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  diode-diode Datasheet PDF File

For diode-diode Found Datasheets File :: 135805    Search Time::3.422ms    
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    SQ2328ES-T1-GE3

Vishay Siliconix
Part No. SQ2328ES-T1-GE3
OCR Text ...1.2 continuous source curr ent (diode conduction) i s 3.7 pulsed drain current a i dm 8 single pulse avalanche current l = 0.1 mh i as 5 single pulse avalanche energy e as 1.3 mj maximum power dissipation a t c = 25 c p d 3 w t c = 1...
Description SQ2328ES Automotive N-Channel 100 V (D-S) 175 &#176;C MOSFET

File Size 223.16K  /  10 Page

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    HBAT54C HBAT54S HBAT54A HBAT54

Hi-Sincerity Microelectronics
HSMC[Hi-Sincerity Mocroelectronics]
Hi-Sincerity Mocroelect...
Part No. HBAT54C HBAT54S HBAT54A HBAT54
OCR Text ... : 2002.10.24 Page No. : 2/3 Diode Capacitance & Reverse-Biased Voltage 100 200 150 Diode Capacitance-Cd (pF) 0 200 400 600 800 1000 Forward Current-IF (mA) 10 100 50 0 1 0.1 1 10 100 Forward Voltage-VF (m...
Description Silicon Schottky Barrier Double Diodes

File Size 22.64K  /  3 Page

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    HD74HCU04 HD74HCU04A

HITACHI[Hitachi Semiconductor]
Part No. HD74HCU04 HD74HCU04A
OCR Text ...* Input terminal has protection diode Function Table Input A H L H : High level L : Low level Output Y L H HD74HCU04A Pin Arrangement 1A 1 1Y 2A 2 3 14 VCC 13 6A 12 6Y 11 5A 10 5Y 9 4A 8 4Y 2Y 4 3A 3Y 5 6 GND 7 (Top v...
Description Hex Inverters

File Size 40.80K  /  9 Page

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    J111-18

VISHAY SILICONIX
Part No. J111-18
OCR Text ...20 a continuous source current (diode conduction) a, b i s 1.7 maximum power dissipation a, b t a = 25 c p d 2.5 w maximum power dissipation a, b t a = 70 c p d 1.6 w operating junction and storage temperature range t j , t stg ...
Description N-CHANNEL, Si, SMALL SIGNAL, JFET, TO-226AA

File Size 64.13K  /  5 Page

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    SQ2348ES

Vishay Siliconix
Part No. SQ2348ES
OCR Text ...5.3 continuous source curr ent (diode conduction) i s 3.8 pulsed drain current a i dm 32 single pulse avalanche current l = 0.1 mh i as 15.5 single pulse avalanche energy e as 12 mj maximum power dissipation a t c = 25 c p d 3 w t c ...
Description Automotive N-Channel 30 V (D-S) 175 °C MOSFET

File Size 111.42K  /  7 Page

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    SQ2319ES

Vishay Siliconix
Part No. SQ2319ES
OCR Text ...2.6 continuous source curr ent (diode conduction) i s - 3.7 pulsed drain current a i dm - 18 single pulse avalanche current l = 0.1 mh i as - 12 single pulse avalanche energy e as 7.2 mj maximum power dissipation a t c = 25 c p d 3 w ...
Description Automotive P-Channel 40 V (D-S) 175 C MOSFET

File Size 221.93K  /  10 Page

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    RJF0604DPD RJF0604DPD-00-J3

Renesas Electronics Corporation
Part No. RJF0604DPD RJF0604DPD-00-J3
OCR Text ...t i d note3 5 a body-drain diode reverse drain current i dr 5 a avalanche current i ap note 2 4.7 a avalanche energy e ar note 2 94.7 mj channel dissipation pch note 1 30 w channel temperature tch 150 ?c storage...
Description Silicon N Channel MOS FET Series Power Switching

File Size 83.69K  /  8 Page

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    IRF1010EL IRF1010ES IRF1010ESTRL IRF1010ESTRR

IRF[International Rectifier]
Part No. IRF1010EL IRF1010ES IRF1010ESTRL IRF1010ESTRR
OCR Text ...epetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 srew Max. 84 59 330 200 1.4 20 50 17 4.0 -55 to + 175 300 (1.6mm f...
Description 60V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
60V Single N-Channel HEXFET Power MOSFET in a TO-262 package
Power MOSFET(Vdss=60V/ Rds(on)=12mohm/ Id=84A)
Power MOSFET(Vdss=60V, Rds(on)=12mohm, Id=84A)
Power MOSFET(Vdss=60V, Rds(on)=12mohm, Id=84A?)
Power MOSFET(Vdss=60V, Rds(on)=12mohm, Id=84A?

File Size 122.02K  /  10 Page

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    IRF1010E

International Rectifier
Part No. IRF1010E
OCR Text ...epetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 srew Max. 84 59 330 200 1.4 20 50 17 4.0 -55 to + 175 300 (1.6mm f...
Description Power MOSFET(Vdss=60V,Rds(on)=12mohm,Id=84A?

File Size 143.91K  /  8 Page

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    IRF1010NL IRF1010NS IRF1010NSTRR IRF1010NSPBF IRF1010NSTRL IRF1010NLPBF

IRF[International Rectifier]
Part No. IRF1010NL IRF1010NS IRF1010NSTRR IRF1010NSPBF IRF1010NSTRL IRF1010NLPBF
OCR Text ...epetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 srew Max. 85 60 290 180 1.2 20 43 18 3.6 -55 to + 175 300 (1.6mm f...
Description 55V Single N-Channel HEXFET Power MOSFET in a TO-262 package
55V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
Power MOSFET(Vdss = 55 V/ Rds(on)=11mohm/ Id=85A)
Power MOSFET(Vdss = 55 V, Rds(on)=11mohm, Id=85A)
Power MOSFET(Vdss = 55 V, Rds(on)=11mohm, Id=85A?)
Power MOSFET(Vdss = 55 V, Rds(on)=11mohm, Id=85A?

File Size 144.82K  /  10 Page

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For diode-diode Found Datasheets File :: 135805    Search Time::3.422ms    
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