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				International Rectifier
Part No.	IRf9410
OCR Text	...S = 2.0A, VGS = 0V TJ = 25C, I f = 2.0A di/dt = 100A/s D S Notes: Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 11 ) ISD 4.6A, di/dt 120A/s, VDD V(BR)DSS, TJ 150C Starting TJ = ...
Description	Power MOSfET(Vdss=30V, Rds(on)=0.030ohm)
File Size	103.18K / 7 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRf9520NL IRf9520NS
OCR Text	...Source Voltage (V) VGS = 0V, f = 1MHz Ciss = Cgs + Cgd , Cds SHORTED Crss = Cgd Coss = Cds + Cgd 20 ID = -4.0 A 16 VDS =-80V VDS =-50V VDS =-20V 600 C, Capacitance (pf) Ciss 12 400 Coss Crss 8 200 4...
Description	Power MOSfET(Vdss=-100V/ Rds(on)=0.48ohm/ Id=-6.8A) Power MOSfET(Vdss=-100V, Rds(on)=0.48ohm, Id=-6.8A) Power MOSfET(Vdss=-100V Rds(on)=0.48ohm Id=-6.8A)
File Size	151.66K / 10 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRf9520N
OCR Text	...Source Voltage (V) VGS = 0V, f = 1MHz Ciss = Cgs + Cgd , Cds SHORTED Crss = Cgd Coss = Cds + Cgd 20 ID = -4.0 A 16 VDS =-80V VDS =-50V VDS =-20V C, Capacitance (pf) 600 Ciss 12 400 Coss Crss 8 200 4...
Description	Power MOSfET(Vdss=-100V Rds(on)=0.48ohm Id=-6.8A) Power MOSfET(Vdss=-100V, Rds(on)=0.48ohm, Id=-6.8A)
File Size	91.94K / 8 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRf9530NL IRf9530NS IRf9530NSTRR
OCR Text	... rs s C o ss = = = = 0V , f = 1MHz C g s + C g d , C d s S H O R TE D C gd C ds + C g d 20 ID = -8.4A VDS = -80V VDS = -50V VDS = -20V C , Capacitance (pf) 15 1200 C iss 10 800 C oss C rss 5 400 ...
Description	Power MOSfET(Vdss=-100V/ Rds(on)=0.20ohm/ Id=-14A) Power MOSfET(Vdss=-100V, Rds(on)=0.20ohm, Id=-14A)
File Size	169.24K / 10 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRf9530N
OCR Text	... 0V --- 130 190 ns TJ = 25C, I f = -8.4A --- 650 970 nC di/dt = -100A/s Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 11 ) ISD...
Description	Power MOSfET(Vdss=-100V, Rds(on)=0.20ohm, Id=-14A)
File Size	109.25K / 8 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRf9540NL IRf9540NS IRf9540NSTRL
OCR Text	... rs s C o ss = = = = 0V , f = 1M H z C g s + C g d , Cd s S H O R T E D C gd C d s + C gd I D = -1 1A V D S = -80 V V D S = -50 V V D S = -20 V 16 C , Capacitanc e (pf ) 2000 C iss 12 1500 C oss 1000 8 C...
Description	Power MOSfET(Vdss=-100V/ Rds(on)=0.117ohm/ Id=-23A) Power MOSfET(Vdss=-100V, Rds(on)=0.117ohm, Id=-23A)
File Size	183.18K / 10 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRf9540N IRf9540 IRf9540NPBf
OCR Text	... rs s C o ss = = = = 0V , f = 1M H z C g s + C g d , Cd s S H O R T E D C gd C d s + C gd 20 I D = -1 1A V D S = -80 V V D S = -50 V V D S = -20 V 16 C , Capacitance (pf) 2000 C iss 12 1500 C oss 1000 8 ...
Description	-100V Single P-Channel HEXfET Power MOSfET in a TO-220AB package Power MOSfET(Vdss=-100V, Rds(on)=0.117ohm, Id=-23A) Power MOSfET(Vdss=-100V/ Rds(on)=0.117ohm/ Id=-23A)
File Size	121.23K / 8 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRf9952
OCR Text	...S2 G2 N -C H A N N E L M O S f E T 1 8 N-Ch P-Ch VDSS 30V -30V 2 7 3 6 4 5 P -C H A N N E L M O S f E T RDS(on...fast switching speed and ruggedized device design that HEXfET Power MOSfETs are well known for, prov...
Description	Power MOSfET(Vdss= -30V)
File Size	128.20K / 10 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRf9953
OCR Text	... rs s C os s = = = = 0V , f = 1MH z C gs + C g d , Cds S H OR TED Cgd C ds + C gd 20 ID = -2.3A VDS =-10V 16 C , C a p a c ita n c e (p f ) 300 C iss C os s 200 12 8 100 C rs s 4 0 1 10 100 A ...
Description	Power MOSfET(Vdss=-30V, Rds(on)=0.25ohm)
File Size	98.36K / 7 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRf9956
OCR Text	... = 1.25A, VGS = 0V TJ = 25C, I f = 1.25A di/dt = 100A/s D S Notes: Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 11 ) ISD 2.0A, di/dt 100A/s, VDD V(BR)DSS, TJ 150C Starting TJ =...
Description	Power MOSfET(Vdss=30V, Rds(on)=0.10ohm)
File Size	98.88K / 7 Page	View it Online	Download Datasheet

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