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Samsung Electronic
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| Part No. |
M366S0823FTS
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| OCR Text |
...S, WE active. Makes data output Hi-Z, tSHZ after the clock and masks the output. Blocks data input when DQM active. (Byte masking) Data inpu...SPD memory device Fundamental memory type # of row address on this assembly # of column address on t... |
| Description |
8Mx64 SDRAM DIMM based on 8Mx8, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD Data Sheet
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| File Size |
160.98K /
11 Page |
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it Online |
Download Datasheet
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Samsung Electronic
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| Part No. |
M374S1623ETS
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| OCR Text |
...t/output mask makes data output hi-z, t shz after the clock and masks the output. blocks data input when dqm active. (byte masking) dq0 ~ 6...spd memory device 256bytes (2k-bit) 08h 2 fundamental memory type sdram 04h 3 # of row address on th... |
| Description |
16Mx72 SDRAM DIMM with ECC based on 8Mx8, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD Data sheet
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| File Size |
162.53K /
11 Page |
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it Online |
Download Datasheet |
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Samsung Electronic
SAMSUNG[Samsung semiconductor]
SAMSUNG SEMICONDUCTOR CO. LTD.
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| Part No. |
KMM366S403CTL-G0 KMM366S403CTL
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| OCR Text |
...S, WE active. Makes data output Hi-Z, tSHZ after the clock and masks the output. Blocks data input when DQM active. (Byte masking) Data inputs/outputs are multiplexed on the same pins. Power and ground for the input buffers and the core log... |
| Description |
PC66 SDRAM MODULE
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| File Size |
161.87K /
11 Page |
View
it Online |
Download Datasheet |
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SAMSUNG[Samsung semiconductor]
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| Part No. |
M366S1623DT0-C75
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| OCR Text |
...S, WE active. Makes data output Hi-Z, tSHZ after the clock and masks the output. Blocks data input when DQM active. (Byte masking) Data inputs/outputs are multiplexed on the same pins. WP pin is connected to VSS through 47K Resistor. When W... |
| Description |
PC133 Unbuffered DIMM
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| File Size |
153.13K /
10 Page |
View
it Online |
Download Datasheet |
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SAMSUNG[Samsung semiconductor]
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| Part No. |
M366S1623DT0-C7A
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| OCR Text |
...S, WE active. Makes data output Hi-Z, tSHZ after the clock and masks the output. Blocks data input when DQM active. (Byte masking) Data inputs/outputs are multiplexed on the same pins. WP pin is connected to VSS through 47K Resistor. When W... |
| Description |
PC133 Unbuffered DIMM
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| File Size |
153.07K /
10 Page |
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it Online |
Download Datasheet |
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SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
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| Part No. |
M366S1623DT0-C80 M366S1623DT0 M366S1623DT0-C1H M366S1623DT0-C1L
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| OCR Text |
...S, WE active. Makes data output Hi-Z, tSHZ after the clock and masks the output. Blocks data input when DQM active. (Byte masking) Data inputs/outputs are multiplexed on the same pins. WP pin is connected to VSS through 47K Resistor. When W... |
| Description |
PC100 Unbuffered DIMM
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| File Size |
135.45K /
9 Page |
View
it Online |
Download Datasheet |
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Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
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| Part No. |
M366S1723DTS-L7C M366S1723DTS M366S1723DTS-C M366S1723DTS-L1H M366S1723DTS-L1L M366S1723DTS-L7A
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| OCR Text |
...S, WE active. Makes data output Hi-Z, tSHZ after the clock and masks the output. Blocks data input when DQM active. (Byte masking) Data inpu...SPD 1.2B ver. base)
Organization : 16Mx64 Composition : 16Mx8 *8 Used component part # : K4S280832D... |
| Description |
PC133/PC100 Unbuffered DIMM PC133/PC100无缓冲DIMM
16Mx64 SDRAM DIMM based on 16Mx8, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD Data sheet
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| File Size |
145.03K /
11 Page |
View
it Online |
Download Datasheet |
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Price and Availability
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