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  d-950-10 Datasheet PDF File

For d-950-10 Found Datasheets File :: 10601    Search Time::1.422ms    
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    VISHAY SEMICONDUCTORS
Part No. TSOP35130 TSOP35330
OCR Text ... 0 , t = 10 ms) output signal t d 1) 1) 3/f 0 < t d < 9/f 0 2) t pi - 4/f 0 < t po < t pi + 6/f 0 *) t pi 6/f 0 is recommende...950 nm, optical test signal, fig. 1 output pulse width input burst length document number: 8178...
Description LINEAR OUTPUT PHOTO DETECTOR

File Size 329.28K  /  12 Page

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    HT23B60 HT23B60-100QFP-A

HOLTEK[Holtek Semiconductor Inc]
Part No. HT23B60 HT23B60-100QFP-A
OCR Text ...circuit * Build-in a 8-bit PWM D/A hardware circuit * 100-pin QFP package General Description HT23B60 is an 8-bit CMOS microcontroller ...950 324.950 214.350 114.350 3.750 -96.250 -206.850 -306.850 -417.450 -517.450 -628.050 -729.826 -863...
Description From old datasheet system
60x11 Pixel Data Bank 8-Bit Mask MCU

File Size 305.75K  /  50 Page

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    60EPS08PBF 60EPS12PBF

Vishay Siliconix
Part No. 60EPS08PBF 60EPS12PBF
OCR Text ...n optimized for very low forwar d voltage drop, with moderate leakage. the glass passivation technology used has reliable operation up to 15...950 a t j max. 150 c diode variation single die base common cathode 2 13 anode 2 cathode 1 to-247ac...
Description High Voltage Input Rectifier Diode, 60 A

File Size 160.30K  /  7 Page

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    TSUS5400 TSUS540009 TSUS5401 TSUS5402

Vishay Siliconix
Part No. TSUS5400 TSUS540009 TSUS5401 TSUS5402
OCR Text ... 400 ns virtual source diameter d 2.9 mm type dedicated characteristics parameter test condition part symbol min. typ. max. unit forward vol...950 nm, gaas vishay semiconductors basic characteristics t amb = 25 c, unless otherwise specifie...
Description Infrared Emitting Diode, 950 nm, GaAs

File Size 107.99K  /  5 Page

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    TSUS520009 TSUS5201 TSUS5202

Vishay Siliconix
Part No. TSUS520009 TSUS5201 TSUS5202
OCR Text ... 400 ns virtual source diameter d 3.8 mm document number: 81055 for technical questions, contact: emittertechsupport@vishay.com www.vi...950 nm, gaas vishay semiconductors note t amb = 25 c, unless otherwise specified basic character...
Description Infrared Emitting Diode, 950 nm, GaAs
   Infrared Emitting Diode, 950 nm, GaAs

File Size 107.67K  /  5 Page

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