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04DGK 1500SBT V844ME N33T1G BL8092 01VXC 04DGK DDZX16TS
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    IRF7534D1 IRF7534D1TR

IRF[International Rectifier]
Part No. IRF7534D1 IRF7534D1TR
OCR Text ...rocessing techniques to achieve extremely low on-resistance per silicon area. Combining this technology with International Rectifier's low forward drop Schottky rectifiers results in an extremely efficient device suitable for use in a wide ...
Description -20V FETKY - MOSFET and Schottky Diode in a Micro 8 package
FETKY MOSFET & Schottky Diode(Vdss=-20V, Rds(on)=0.055ohm, Schottky Vf=0.39V)
Co-packaged HEXFET Power MOSFET and Schottky Diode(同封HEXFET晶体管和肖特基二极管)

File Size 104.46K  /  8 Page

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    MB86296 MB86296S

Fujitsu Media Devices Limited
Part No. MB86296 MB86296S
OCR Text ... life or limb and which require extremely high reliability must contact our Sales Department first. If damage is caused by such use of our semiconductor devices without first consulting our Sales Department, Fujitsu will not assume any resp...
Description PCI Graphics Controller Specification

File Size 3,500.39K  /  352 Page

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    BR2325 CR1616 CR1612 CR3032 CR2477 CR2412 CR2450 BR3032 BR1220 BR2032 BR2330

Panasonic Semiconductor
Part No. BR2325 CR1616 CR1612 CR3032 CR2477 CR2412 CR2450 BR3032 BR1220 BR2032 BR2330
OCR Text ...t of conventional dry batteries extremely small self-discharge for long service and shelf life a wide operational temperature range compact and lightweight; extremely high energy density per unit weight very safe (poly-carbonmonofluoride li...
Description INDUSTRIAL SOLUTIONS

File Size 80.68K  /  4 Page

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    IRLML6302PBF

International Rectifier
Part No. IRLML6302PBF
OCR Text ...rocessing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extr...
Description HEXFET Power MOSFET

File Size 635.05K  /  8 Page

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    CZTA96

CENTRAL[Central Semiconductor Corp]
Part No. CZTA96
OCR Text extremely HIGH VOLTAGE TRANSISTOR Central DESCRIPTION: TM Semiconductor Corp. The CENTRAL SEMICONDUCTOR CZTA96 type is a surface mount epoxy molded PNP silicon planar epitaxial transistors designed for extremely high voltage ap...
Description SURFACE MOUNT PNP SILICON extremely HIGH VOLTAGE TRANSISTOR
SURFACE MOUNT PNP SILICON extremely HIGH VOLTAGE TRANSISTOR

File Size 106.38K  /  2 Page

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    GM66102-1.5TB3T GM66102-1.5TC3R GM66102-1.8TB3T GM66102-12ST3T GM66102-5.0TC3T GM66102 GM66102-1.5ST3R GM66102-1.5ST3T G

GAMMA[Gamma Microelectronics Inc.]
Part No. GM66102-1.5TB3T GM66102-1.5TC3R GM66102-1.8TB3T GM66102-12ST3T GM66102-5.0TC3T GM66102 GM66102-1.5ST3R GM66102-1.5ST3T GM66102-1.5TA3R GM66102-1.5TA3T GM66102-1.5TC3T GM66102-1.8ST3R GM66102-1.8ST3T GM66102-1.8TA3R GM66102-1.8TA3T GM66102-1.8TC3R GM66102-1.8TC3T GM66102-12ST3R GM66102-12TA3R GM66102-12TA3T GM66102-12TB3T GM66102-12TC3R GM66102-12TC3T GM66102-2.5ST3R GM66102-2.5ST3T GM66102-2.5TA3R GM66102-2.5TA3T GM66102-2.5TB3T GM66102-2.5TC3R GM66102-2.5TC3T GM66102-3.0ST3T GM66102-3.0TA3R GM66102-3.0TA3T GM66102-3.0TB3T GM66102-3.0TC3R GM66102-3.0TC3T GM66102-3.3ST3R GM66102-3.3ST3T GM66102-3.3TA3R GM66102-3.3TA3T GM66102-3.3TB3T GM66102-3.3TC3R GM66102-3.3TC3T GM66102-5.0ST3T GM66102-5.0TA3R GM66102-5.0TA3T GM66102-5.0TB3T GM66102-5.0TC3R GM66102-3.0ST3R GM66102-5.0ST3R
OCR Text ...igh current, high accuracy, and extremely low dropout voltage performance. These regulators feature 300 to 350mV (full load) dropout voltages and very low ground current. Although designed for high current, and loads, these devices are also...
Description 1A ULTRA LOW-DROPOUT VOLTAGE REGULATORS

File Size 301.88K  /  11 Page

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