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  j-1850 Datasheet PDF File

For j-1850 Found Datasheets File :: 636    Search Time::4.234ms    
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    IRFP4232PBF

International Rectifier
Part No. IRFP4232PBF
OCR Text ...max @ TC= 100C TJ max V V m: J A C G S TO-247AC Description This HEXFET(R) Power MOSFET is specifically designed for Sustain; Ener...1850 V ns nC Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge --- --- 240 Min....
Description PDP MOSFET

File Size 290.96K  /  8 Page

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    STB40NE03L-20

STMicroelectronics
Part No. STB40NE03L-20
OCR Text ...ge temperature -65 to 175 o c t j max. operating junction temperature 175 o c ( ? ) pulse width limited by safe operating area ( 1 )i sd 40...1850 450 160 2400 590 210 pf pf pf stb40ne03l-20 2/8 electrical characteristics (continued) swit...
Description N-CHANNEL POWER MOSFET

File Size 131.93K  /  8 Page

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    Advanced Power Technology, Ltd.
Part No. APT50GN60BDQ2G
OCR Text ...v ce = v ge , i c = 800 a, t j = 25c) collector-emitter on voltage (v ge = 15v, i c = 50a, t j = 25c) collector-emitter on voltage ...1850 2125 unit pf v nc a s ns j ns j 050-7613 rev b 7-2005 apt50gn60bdq2(g) typi...
Description IGBT IGBT

File Size 325.78K  /  9 Page

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    SFF12N60

SemiWell Semiconductor
Part No. SFF12N60
OCR Text ... absolutemaximumratings(t j =25 unless otherwise specified) symbol parameter ratings units v dss drainsourcevoltage 600 v i d dr...1850 pf c oss outputcapacitance 180 pf c rss reversetransfercapacitance 20 pf 2/3 ...
Description N-Channel MOSFET

File Size 99.32K  /  3 Page

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    MTB55N10Q8

Cystech Electonics Corp.
Part No. MTB55N10Q8
OCR Text ...ce, junction-to-case, max r th,j-c 20 c/w thermal resistance, junction-to-ambient, max r th,j-a 40 *3 c/w note : 1. p...1850 0.2007 4.70 5.10 i 0.0031 0.0110 0.08 0.28 b 0.1457 0.1614 3.70 4.10 j 0.0157 0...
Description N -Channel Logic Level Enhancement Mode Power MOSFET

File Size 262.92K  /  9 Page

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    Alpha
Part No. AOD456L
OCR Text j , t stg symbol typ max 15 20 41 50 r jc 2.1 3 w maximum junction-to-case b steady-state c/w thermal characteristics parameter units maxi...1850 2220 pf c oss 472 pf c rss 275 pf r g 0.86 1.5 ? q g (10v) 31.7 38 nc q g (4.5v) 15.7 19 nc q g...
Description N-Channel Enhancement Mode Field Effect Transistor N沟道增强型场效应

File Size 116.95K  /  5 Page

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