 t +150 5o U nis t W ats t O PD TJ ,TSTG C NOTES: 1.Mounted on 5.0mm2 (.013mm thick) land areas. STAD-JUN.23.2...
Description GLASS PASSIVATED JUNCTION SILICON ZENER DIODES

File Size 45.46K  /  4 Page

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    CSP040605C12

Protek Devices
Part No. CSP040605C12
OCR Text ...hat employ advanced silicon p/n juncton technology for unmatched board-level transient voltage protecton against elec - trostatc discharge (esd) and electrical fast transients (eft). developed specifcally for high-density circuit protecton...
Description 200W CHIP SCALE

File Size 472.69K  /  8 Page

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    ULLC0408FC05C11

Protek Devices
Part No. ULLC0408FC05C11
OCR Text ...ip employs advanced silicon p/n juncton technology for unmatched board-level transient voltage protecton against electrostatc dis - charge (esd) and electrical fast transients (eft). developed specifcally for high-density circuit protecton...
Description UNBUMPED LOW CAPACITANCE FLIP CHIP TVS ARRAY

File Size 432.67K  /  8 Page

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    ULLC0408FC05C12

Protek Devices
Part No. ULLC0408FC05C12
OCR Text ...ip employs advanced silicon p/n juncton technology for unmatched board-level transient voltage protecton against electrostatc dis - charge (esd) and electrical fast transients (eft). developed specifcally for high-density circuit protecton...
Description UNBUMPED LOW CAPACITANCE FLIP CHIP TVS ARRAY

File Size 433.78K  /  8 Page

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    MMIX1F44N100Q3

IXYS Corporation
Part No. MMIX1F44N100Q3
OCR Text ...product features include a low juncton-to-case thermal resistance (r thjc(max) ) of 0.18 c/w and high avalanche energy (e as ) ratng of 4 joules. the new power mosfet is well suited for such applicatons as, among others, dc-dc converter...
Description 1000V Q3-Class HiPerFET Power MOSFET In SMPD Technology

File Size 2,643.51K  /  2 Page

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    Vishay
Part No. RGP25A
OCR Text ... = 25 c reverse volt a ge (v) juncton capacitance (pf) t j = 25 c f = 1.0 mh z vsig = 50mvp-p ratings and characteristic curves (t a = 25 c unless otherwise noted)
Description Glass Passivated Junction, Fast Switching Rectifier, Forward Current 2.5A

File Size 28.33K  /  2 Page

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    RGP15D

Vishay Siliconix
Part No. RGP15D
OCR Text ... 1 10 100 rever s e voltage (v) juncton capacitance (pf) t j = 25 c f = 1.0 mhz v s ig = 50 mv p-p 0.01 0.1 1 10 100 0.1 1 10 100 t - pul s e duration ( s ) tran s ient thermal impedance (c/w) do-204ac (do-15) 0.034 (0.86) 0.028 (0.71) di...
Description Glass Passivated Junction Fast Switching Rectifier

File Size 71.89K  /  4 Page

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For juncton Found Datasheets File :: 133    Search Time::0.984ms    
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