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POWEREX[Powerex Power Semiconductors]
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| Part No. |
CM800DU-12 CM800DU-12H
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| OCR Text |
...ns. Each module consists of two IGBT Transistors in a halfbridge configuration with each transistor having a reverse-connected super-fast re...diE/dt = -1600A/s VCE = 10V, VGE = 0V Test Conditions Min. - - - - - - - - - Typ. - - - - - - - - 1.... |
| Description |
Dual IGBTMOD 800 Amperes/600 Volts
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| File Size |
75.31K /
4 Page |
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it Online |
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International Rectifier, Corp.
IRF[International Rectifier]
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| Part No. |
IRAMX20UP6 IRAMX20UP60A
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| OCR Text |
... IR's low VCE(on) Punch-Through IGBT technology and the industry benchmark 3 phase high voltage, high speed driver in a fully isolated therm...die along with full transfer mold structure minimizes PCB space and resolves isolation problems to h... |
| Description |
20A, 600V with open Emitter Pins 20A00V的开放式发射器针
20A 600V with open Emitter Pins
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| File Size |
237.88K /
17 Page |
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it Online |
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ON Semi
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| Part No. |
MHPM6B25N120 MHPM6B10N120 MHPM6B15N120 ON1942
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| OCR Text |
...lated gate bipolar transistors (IGBT) matched with fast soft free-wheeling diodes to give optimum performance. The top connector pins are de...die (TC = 95C)
PD
W
Diode Power Dissipation per die (TC = 95C)
PD
W
(1) 1.0 ms = 1... |
| Description |
10, 15, 25 A, 1200 V HYBRID POWER MODULES
From old datasheet system
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| File Size |
265.21K /
10 Page |
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it Online |
Download Datasheet |
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ON Semi
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| Part No. |
MHPM7B12A120A_D ON1960
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| OCR Text |
...lated gate bipolar transistors (IGBT) matched with free-wheeling diodes to give optimal dynamic performance. It has been configured for use ...die (TC = 95C) Free-Wheeling Diode Power Dissipation per die (TC = 95C) Junction Temperature Range S... |
| Description |
12 AMP, 1200 VOLT HYBRID POWER MODULE
From old datasheet system
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| File Size |
232.86K /
10 Page |
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it Online |
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Mitsubishi
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| Part No. |
CM600HA-24H
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| OCR Text |
IGBT MODULES
CM600HA-24H
HIGH POWER SWITCHING USE INSULATED TYPE
A C Y - THD (2 TYP.) M
E
E
C
P D E U
G
B R
T
V...diE/dt = -1200A/s IE = 600A, diE/dt = -1200A/s VCC = 600V, IC = 600A, VGE1 = VGE2 = 15V, RG = 2.1 VG... |
| Description |
TRANSISTOR,IGBT POWER MODULE,INDEPENDENT,1.2KV V(BR)CES,600A I(C)
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| File Size |
46.96K /
4 Page |
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it Online |
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INFINEON
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| Part No. |
SIGC12T120
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| OCR Text |
IGBT Chip
FEATURES: * 1200V Trench & Field Stop technology * low turn-off losses * short tail current * positive temperature coefficient * ...Die Size 3.54 x 3.5 mm2
Package sawn on foil
Ordering Code Q67050A4102-A001
MECHANICAL PARA... |
| Description |
IGBT Chip
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| File Size |
79.79K /
5 Page |
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MAXIM
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| Part No. |
MAX4909
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| OCR Text |
...gate bipolar transistor (CSTBT) IGBT technology. The new ASeries family, which replaces Powerex's KA-Series in the range of 75 A to 400 A, o...Die are also available in various chip packaging media. International Rectifier El Segundo, Calif. w... |
| Description |
Dual 3:1 Clickless Audio Multiplexers with Negative-Signal Handling
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| File Size |
3,201.15K /
4 Page |
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it Online |
Download Datasheet |
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Price and Availability
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